本實驗先利用射頻濺鍍方式在10mtorr的壓力下以不同濺鍍功率

(150W~210W)成長鋅薄膜，之後在大氣下以不同溫度退火(900°C

~1200°C)將鋅薄膜氧化成為氧化鋅薄膜。接著我們對這些樣品作光

激發螢光光譜(photoluminescence，PL)與掃描式電子顯微鏡

(scanning electron microscope，SEM)的分析，得知濺鍍功率在

150W及1000˚C退火時的樣品為最好。

此外，由此樣品之低溫PL可以得到Varshni equation中，受中性施

體束縛之束縛態激子之α、β分别為0.9 meV/K、680K；而施體到

受體之躍遷(donor state to acceptor state transition)之α、

β分別為0.9 meV/K、645K。

In this study, ZnO films grown by RF sputtering method are investigated by photoluminescence and scanning electron microscope. ZnO film arises from metal Zn sputtered on substrate at different sputtering sputtering power (150~210W) and then annealed at different temperature (900~1200℃) under 1 atm. We find that the high quality ZnO was obtained at sputtering power and annealing temperature is 150W and 1000℃ respectively. The ZnO grain size increased as the annealing temperature increased. The UV intensity decreased due to radiative defect increases as the annealing temperature is too high.

[1]　K.Hummer, Phys. Status Solidi B ,Vol.56, 249(1973)
[2]　S.Cho, J.Ma, Y.Kim, Y.Sun, G.K.L.Wong, and　J.B.Ketterson, “Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn”, Appl.Phys.Lett.Vol.75, No.18, 2761(1999)
[3]　K.K.Kim, J.H.Song, H.J Jung, S.J.Park, J.H.Song, J.Y.Lee, “Photoluminescence and heteroepitaxy of ZnO on sapphire substrate(0001) grown by rf magnetron sputtering”, J.Vac.Sci. A18(6), 2864 (2000)
[4]　Y.Zhang, G.Du, D.Liu, X.Wang, Y.Ma, J.Wang, J.Yin, X.Yang, X.Hou, S.Yang, “Crystal growth of undoped ZnO films on Si substrates under different sputtering conditions ”, J.Cryst.Grownth Vol.243, 439 (2002)
[5] M.Kawasaki, A.Ohtomo, H.Koinuma, Z.K.Tang, P.Yu, G.K.L.Wong, B.P.Zhang,and Y.Segawa, Mater.Sci.Eng., B 56,239 (1998)
[6]　J.Huand R.G Gordon, Sol.Cells Vol.30, 437 (1991)
[7]　Maria Losurdo and Maria M. Giangregorio “Interaction of atomic hydrogen with Zn-polar and O-polar ZnO surfaces”, Appl. Phys. Lett.Vol 86, 091901 (2005)
[8]　H. Nanto, T. Minami, and S. Takata, Phys. “Photoluminescence in sputtered ZnO thin films”Status Solidi A 65, K131 (1981).
[9]　J. Hu and R.G. Gordon “Textured aluminum-doped zinc oxide thin films from atmospheric pressure chemical-vapor deposition”J. Appl. Phys. 71 2 (1992), p. 880
[10]　Y. Chen, D. M. Bagnall, H. J. Koh, K. T. Park, K. Hiraga, Z. Zhu, and T. Yao “Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterization” J. Appl. Phys.Vol. 84, 3912 (1998).
[11]　S. Bethke, H. Pan, and B. W. Wesseis“Luminescence of heteroepitaxial zinc oxide” Appl. Phys. Lett. Vol.52, 138 (1988).
[12]　Yuantao Zhang, Guotong Du, Dali Liu, Xinqiang Wang, Yan Ma, Jinzhong Wang, Jingzhi Yin, Xiaotian Yang, Xiaoke Hou and Shuren Yang “Crystal growth of undoped ZnO films on Si substrates under different sputtering conditions” Volume 243, Issues 3-4 , September 2002, Pages 439-443
[13]　D.R.Vij, “Luminescence of Solids”Plenum Press, New York and London, ch3, p95
[14]　Kittel “Introduction to Solid State Physics”, John Wiley, Canada, p104
[15]　劉如熹、紀喨勝, “紫外光發光二極體用螢光粉介紹”,全華科技,(2003)
[16]　羅吉宗, “薄膜科技與應用”, 全華科技, 台北, p2-1
[17]　W.Lu andK.Komvopoulos, “Dependence of growth and nanomechanical properties of ultrathin amorphous carbon films on radio frequency sputtering conditions”, Vol.86, No.4, 2268 (1999)
[18]　Y.G.Wang, S.P.Lau, H.W.Lee, S.F.Yu, and B.K.Tay, “Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air”, J.Appl.phys. Vol.94, No.1, 354 (2003)
[19]　Tae-Bong Hur, Gwang Soo Jeen, Yoon-Hwae Hwang, and Hyung-Kook Kim “Photoluminescence of polycrystalline ZnO under different annealing conditions” J.App. Phys. Vol.94, Issue 9, p5787 (2003)
[20]　Y.P.Varshni, physica, Amsterdam, Vol.34, p149 (1967)