由於無線通訊系統的快速發展並隨著高頻元件技術的改進，能夠應用於更高頻率的微波積體電路變的非常重要。在射頻前端系統中，功率放大器是發射器的關鍵性零組件，而功率放大器是用來增加功率信號的一種裝置。在本論文中，其製程部分乃採用砷化鋁鎵/砷化銦鎵/砷化鎵假形高速電子移動電晶體技術，而在隨後的章節裡，將提出幾種應用於S頻段、C頻段及X頻段之單晶微波積體功率放大器電路。除此之外，由於無線收發器系統對功率放大器的輸出功率要求很高，在毫米波頻段，靠單一功率源和功率放大是很難獲如此高的功率，例如數百瓦特，這時就需要微波功率結合技術。因此，我們亦會提出一個新穎的威爾金森功率分配/結合器。
首先在S 頻段的放大器，我們提出了三種不同偏壓形式之功率放大器。我們設計一個小尺寸，兩級高線性度之功率放大器，輸出功率可達3.5瓦特並且功率效率可達到37.1%。為了於使偏壓較為容易，且不需額外的DC-to-DC的轉換器，所以開發只用單一電壓源的放大器，是未來系統所需要的趨勢，其實用性較一般雙偏壓PHEMT放大器的設計更要來的方便。為了此目的，利用以平台蝕刻的方式取代薄膜電阻並簡化PHEMT功率放大器製程的技術來實踐自偏壓電阻。此外，我們也利用零閘極偏壓(也稱為半增強型)PHEMT製程，完成一個兩瓦放大器。接著為了C頻段之應用，我們也發展了C頻段功率放大器，其輸出功率可達四瓦特。
此外，我們以單晶微波積體電路形式進行了三種不同應用的X頻段功率放大器之設計。首先，我們提出一個兩級9瓦特的功率放大器並且功率效率可達到34%的功率放大器，其面積只有10.92 mm2。其次，為了高增益的應用，我們設計了一個放大器，其特性可以達到最大輸出功率為10瓦特並且擁有40dB的增益。最後，為了功率放大器在能達到高功率及其高效率之應用，我們進一步設計研發可達到12.6瓦特脈波輸出功率並且功率效率可達到52.6%之X頻段功率放大器。
最後，我們在陶瓷基板上實踐一個新的威爾金森寬頻的功率分配/結合器。我們利用兩階的低通電路來取代四分之ㄧ波長的微帶線，已達到寬頻的特性。

With the rapid development of the wireless local area network and the improvement of technology devices, monolithic microwave integrated circuits (MMICs) have become very important because of their high frequency characteristics. In the RF front-end system, a power amplifier which is used to amplify RF signals is the key element in microwave transmitter systems. In this dissertation, the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs) technology will be adopted. In the subsequent chapters, several power amplifier MMICs covering the frequency range of S-band, C-band, and X-band will be designed and demonstrated. A very high power level is required for the output power in microwave T/R systems. However, it is very difficult to obtain this with the use of the single power amplifier. Therefore, a novel architecture of a broadband Wilkinson power combiner/divider will have to be developed.
For S-band power amplifiers, three types of power amplifiers that use the different bias conditions will be presented. A compact, two-stage 2W MMIC power amplifier with 37.1% PAE and high linearity will also be designed and demonstrated. A single-bias MMIC power amplifier is more attractive to develop especially in cases where additional DC-to-DC converters are not available. Hence, the single-bias MMIC, more often than not, is more convenient than the D-mode PHEMT power amplifier. To prove this, the implementation of an etched mesa layer as the self-bias resistor for a single voltage circuit configuration will have to be demonstrated. This layer replaces the thin film resistor. Second, PHEMT amplifier fabrication processes have to be simplified. Likewise, the use of the zero gate bias configuration (quasi-E mode) PHEMT process will achieve a 2W two-stage power amplifier MMIC. A 2-stage 4.4W PHEMT MMIC high-power amplifier suitable for C-band applications will be presented.
Three types of high-power amplifiers for X-band are proposed. The first is a compact, 9W two-stage X-band power amplifier MMIC with the characteristics of 34% power added efficiency and a chip size of 10.92 mm2. The second, intended for high gain application, is a four-stage 10W X-band PHEMT MMIC high-power amplifier. The characteristics of this MMIC are as follows: a 40 dB small-signal gain, a better than 5/10 dB input/output return loss, and a Psat of 10W. The third is a power amplifier MMIC with a 12.6W pulse saturation output power of 52.6% PAE intended for high output power and high PAE applications.
A novel architecture of a broadband Wilkinson power combiner/divider fabricated on Al substrate will be constructed. With the use of a two-section low-pass network instead of the quarter-wavelength line, the bandwidth will be improved.

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