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研究生： 許紹倫
Xu, Shao-Lun
論文名稱： 以表面預處理及閘極後熱退火製備之氮化鋁鎵/氮化鎵金氧半高電子遷移率電晶體
Surface Pretreatment in AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Post Gate Annealing
指導教授： 王永和
Wang, Yeong-Her
學位類別： 碩士
Master
系所名稱： 電機資訊學院 - 微電子工程研究所
Institute of Microelectronics
論文出版年： 2020
畢業學年度： 108
語文別： 英文
論文頁數： 97
中文關鍵詞： 氮化鋁鎵/氮化鎵 、高電子遷移率電晶體 、四甲基氫氧化銨溶液 、原子層沉積法 、氧化鋁鉿 、閘極後熱退火
外文關鍵詞： AlGaN/GaN, high electron mobility transistors (HEMTs), TMAH treatment, Atomic Layer Deposited (ALD), HfO2, post gate annealing (PGA)
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    • 氮化鋁鎵/氮化鎵高電子遷移率電晶體（HEMT）具有高崩潰電場，高電子遷移率和高電子密度，因此在高功率下具有出色的性能。然而，閘極及汲極的漏電流卻會對元件輸出特性及元件表現上造成影響。因此，在本實驗中採取了兩階段的表面處理，透過減少元件缺陷來抑制漏電流。利用四甲基氫氧化銨溶液法去除氮化鎵表面原生氧化層及蝕刻造成的表面損傷；透過閘極後熱退火減少磊晶產生之介面狀態缺陷及晶格不匹配產生之缺陷，以提升元件輸出特性。本實驗之以原子層沉積法製備氧化鋁鉿閘極介電層及兩階段表面處理之氮化鋁鎵/氮化鎵金氧半高電子遷移率電晶體在閘極5 V時的最大汲極電流為791 mA/mm，最大轉導值為130 mS/mm，次臨界擺幅與電流開關比分別為91 mV/dec與1.2 × 109。閘極漏電流有效地被抑制住來到了1.31 × 10-10 A/mm，三端的崩潰電壓也提升到了200 V。

    AlGaN/GaN High Electron Mobility Transistor (HEMT) devices deliver excellent performance in high power applications owing to their wide bandgap, high electron mobility, and high electron sheet density. Nevertheless, the leakage current of the gate and the drain has an impact on the output performance of the device. In this thesis, a two-stage surface treatment is adopted to reduce leakage current by removing device defects. A tetramethylammonium hydroxide solution is applied to remove the native oxide on the GaN surface and the surface damage caused by etching. Post-gate annealing is used to reduce the interface state defects caused by the epitaxy process and lattice mismatch. In this thesis, the maximum drain current of HfO2 AlGaN/GaN MOSHEMT is 791 mA/mm at VG = 5 V. The maximum transduction value is 130 mS/mm, and the subcritical swing and on-off ratio are 91 mV/decade and 1.2 × 109, respectively. The gate leakage current is effectively suppressed to 1.31 × 10-10 A/mm, and the breakdown voltage of the three terminals is also raised to 200 V.

    中文摘要 I Abstract III 誌謝 V CONTENTS VII List of tables XI List of Figures XII Chapter 1 Introduction 1 1-1 Background 1 1-2 Motivation 4 1-3 Organization 8 Chapter 2 Principle of AlGaN/GaN HEMTs 9 2-1 Lattice Structure 9 2-2 The Polarization Mechanism of AlGaN/GaN Heterostructure 11 2-2-1 Spontaneous Polarization 11 2-2-2 Piezoelectric Polarization 14 2-3 Two-Dimensional Electron Gas (2DEG) 17 2-4 Ohmic Contact 19 Chapter 3 Experiments 21 3-1 Experimental Equipment 21 3-1-1 Oven 21 3-1-2 Spin Coater 22 3-1-3 Mask Aligner 23 3-1-4 Electron Beam Evaporator 24 3-1-5 Sputter 24 3-1-6 Rapid Thermal Annealing System 26 3-1-7 ICP Etching System 27 3-1-8 ALD System 28 3-1-9 Electron Beam Lithography System 29 3-1-10 Semiconductor Analyzer 30 3-1-11 Atomic Force Microscope 31 3-1-12 Transmission Electron Microscopy 32 3-2 Device fabrication 33 3-2-1 Sample Cleaning 34 3-2-2 Mesa Isolation 35 3-2-3 Source and Drain Ohmic Contacts 36 3-2-4 Deposition of Gate Insulator 38 3-2-5 Gate Definition 38 3-2-6 Schottky Gate Deposition 39 3-3 Schematic Procedures 40 Chapter 4 Results and Discussion 43 4-1 Surface Roughness of the GaN 43 4-1-1 Atomic Force Microscope Images of the GaN Surface 43 4-1-2 X-ray Photoelectron Spectroscopy of GaN Surface 46 4-2 Physical Properties of ALD HfO2 thin film 48 4-2-1 Transmission Electron Microscopy 48 4-2-2 Energy-Dispersive X-ray Spectroscopy 51 4-3 TMAH Treatment Performance 53 4-3-1 Saturation Drain Current 53 4-3-2 Transfer Characteristics 55 4-3-3 Subthreshold Swing and On-Off Ratio 57 4-3-4 Gate Leakage Current 59 4-3-5 Pulse I-V Characteristics 60 4-3-6 Off-State Breakdown Voltage 62 4-4 Post-Gate Annealing Performance 63 4-4-1 Saturation Drain Current 63 4-4-2 Transfer Characteristics 66 4-4-3 Subthreshold Swing and On-Off Ratio 68 4-4-4 Gate Leakage Current 70 4-4-5 Pulse I-V Characteristics 72 4-4-6 Capacitance Measurement 75 4-4-7 Off-State Breakdown Voltage 80 4-4-8 Cutoff Frequency and Maximum Oscillation Frequency 82 4-4-9 Flicker Noise 84 Chapter 5 Conclusion 85 Chapter 6 Future Work 89 Reference 90

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