本研究旨在使用Ansys Fluent®建立一化學機械研磨(Chemical Mechanical Polishing, CMP)模型，利用計算流體動力學（Computational Fluid Dynamics, CFD），模擬研磨液在晶圓和研磨墊（CMP）之間的界面中的行為。

首先使用多相模型方程式模擬研磨液粒子的流動，了解其粒子運動及其在研磨墊子分布情況，並使用不同溝槽型式之研磨墊分析其型貌變化對於晶圓移除率與不均勻度的影響，在相同操作條件下，以同心圓墊和徑向槽墊兩種不同之幾何設定參數模擬後探討其壁面剪應力、晶圓表面在某特定時間下之研磨液質量分布、以及其壓場分布。

根據研究結果顯示，徑向槽之壁面剪應力較大，同心圓之壓場分布中之負壓區較大，以及逕向槽中之晶圓漿料質量分布較為均勻，因同心圓墊溝槽所占面積比較大，研磨液粒子數在溝槽停留較多，因此實際作用於研磨面之有效磨粒數減少，晶圓移除率隨之下降。得知溝槽之所占面積比增加將會降低其移除率。

This study aims to establish a Chemical Mechanical Polishing (CMP) model using Ansys Fluent® and simulate the behavior of the polishing slurry at the interface between the wafer and the polishing pad using Computational Fluid Dynamics (CFD).

Firstly, the multiphase model equations are used to simulate the flow of the polishing slurry particles, understand their particle motion, and their distribution on the polishing pad. Different groove patterns on the polishing pad are analyzed to investigate the effects of their morphological changes on wafer removal rate and uniformity. Under the same operating conditions, simulations are conducted with two different geometric configurations: concentric grooves and radial grooves. The study examines the wall shear stress, mass distribution of the polishing slurry on the wafer surface at a specific time, and the pressure field distribution.

According to the research results, the radial grooves exhibit higher wall shear stress, larger negative pressure region in the pressure field distribution of concentric grooves, and more uniform mass distribution on the wafer surface in the radial grooves. Due to the larger area occupied by the concentric grooves, more polishing slurry particles reside in the grooves, resulting in a reduced effective abrasive particle count acting on the polishing surface and consequently decreasing the wafer removal rate. It is concluded that an increase in the area occupied by the grooves will lead to a decrease in the removal rate.

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