本論文為具干涉結構之摻鈮氧化釩熱阻式微感測器的特性研究，針對兩方向優化元件，一為利用摻雜鈮元素於氧化釩感測層，藉此影響薄膜電特性，提升對溫度的靈敏性，並從實驗中探討鈮元素摻雜多寡，找出感測層最佳製程條件；二為元件上新增中心窗口，利用此設計減短元件後端製程蝕刻形成橋式懸浮結構所需時間，提升製程效率，最後將其應用在元件製程中。其中元件設計採用干涉結構可有效避免熱能經矽基板散失，減少熱散逸，提升元件響應度。
本實驗以磁控式濺鍍系統製作摻鈮氧化釩薄膜，利用釩金屬靶與五氧化二鈮靶並通入氬氣與氧氣進行共濺鍍，調整濺鍍五氧化二鈮之時間控制摻雜量，獲得最佳條件摻雜鈮比例2.92%之摻鈮氧化釩的薄膜溫度電阻係數為2.55 %/oC，高於未摻雜之氧化釩薄膜的2.08 %/oC，且其室溫下電阻率為9.88 Ω-cm，符合紅外線焦平面之讀出積體電路(read-out integrated circuit, ROIC)製程需求，將結果應用在後續氧化釩熱阻式微感測器元件上。
元件設計架構依序為薄金屬吸收層、感測層、適當中間空腔與最下方反射鏡加總，利用此結構形成的建設性干涉，提升對紅外線之吸收率。在元件製程後端添加中心蝕刻懸浮結構之窗口，將蝕刻空腔所需時間從4小時45分減少至2小時30分，提升製程效率，最後製作三種元件並進行特性分析，三種元件分別為氧化釩熱感元件、新增中心窗口之氧化釩熱感元件與新增中心窗口之摻鈮氧化釩熱感元件，其中新增中心窗口之摻鈮氧化釩熱感元件的響應度為812.78 kV/W，高於新增中心窗口之氧化釩熱感元件的響應度667.12 kV/W以及氧化釩熱感元件的響應度655.35 kV/W，使元件有較佳之感測特性。

In this study, there are two ways to optimize the performance of VOx microbolometers. One is to make the Niobium (Nb) doped into the VOx films, letting the electrical properties of the VOx film be changed to enhance its sensitivity. Then, find out the best parameter for growing VOx:Nb films by varying the contents of Nb-doped. Another one is to add a central window to the device. The design is used to reduce the etching time from the back-end process and make it more efficient. Finally, the results are both applied to the process of bolometers with interferometric. At the input current of 1 μA, the responsivity, thermal time constant, thermal conductivity, IR absorbance, NEP and detectivity of the VOx:Nb microbolometer is 812.78 kV/W, 4.56 ms, 5.78×10-8 W/K, 62.24%, 3.54×10-10 W and 1.41×108 cmHz0.5W-1, respectively. Comparing with the responsivity of VOx microbolometers without a central window applied, it can be confirmed that the former have greater responsivity and more efficient process.

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