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研究生: 傅冠倫
Fu, Kuan-Lun
論文名稱: 電阻式記憶體與垂直式耦合環形共振器於元件結構上整合之可行性分析
Investigating the Plausibility of Integrating the Resistive Random-Access Memory (ReRAM) with Vertically-Coupled Microdisk Resonator (VCMR)
指導教授: 莊文魁
Chuang, Wen-Kuei
學位類別: 碩士
Master
系所名稱: 電機資訊學院 - 微電子工程研究所
Institute of Microelectronics
論文出版年: 2019
畢業學年度: 107
語文別: 中文
論文頁數: 129
中文關鍵詞: 光子積體電路電阻式記憶體垂直式耦合環形共振器光學式記憶體
外文關鍵詞: Photonic Integrated Circuits (PIC), Resistive Random-Access Memory (ReRAM), Vertically-Coupled Microdisk Resonator (VCMR), Optical memory
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  • 光子積體電路(photonic integrated circuits,PIC)之整合技術大多僅限於以光路取代傳統電路,而光訊號在傳輸至電子元件前,仍須轉變為電訊號才能進行運算,若想藉由光訊號取代電訊號進行運算,必須先從元件最基本之儲存媒介,即光學式記憶體(optical memory)開始研究。
    本論文將藉由電阻記憶體與垂直式環形耦合共振器之整合,開發具有電寫入、光讀取功能之新型光學式記憶體,並做可行性分析。由於電阻式記憶體(ReRAM)具有體積小、低功耗、讀寫速度快等優點,同時元件結構亦是現存記憶體當中最簡單之架構,故相當適合與其他元件做結構上的整合。環形共振器(microdisk resonator)則是因擁有波長選擇特性,且元件製程技術成熟,而成為光子積體電路不可或缺的元件之一。
    本論文在研究的過程中共製作了兩個元件,首先是對平行耦合雙圓環共振器進行元件製作,並利用可調變式雷射光源(tunable laser)和極化控制器(polarization controller),以邊射型耦合(end-fire coupling)的方法將光波耦合至元件中,使得光波於共振條件下被篩選,進而在輸出端之光學頻譜分析儀(OSA)中得到相對應的傳輸頻譜,對元件之光學特性做探討;其次是設計電阻記憶體與垂直式耦合環形共振器(VCMR)之整合元件,此元件承襲環形共振器的光學特性,但改以垂直方式耦合光波,並與電阻式記憶體整合於單一元件上,進而探討元件的光波長選擇、記憶儲存、光物質交互作用等特性,對此元件是否能成為新型光學式記憶體做可行性分析。

    The integration technology of photonic integrated circuits (PIC) is mostly limited to replacing traditional circuits with optical equivalents. When the optical signal is transmitted to the electronic component, it must be converted first into an electronic signal before the subsequent operation can be implemented. Before this optical-to-electrical conversion actually takes place, it is important to realize that the success of manipulating and processing the optical signal would inevitably require the help of optical memory devices to store the relevant optical data involved.
    In this paper, the plausibility of developing a new type of optical memory with electrical writing and optical reading functions which is constructed by integrating the resistive memory with the vertically-coupled microdisk resonator is duly investigated. Resistive random-access memory (ReRAM) typically has several advantages which include small size, low power consumption, and fast read/write speed. From the structural viewpoint, the component involves the simplest architecture as compared to other existing memory counterparts. Therefore, this simplicity is unique for ReRAM to be viably integrated with other optical components including the microdisk resonator, which is one of the indispensable building blocks of the photonic integrated circuit due to its wavelength selective characteristics and mature component processing technology.
    In the course of the research, two device components are fabricated. First, the parallel-coupled double ring resonator is realized. The light wave coming from a tunable laser with a proper polarization control is fed into the waveguide component by the end-fire coupling so that the light wave is selectively filtered under the resonance condition. The corresponding transmission spectrum is obtained from the optical spectrum analyzer (OSA) at the output, and the optical characteristics of the components evaluated are discussed. The second component constructed is a ReRAM-based microdisk resonator which has dual functionality of memory and optical spectral filtering capabilities. Furthermore, the characteristics of selective light wave filtering, memory storage, and the interaction of light with are discussed, in order to assess the applicability of using this dual-function device as a new optical memory in the future.

    中文摘要 I 英文摘要 III 誌謝 XX 目錄 XXII 表目錄 XXVI 圖目錄 XXVII 第一章 緒論 1 1.1光纖通訊簡介 1 1.2光子積體電路 4 1.3光學式記憶體 6 1.4研究動機與目的 7 1.5論文架構 9 第二章 鈮酸鋰垂直式耦合環形共振器(VCMR) 10 2.1鈮酸鋰晶體特性 10 2.2光波導製作 14 2.2.1金屬擴散法 16 2.2.2質子交換法 18 2.2.3熱退火質子交換法 24 2.2.4反質子交換法 27 2.2.5質子交換濕式蝕刻法 29 2.3光波導光學特性量測導論 30 2.3.1菱鏡耦合技術 31 2.3.2邊射耦合技術 33 2.4環形共振器設計 34 2.4.1串聯型雙圓環形共振器 39 2.4.2垂直式耦合環形共振器(VCMR) 42 2.4.3自由光譜區域 43 2.4.4品質因子 44 第三章 電阻式記憶體(ReRAM) 45 3.1電阻式記憶體(ReRAM)簡介 45 3.2電阻式記憶體切換現象 47 3.2.1電阻切換機制 48 3.2.2燈絲理論 48 3.2.3金屬電化學效應 50 3.2.4價電子轉變效應 51 3.3絕緣體漏電流傳導機制 53 3.3.1歐姆傳導 53 3.3.2空間電荷限制電流 54 3.3.3普爾-法蘭克發射 55 3.3.4蕭特基發射 56 3.3.5穿隧效應 57 第四章 元件設計與製作 60 4.1元件製程導論 60 4.1.1鈮酸鋰擴散型光波導之光學特性 61 4.1.2氧化銦錫透明導電膜之光學特性 64 4.2平行式耦合串聯型雙圓環形共振器設計 66 4.3平行式耦合串聯型雙圓環形共振器製作 68 4.4光學式記憶體元件設計 69 4.5光學式記憶體元件製作 72 4.5.1切割與清洗鈮酸鋰基板 79 4.5.2蒸鍍鈦金屬薄膜 81 4.5.3黃光微影定義阻擋層圖案 83 4.5.4蝕刻鈦金屬形成阻擋層 86 4.5.5質子交換光波導層 87 4.5.6黃光微影定義對準點 88 4.5.7蝕刻鈦金屬形成對準點 88 4.5.8濺鍍氧化銦錫薄膜形成底部電極 89 4.5.9黃光微影定義介電層圖案 91 4.5.10濺鍍氧化鎳薄膜 91 4.5.11剝離氧化鎳形成介電層 93 4.5.12黃光微影定義頂部電極圖案 95 4.5.13濺鍍氧化銦錫薄膜 95 4.5.14剝離氧化銦錫形成頂部電極 96 4.5.15試片側邊研磨拋光 97 第五章 元件量測與結果分析 100 5.1元件量測導論 100 5.2光場量測系統架構 100 5.3光電量測系統架構 102 5.4平行式耦合串聯型雙圓環形共振器量測結果與分析 103 5.5光學式記憶體元件量測結果與分析 106 第六章 結論與未來工作 117 6.1結論 117 6.2未來工作 120 參考文獻 122

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