本實驗使用高純度的氧化鋅靶材(99.99%)在室溫下利用離子束濺鍍系統在玻璃基板上沉積氧化鋅薄膜，透過改變離子束電壓(Vb)，離子束電流(Ib)以及在沉積時通入不同流量的氧氣，來觀察對樣品的微觀結構、組成成分，電性及光學特性上的影響。
　　接著，將氧化鋅薄膜應用在PLED 元件上當做陽極，PLED 元件結構組成分別是Ca/Al 作為陰極，PF 作為發光層，PEDOT:PSS 作為電洞傳輸層，氧化鋅(2000 )作為陽極，並研究其元件的光電表現特性，並與使用銦
錫氧化物(ITO)為陽極時的PLED 元件作一比較。
　　在本實驗中的最佳樣品為Vb=400 V，Ib=10 mA，在沒有通入氧氣當做反應氣體的條件下所成長出來的氧化鋅薄膜，厚度約為2000 ，電阻率為2×10-3 Ω-cm，載子濃度為2×1020 #/cm3，載子遷移率為15.1 cm2/V-s，可見光平均穿透率(Tav)為90%，而其在PLED元件的表現上，在偏壓為15V時可以得到最大亮度約為8000 cd/m2，而此時的發光效率為4 cd/A。

　　In our study,zinc oxide (ZnO) films were deposited on the glass substrates by ion beam sputtering system using high-purity of ZnO
(99.99%) target at room temperature.We investigated the influenceon the　structure,composition,electrical and optical properties of ZnO films by changing the ion beam voltage (Vb) ,ion beam current (Ib) and feeding different oxygeng as flow rates.
　　Then,ZnO films were used as anodes for polymer light emitting devices(PLED).We fabricated the PLED structure consisted of
Ca/Al as a cathode,PF as a luminously layer,PEDOT-PSS as a hole transporting layer and ZnO (2000) as an anode.The electroluminescence
performance of the devices were studied and compared to a control device with an indium tin oxide (ITO) anode.
　　The Best ZnO film with resistivity as low as 2×10-3 Ω-cm,carrier concentration of 2×1020 #/cm3,Mobility of 15.1 cm2/V-s and optical
transmittance 90% in the visible range was prepared at Vb=400 V and Ib=10 mA without feedind oxygen gas.The performance of PLED have
the brightness of 8000 cd/m2 and luminance efficiency of 4 cd/A at 15 V.

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