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研究生： 陳思元
Chan, Si-Yuan
論文名稱： 電場調控氧化鋅迴廊耳語模式微米柱共振腔之光致雷射放光行為
Electric field modulation of optically pumped whispering gallery mode lasing behavior from zinc oxide microrod
指導教授： 徐旭政
Hsu, Hsu-Cheng
學位類別： 碩士
Master
系所名稱： 理學院 - 光電科學與工程學系
Department of Photonics
論文出版年： 2019
畢業學年度： 107
語文別： 英文
論文頁數： 70
中文關鍵詞： 氧化鋅微米柱 、迴廊耳語模態共振腔 、載子的再分配
外文關鍵詞： Zinc Oxide, whispering-gallery mode, carrier re-distribution
相關次數： 點閱：156  下載：3 
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    • 本論文探討一全新策略，透過外加電場調控氧化鋅六角柱的迴廊耳語模態雷射的放光表現。
    施加外加電場的作用會影響電子電洞對的庫倫作用力，從而影響半導體的光致放光效率。當外加電場足以克服其庫侖作用力時，電子與電洞會分離。本實驗是透過調控分離的載子分佈，改變氧化鋅柱的光致雷射放光表現。當施加的外加偏壓還未克服庫倫作用力時（如5 V），氧化鋅的雷射閾值在相對不加偏壓時增加了至少3倍。當在施加的偏壓已克服庫倫作用力時（如17 V），使分離的高能載子累積在迴廊耳語共振的路徑上，最後可減少其雷射閾值至少3倍。
    透過這種方式，可以有效地調控氧化鋅迴廊耳語共振腔的雷射放光表現，並有效運用在光電設備上，如超低紫外光雷射閾值、光感測器等。

    In this work, we report a new strategy to modulate the intensity of the whispering-gallery-mode (WGM) lasing behavior of ZnO micro-rod (MR) via external electric field. The lasing threshold was reduced more than 3.5-fold when an electric field of 17 V was applied. However, the lasing threshold was nevertheless increased at least 3-fold if a 5V external electric field was applied. Our approach results from the regulation of carrier distribution and their behavior via a specific amount of external electric field. When applying a relatively small electric field, the photo-generated electron-hole pairs experienced a force that tried to separate them, diminishing the probability of their recombination. When the applied external electric field was increased, photo-excited electron-hole pairs might dissociate and accumulate near the ZnO surface. As a result, the electron-hole recombination rate near the surface of ZnO increase, which means that the optical gain near the surface region where whispering-gallery mode circulates has been increased when the applied electric field was large enough.
    This strategy can be applied for the future design of energy efficient opto-devices especially in the construction of UV laser and WGM sensing technology.

    摘要 II Abstract III 誌謝 IV Contents V List of Tables VII List of Figures VIII 1 Introduction 1 1-1 Preface 1 1-2 Motivation 9 2 Background Theories 10 2-1 Characteristics of Zinc Oxide 10 2-2 The Optical properties of Zinc Oxide 13 2-2-1 Ultraviolet Emission 13 2-2-2 Green Emission 15 2-3 Microcavities 17 2-3-1 Hexagonal Whispering-Gallery Modes 17 2-4 The contact between metal and semiconductor 20 2-4-1 Schottky barrier contact 21 2-4-2 Ohmic contact 22 2-4-3 Contact between ITO and n-ZnO 23 2-5 Ideal MIS capacitor69 24 2-6 Photo-excited current72 25 3 Experiment Process 27 3-1 Experimental Procedure 27 3-2 Chemical and Consumable 28 3-3 The Growth System of ZnO MRs 29 3-3-1 Chemical Vapor Deposition System 29 3-3-2 Cleaning procedure for Substrates 31 3-3-3 The Growth of ZnO microrods 32 3-3-4 The Transfer of ZnO MR 33 3-4 Samples Preparation 34 3-4-1 Samples for photoluminescence measurements 34 3-4-2 Samples for electric field induced PL measurement 35 4 Measurement Instrument 36 4-1 Field emission scanning electron microscopy 36 4-2 Photoluminescence system 37 4-2-1 Laser excitation source 38 4-2-2 Imaging spectrometer 38 4-3 Electric Field-modulated PL system 40 4-4 Semiconductor Characterization System 41 5 Results and Discussions 42 5-1 Material characterizations 42 5-1-1 Structure characterization of ZnO MRs 42 5-1-2 Structure of C6H7NO2 43 5-2 Optical properties 44 5-2-1 Continuous-wave PL Analysis 44 5-2-2 Pulse laser PL Analysis 45 5-3 Electric field-modulated optical and electrical performances 48 5-3-1 I-V Characteristic of MSM structured device 48 5-3-2 Electric field-modulated lasing behavior of MSM structured device 51 5-3-3 Electric field-modulated lasing behavior of MISIM structured device 53 6 Conclusion 63 7 Prospective Aspects 64 8 Reference 66

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