傳統的表面聲波濾波器(SAW Filter)若要應用於高頻範圍，除了必須選擇高傳播速度的基板外，尚需將交叉指狀電極(Interdigital Transducer , IDT)間的距離縮小至1μm以下，方能製作出可應用於GHz頻帶的表面聲波濾波器。有鑑於此，本論文中試著將方形耦合微帶線(square coupled microstrip)與交叉指狀電極結合，希望藉由方形耦合微帶線高頻的特性，將濾波器的使用頻率提昇，同時亦探討傳播速度遠遠不及電磁波的表面聲波在這個結構下扮演何種功能。

在本論文中，利用半導體製程中的微影、蒸鍍技術將濾波器製作於具有壓電性的鈮酸鋰(64°Y- LiNbO3)基板，及非壓電性的矽(SiO2/Si)基板上。同時利用IE3D軟體模擬電磁波在此種整合性結構濾波器的頻率響應，藉此與實驗值作一比較與分析。

The normal surface acoustic wave (SAW) filter is often used in the lower frequency range because of its low velocity. If the SAW filter wants to be operated in the GHz range , the distance between interdigital transducers (IDTs) must scale down to 1μm while selecting the high-speed propagation substrate. Therefore, the IDTs structure combined with square coupled microstrip is made. The high frequency response based on this structure is expected and the role-playing of the SAW in this structure will be analyzed.

In this paper, utilizing the semiconductor process including lithography and evaporation, the filter is fabricated on the piezoelectric and non-piezoelectric substrate, respectively. The experimental result is compared with simulation result by using IE3D software to simulate electromagnetic wave response.

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