金屬線與材料層間的介電性質嚴重影響半導體元件的實際應用， 隨著元件尺寸的縮小，元件速度主要受限於訊號在金屬連線間的時間延遲，為了改善此問題，低介電材料的導入成為必要的選擇。類鑽碳膜 ( DLC ) 為一類似鑽石結構的非晶質碳膜，具有高硬度、低磨擦係數、抗化學腐蝕、高熱傳導性，高電阻及紅外線穿透等特性。因此，可以應用於機械、光電、半導體產業與電子元件等。

　　DLC在光電方面亦具有優越的特性；例如DLC的介電常數約2.7~2.8之間 (SiO2 =4.0、 Si3N4=8、Si=11.9、鑽石=5.6)，藉著化學氣相沉積製程中氯離子的加入 ( doping ) 而形成含氯的纇鑽碳膜 ( Cl-DLC )，其介電常數將可以調整至2.8，此低介電常數可以成為VLSI後段製程中的鈍化層。有鑑於此，本計畫將以PECVD方式沉積類鑽碳膜，再以離子植入方式將高劑量的非金屬離子 ( Ar、N 、C )植入表層，主要目的在探討非金屬離子對類鑽碳膜之結構及介電常數之影響。

　　研究結果顯示，Ar、N元素的植入會使得類鑽碳膜有偏石墨化的現象，介電常數會比未植入前來的高；但C元素的植入可以使得介電常數有下降的趨勢，其原本類鑽碳膜的成分會有較多的SP3結構。

　　The application of the semiconductor devices were seriously effected by the dielectric property between coating layers and the metal-conduct-line. Interconnect delay is a factor of performance limiting for ULSI circuits when feature size is scaled to deep sub-micron region. Using low dielectric constant materials for the interlayer insulator is an effective way to solve the RC time delay. Diamond-like carbon ( DLC ) film is an amorphous film with many properties such as high hardness, low friction coefficient , high thermal conductivity, high electric resistance and high infrared transparency, etc. Therefore, DLC can be applied to mechanics, optical industry and semi-conductor components.

　　DLC have been the subject of research for the last two decades due to their important electrical and mechanical properties. Such as its dielectric constant is 2.7~3.8 ( SiO2 =4.0, Si3N4=8, Si=11.9, Diamond=5.6 ), by doping Cl ions to form the Cl-containing diamond like carbon ( CLDLC ) during the chemical vapor deposited process. The dielectric constant can be reduced to under 2.8. This low-k material can be used as the passive layer in the VSLI process. This study will deposit the DLC film by the PECVD method. And using the ion implanting with high dosage of ion ( Ar, N and C ) to modify the surface of the DLC film. The aim of this plan is to investigate the effects of those ions implantation on the structure and dielectric constant of the DLC film.

　　The results reveal that the implanted with Ar or N leads to graphitization, and have higher dielectric constant. With C element implanted, the dielectric constant have been reduced and it have more SP3 structure.

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