本研究主要著重在氣相沈積合成多元鈣鈦礦薄膜載在n-type結構之太陽能電池以及在不同濃度、反應時間、摻雜分子下合成鈣鈦礦膜之分析。由初期高真空下的共蒸鍍系統發展出的不同氣相沈積合成法，透過緩慢的反應過程來達到較好的成核與成長過程，氣相沈積合成之鈣鈦礦晶粒大且無破洞可減少缺陷與漏電的產生，在吸收(UV-vis)與受激螢光放光(Photoluminescence)等光學分析上皆與溶液製成法合成之高效率鈣鈦礦有相同的結果，說明氣相沈積為可合成高效率鈣鈦礦的方法之一。氣相沈積除了使用在傳統之MAPbI3的鈣鈦礦外也可用於不同材料，FAPbI3(Formamidinium lead iodide)是一個能隙寬較MAPbI3窄的材料，因此吸光範圍會紅移而使光電流提升而進一步優化來達到元件效率的提升，透過摻雜FAI其鈣鈦礦太陽能電池元件效率達到15.48%。摻雜MABr其鈣鈦礦太陽能電池元件效率達11.84%。

In this research, we manufactured multi-component perovskite films by VASP method. We change the reaction time of fabricated CH3NH3PbI3 perovskite films. The PSCs fabricated at reaction time 2 h have the best performances with Voc of 1.01 V, Jsc of 20.99 mA cm-2, and FF of 0.70, leading to an overall efficiency of 15.10%. We change the powder of fabricated multi-component perovskite film via VASP method. We used the FAI and MABr powder to a dual-source vapor deposition process in 2 h at 150 °C. The PSCs fabricated by only doping FAI have best performance with Voc of 1.02 V, Jsc of 19.54 mA cm-2, and FF of 0.76, leading to an overall efficiency of 15.48%.

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