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研究生：	高銘聰 Kao, Ming-Tsong
論文名稱：	運用掃描探針顯微術於矽晶圓上生長氧化矽理論研究及實驗驗證 Fabrication of Nanoscale Oxide Patterns On Silicon Wafer Using Scanning Probe Microscope
指導教授：	林仁輝 Lin, Ren-Hui
學位類別：	碩士 Master
系所名稱：	工學院 - 機械工程學系 Department of Mechanical Engineering
論文出版年：	2002
畢業學年度：	90
語文別：	中文
論文頁數：	110
中文關鍵詞：	原子力顯微鏡微影
外文關鍵詞：	AFM-lithography
相關次數：	點閱：71 下載：4
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本論文主要是以電化學反應的觀點，探討使用原子力顯微鏡在矽晶圓上生長二氧化矽之行為及其形貌上的研究。目前國際間的研究並沒有很多理論模型來驗證生長的二氧化矽高度及寬度，隨著各個不同參數的改變所造成的變化。我們所提出的理論，可分成兩部分:一部份是由力學平衡的角度，來建構水橋的輪廓；令一部份則是由電化學反應中的離子濃度統御方程式，來分析矽晶圓表面氫氧離子即將與矽晶片反應前的濃度分佈，由濃度分佈的大小來分析所生長的二氧化矽半高寬(FWHM)。

針對所提出的理論是在穩態下建立的模式，因此在實驗進行前，先找出二氧化矽成長速率近乎穩態的時間點。由實驗結果及Dataga[51]所提出的理論依據，知道二氧化矽成長速率近乎穩態的時間點為0.5秒。藉由水橋內電場強度的分佈，配合離子濃度統御方程式，得到矽晶圓表面氫氧離子濃度分佈，由濃度分佈繪出二氧化矽形貌。其中水橋內電場強度的分佈又與施加的電壓、探針半徑及探針與矽晶圓最短間距相關，因此所建立的理論模型在分析氧化時間0.5秒下，施加的電壓、探針半徑及探針與矽晶圓最短間距對形成的二氧化矽半高寬的估算，並與實驗結果相比較。

由實驗結果，影響生成的二氧化矽半高寬的三個參數。當施加的電壓越大，生成的二氧化矽寬度越大；探針半徑尺寸越大，生成的二氧化矽寬度越大；探針與矽晶圓最短間距拉遠時，生成的二氧化矽寬度變小。與建立的理論模型，所分析的結果，趨勢正確。

The behavior and profile of oxide grown by the Atomic Force Microscope (AFM) probe on silicon wafer is researched in view of electrochemical reaction in this study. There are not many theoretic models describing how the parameters affect height and width of grown silicon oxide. Two parts are involved in our theoretic analysis: one is the profile of water bridge determined by balance of mechanics; and the other is the FWHM of grown dioxide analyzed by calculating the OH ion distribution on the silicon wafer before and after reaction by the governing equation.

Before proceeding experiments, the time how long the reaction and the growing rate of silicon oxide get steady is tested in order to check if the steady state analysis is suitable. According to the result of the experimental tests and Dataga’s theory, the growing rate goes almost steady after 0.5 seconds. Therefore the oxidation time is the fixed parameter, and the changing parameters are the induced voltage, V, probe’s radius of curvature, R, and the shortest distance between probe and wafer, D.

According to the experimental results and the theoretical analysis, the three parameters affect the grown profile of silicon dioxide as following: the larger induced voltage, the wider oxide; the bigger probe’s radius of curvature, the wider oxide; the smaller distance between probe and wafer, the narrower oxide. The experimental results show the same trends as the theoretical analysis.

摘要...................................................... Ⅰ
英文摘要.................................................. Ⅱ
誌謝...................................................... Ⅲ
目錄...................................................... Ⅳ
表目錄.................................................... Ⅶ
圖目錄.................................................... Ⅷ
符號說明................................................. ⅩⅢ

第一章 緒論................................................1
1-1前言.................................................1
1-2文獻回顧.............................................2
1-3研究目的及內容.......................................6
第二章基本理論............................................. 15
2-1原子力顯微鏡微影基本原理...........................15
2-1-1 微影簡介........................................15
2-1-2奈米氧化物生成原理..............................16
2-1-3 離子之傳輸性質..................................17
2-2 水橋輪廓建立模式..................................... 18
   2-2-1 表面張力........................................ 18
	2-2-2 水橋內外壓力差.................................	. 18
 	2-2-3 水橋的形成...................................... 19
	2-2-4 水橋最小頸寬的大小對氧化矽的影響................ 22
2-3水橋內電場強度分佈................................... 22
2-4氫氧離子於穩態下在矽晶圓表面濃度分佈................. 23
2-4-1離子濃度統御方程式...............................23
2-4-2電場強度與離子濃度之關係....................... 26
2-4-3電壓與離子濃度之關係........................... 29
2-5二氧化矽成長速率近乎穩態之時間點.....................32
2-6離子濃度統御方程式之邊界條件.........................33
2-6-1 邊界條件 ........................................33
2-6-2臨界電壓........................................33
2-6-3臨界濃度......................................33
2.7 理論模式分析.........................................35
2-7-1氫氧離子於穩態下在矽晶圓表面濃度分佈之理論分析...35
2-7-2生成的氧化矽寬度之理論分析.......................36
2-7-3氧化矽半高寬.....................................36
第三章  實驗方法及步驟..................................... 49
3-1實驗目的.............................................49
3-2 實驗儀器與設備.......................................49
3-2-1 SPM系統設備....................................49
3-2-2規格和構成.......................................50
3-2-3實驗材料.........................................54
3-2-4實驗步驟.........................................54
3-3 實驗參數............................................ 56
3-4 二氧化矽線寬與高度分佈...............................57
第四章  結果與討論.......................................  66
4-1水橋最小頸寬..................................66
4-1-1 水橋輪廓分析................................... 66
4-1-2 水橋最小頸寬分析結果與討論..................... 66
4-2 理論分析下二氧化矽形貌圖.............................67
4-3穩態下生長二氧化矽之實驗數據.........................69
  	4-4 理論分析與實驗結果之討論............................ 70
	4-5 氫氧離子濃度冪次n之探討............................ 72
	4-6 掃描速度之探討....................................... 73
第五章 結論與未來研究方向................................. 104
  	5-1結論................................................ 104
	5-2未來研究方向........................................ 105
參考文獻.................................................. 106
自述...................................................... 110
                                    

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校外：2004-07-31公開

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