近期，許多研究學者致力於二維材料及奈米材料上的光譜研究，藉由材料的光致螢光光譜(PL)和拉曼光譜(Raman Spectroscopy)來分析其相關的光學特性及運用層面。舉例來講，陽極氧化鋁(AAO)的表面電漿子傳輸機制、二硫化鉬(MoS2)材料的內層應力與能帶結構關係，及其偏振模態特性等，但較少探討AAO樣品上的雷射退火效應及二硫化鉬(MoS2)電晶體的閘極電性量測。
因此，本篇論文的研究重點將著眼於兩個領域，前半段實驗在於觀察AAO樣品在不同的雷射功率退火下的PL光譜變化性，並針對其光譜強度、特徵峰位置及線寬作分析歸因。由退火實驗得知，隨著雷射功率加大，AAO中的陰離子因為熱解效應而顯得稀少，導致鋁離子Al^(3+)較少機會與陰離子化合成氧化鋁Al2O3。
後半段實驗則是觀察當施予MoS2元件不同的閘極電壓，其產生的拉曼光譜差異性。隨著外加的閘極電壓不斷提昇，發現A1g模態的線寬也跟著擴大，可能是因為電子與聲子的耦合效應變強所致。調變閘極頻率從0
MHz到5 MHz，拉曼光譜強度緩慢增加，爾後調高至20 MHz，強度就呈現下降趨勢。

Researchers have examined recent developments in research on optical features of Raman spectra and Photoluminescence (PL) spectra among several two-dimensional materials and nanomaterials. Such research could be applied to realize surface plasmon transport in AAO film. Others have focused on strain-induced electronic structure change, polarization-dependent studies on Molybdenum disulfide (MoS2). Laser annealing on AAO film and electric properties of MoS2 transistor with gate voltage were relatively unexplored.
Thus, the paper studied the evolution of PL spectra as a function of laser annealing power on AAO film and the Raman profiles with different top gate voltage on MoS2 transistor, especially for direct-current (DC) and alternating-current (AC) applied gate voltage. The findings of PL spectra and Raman spectra were categorized and quantified in order to ascertain the optical mechanisms of the samples under distinct external field effects.
The results revealed that the annealed AAO film with less anion impurity content due to the pyrolysis, resulting in weaker attraction of Al^(3+) to form Al2O3, as a function of annealing power. The broadening of linewidth for A1g mode was a result of strengthening of electron-phonon coupling with increased gate voltage (Vg). Peak intensity increased slightly with AC gate frequency, from 0 MHz to 5 MHz, and decreased to 20 MHz.

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