本論文報導利用磷化銦 / 砷化銦鎵 / 磷化銦 ( InP / InGaAs / InP ) 製作遠紅外線光檢波器、氮碳化矽 ( SiCN ) 製作紫外線光檢波器、以及在矽基板上成長單晶與多晶氮化鎵之一系列研究。
首先討論對於紅外線 (1300 ~ 1550 nm)光檢波器之研究，吾人利用金屬有機化學氣相沈積法 ( MOCVD )經由極高溫 (1100 ℃)預烤反應爐製程，製作出直徑73 μm，具有低暗電流 ( 39 pA )、低電容 ( 43 pF )、高量子效率( 79 % ) 、高崩潰電壓 ( 大於25伏特 )、及高速率 ( 4.53 GHz ) 的遠紅外線光檢波器。此外, 吾人也利用三種不同的鋅擴散時間 (18，20，22分鐘)之製程，探討其對元件特性所造成之影響。
再來描述對於紫外線 ( 254 ~ 480nm ) 光檢波器之研究，吾人利用快速升溫化學氣相沈積法 ( RTCVD ) 在矽基板上成長氮碳化矽薄膜，並製作出高性能的紫外線光檢波器。其暗電流在25℃時為30.3μA，在200℃時為253μA；其光/暗電流比由25℃時的6.5倍降低到200℃時的2.3倍(光源為254nm)、室溫時之崩潰電壓為29伏特(崩潰電壓越大越好)、而在高溫下(200℃)，元件仍保持相當優良的特性，此時崩潰電壓約為5伏特。
最後報導，利用金屬有機化學氣相沈積法 ( MOCVD )，在矽基板上經由氮碳化矽薄膜當緩衝層成長單晶與多晶氮化鎵的研究。經由實驗結果得知，氮碳化矽成長在(111) Si基板上，其原子堆積的密度、表面平滑度分別為氮化碳化矽成長在(100) Si基板的11.3、9.4倍，導致氮化鎵成長在氮碳化矽 / (111) Si基板為單晶結構，而成長在氮碳化矽 / (100) Si基板為多晶結構。

In this dissertation, we reported the investigation of two novel photodetectors, i.e., far infrared InP / InGaAs / InP PIN and ultraviolet SiCN / Si MSM photodetectors, respectively. Additionally, growing single and poly crystalline GaN films on Si-substrate were described in detail.
Firstly, we reported the preparation and characterization of a high performance, front-illuminated PIN photodiode through the pre-bake process. The developed photodiode possesses a very low dark current of 0.041nA, a very low capacitance of 0.47 pF, a very high responsivity of 0.99A/W (79% quantum efficiency) at λ= 1.55 μm, and the 3dB bandwidth of 4.48 GHz at -5V for the device packaged in TO can, respectively. On the other hand, we also presented the investigation of tuning Zn diffusion time to attain a lowest capacitance of 0.43 pF, a lowest dark current of 39 pA and the highest responsivity of 0.99 A/W (79% quantum efficiency atλ= 1.55 μm) for a large area (73 μm in diameter) InGaAs PIN diode for easier coupling with a fiber.
Then, we described the SiCN films grown on silicon substrate by rapid-thermal chemical vapor deposition (RTCVD) for the fabrication of an ultraviolet SiCN / Si MSM (metal-semiconductor-metal) photodetector. The MSM SiCN/Si photodetector is very sensitive for 254nm UV light, so that it is suitable for deep-UV light, detecting applications and there must be very good development in the future. Additionally, the photo/dark current ratios (PDCR) of SiCN photodetector are about 6.5 at 25°C and 2.3 at 200°C, respectively.
Finally, the growth of poly-crystalline GaN on Si (100) and single-crystalline h-GaN on Si (111) substrates with single-crystalline SiCN buffer layer by metal-organic chemical vapor deposition (MOCVD) were depicted. The single-crystalline SiCN on Si (111) substrate possesses 9.4 times in smooth and 11.3 times in grain size smaller than SiCN on Si (100) substrate, which result in GaN on SiCN / Si (100) is poly-crystalline but single-crystalline on SiCN / Si (111).

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