由於氮化鎵具有極佳之光電特性，常用以製作發光二極體、雷射二極體、太陽能電池、光感測元件、高功率電晶體以及高載子遷移率電晶體。一維奈米結構具有獨特高比表面積與低缺陷濃度之特性，已廣泛地應用於各種光電元件之製作。然，本研究將結合氮化鎵與一維奈米結構之優勢，以本實驗室自行開發之爐管型電漿輔助化學氣相沉積設備，成長一維氮化鎵奈米結構。本研究成長氮化鎵材料採用自組裝之成長機制，其將藉以鎵金屬與氮氣作為氮化鎵之前驅物。

本研究成功在Si(100)及c-Sapphire基板上，成長出垂直於基板表面之氮化鎵奈米柱，其藉由掃描式電子顯微鏡(SEM)、穿透式電子顯微鏡(TEM)、顯微光致激發光譜儀(Micro-PL)，以驗證為六角形晶體(Hexagonal structure)、c-plane成長方向、低缺陷濃度且能隙約為3.42eV。另外以氮化鎂(Mg2N3)作摻雜物質以成長p型氮化鎵，藉由摻雜物質蒸氣壓之提升，輔以Micro-PL測量氮化鎵特徵峰往高波長移動以驗證p型氮化鎵之形成，進而成長了具p−n接面之氮化鎵奈米柱，並製作為發光二極體。由元件之電流−電壓整流曲線可證實p−n接面之存在。此外，在30 mA之驅動電流下，也觀察到紫色的電致發光現象。

然，為了改善需於高驅動電壓與電流才可電致發光之問題，其為使電子電洞復合效率提高，其本研究藉由銦摻雜於氮化鎵晶體以形成氮化銦鎵，其藉由銦組成含量以調控能隙大小，使其併入p-n結構中而形成量子井以提高電子電洞復合之機率。本研究將藉以銦金屬、鎵金屬與氮氣成長氮化銦鎵晶體於氮化鎵奈米柱，並藉由X光繞射儀(XRD)與Micro-PL，以判別氮化銦鎵之生成與能隙，並接續於氮化銦鎵晶體上成長p型氮化鎵晶體，進而成長具p-i-n結構之單一量子井發光二極體元件，本研究亦藉由TEM以分析接面所產生之缺陷並進行電性量測。然，由元件之電流−電壓整流曲線可證實p−n接面之存在，但具有明顯之並聯與串聯電阻。其電性結果亦可證明我們所成長之p-i-n接面具有較多之缺陷而造成非輻射複合效率高而未能觀測有電致發光之現象。

GaN is an excellent semiconductor material for applications of light emitting diode, laser diode, sensor and high mobility transistor due to its intrinsic property. The anisotropic property of 1-D nano-structure has been applied in many fields such as optoelectronic devices. In this work, we combine these two advantages and present a self-developed PECVD system for the 1-D nano structural GaN growth. The GaN nanorods are grown via self-assembled mechanism while using Gallium metal and Nitrogen as the GaN precursors.

In this study, the vertically-aligned GaN nanorods are successfully grown on both the Si (100) and c-sapphire substrate. The nanorods morphology and crystal quality are investigated by the Scanning Electron Microscope (SEM), Transmission Electron Microscopy (TEM) and Micro- Photoluminescence (Micro-PL) to identify. The analytic results for the GaN nanorods, which possess the Hexagonal structure, prefer c-plane orientation, low defect density and a band gap about 3.4eV. We also used the Magnesium nitride (Mg3N2) as the p-type GaN dopant precursor, then analyzed by the Micro-PL. In the Micro-PL result, we observed the Near-Band-Edge peak red shift indicating that the existence of p-type GaN.

The GaN nanorods with p−n junctions were made into light emitting diode devices. The rectifying I−V curves further confirmed the formation of p−n junction in the GaN nanorods with the violet electroluminescence found under 30 mA. We also investigated the critical factor for the lower radiative recombination efficiency of GaN nanorods-based LED. Our intrinsic and p-type GaN nanorods have shown a low free carriers concentration, indicating the LED device is made without enough electrons and holes to carry out radiative recombination.

To solve the lower electron-hole recombination, we introduced the lower band gap semiconductor material, Indium Gallium Nitride (InGaN), between the p-n junction to form the quantum well to increase the efficiency of electron-hole recombination. For fabrication of the InGaN crystal, we used the Indium, Gallium metal and Nitrogen as the precursors. The Micro-PL and X-Ray Diffraction (XRD) are used to identify the Band gap shift and lattice constant change. Since the growth condition change leads to heteroepitaxy, we used the TEM to observe the surface defect between the GaN and InGaN. The GaN nanorods with p−i−n single quantum well were made into light emitting diode devices. The rectifying I−V curves could be found where the I−V curves present both the parallel and series resistance that further confirmed the surface defect formation between the GaN and InGaN surface. In this part, the electroluminescence phenomena was not found. We proposed that the large amount of defect inside the crystal have increased the efficiency of non-radiative recombination.

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