本研究利用電化學的方式來成長太陽能電池的主吸收層二硒化銅銦(CuInSe2,CIS)，電化學的優點在製程簡單、成本低且適合大面積生產，缺點為薄膜組成難控制和均勻性問題。電鍍可分為直流電鍍和脈衝電鍍兩種，脈衝電鍍的成核較直流電鍍慢，所鍍出來的薄膜較緻密且平整。在電解液添加錯合劑十二烷基硫酸鈉(sodium dodecyl sulfate ，SDS)利用循環伏安法可以觀察到銦的還原電位往正的方向偏移可提高薄膜的銦含量，且SDS可增加薄膜的平整度與附著性。採用脈衝電鍍去成長CuInSe2利用SEM、EDS分別去分析薄膜的表面形貌與成分比例、拉曼光譜分析有無二次相產生、XRD分析薄膜的結構與晶粒大小。
作為一個良好的薄膜太陽能電池吸收層理想厚度約為1μm。吾人調變脈衝參數為Von 、Voff電壓、duty cycle Θ(Θ=t_on/(t_on+t_off ) x100%)與錯合劑SDS濃度。綜合起來得到最佳CuInSe2條件，經由硒化後，將硫化鎘沉積於CuInSe2上，藉由IV curve去探討元件特性。

In this study, the CuInSe2 thin films were fabricated by electrodeposition. Advantages of electrodeposition are low equipment cost , high deposition rate, negligible waste of chemicals and possibility to deposit over large area. The disadvantages of the film composition are difficult to control and keep uniformity.
The electrodeposition of CuInSe2 thin film can be divided into DC electrodeposition and pulse electrodeposition. According to the nucleation rate of pulse electrodeposition is slower than DC electrodeposition, the CuInSe2 thin film fabricated by pulse electrodeposition is dense and smooth. When we add Sodium dodecyl sulfate (SDS) additive into electrolyte, the reduction potential of indium could shift to positive potential by cyclic voltammograms measurement. This result indicate that the indium content is increased by reacting with SDS to form complex compound. SDS additive also could increase the adhesion and uniform of CuInSe2 thin film.
The surface morphologies and chemical compositions of the electrodeposited CIS thin film were observed by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). The qualities 、crystalline properties and second phase of the electrodeposited CIS thin film were analysed by X-ray diffraction (XRD) and Roman spectroscopy, respectively.
The idea thickness of absorb layer of thin film solar cell is approximate to 1um. In this study, the optimal CIS thin film is attained by adjusting experiment parameters such as duty cycle, Von and Voff of pulse electrodeposition, and the concentration of SDS additive. Finally, the optimal CIS thin film is selenization by furnace in vacuum and subsequently the CdS is deposited on CIS thin film by CBD method. The properties of CIS thin film solar cell is studied by I-V curve.

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