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研究生: 廖嘉哲
Liao, Chia-Che
論文名稱: 氧化鈷奈米薄膜覆蓋於n型氮化鎵作為光電極用於光電化學分解水製氫
The study of CoOx nanofilms coated on n-GaN as photoelectrode for photoelectrochemical water splitting
指導教授: 許進恭
Sheu, Jinn-Kong
學位類別: 碩士
Master
系所名稱: 理學院 - 光電科學與工程學系
Department of Photonics
論文出版年: 2019
畢業學年度: 107
語文別: 中文
論文頁數: 114
中文關鍵詞: 光電化學水分解氮化鎵氧化鈷光腐蝕
外文關鍵詞: Photoelectrochemical, Water Splitting, Gallium Nitride, Cobalt Oxide, Corrosion
相關次數: 點閱:137下載:10
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  • 太陽能與海水是地球上十分充沛的資源,利用半導體能將太陽能轉化為化學電勢,以加工海水做為電解液,進行光電化學反應之能源轉換,生成氫氣如此潔淨之綠色能源,氫能在燃燒後僅會產生水;此外,能源轉換能夠降解溫室氣體二氧化碳,生成工業用甲酸,反應過程中的反應物及產物均非汙染物,後續能源應用相較於石化燃料而言,氫能是極低汙染的燃料。這種能源生成是極具潛力的,期待未來能夠成為永續且優異的綠色能源轉換方法。
    本篇論文主要探討試圖利用氧化鈷材料保護層加強氮化鎵在光電化學系統中的耐久性,加入氧化鈷這樣的催化劑可以在其與半導體之間的界面形成內建電場增加電荷分離效率。此外,有研究顯示氧化反應的催化劑可以透過從光陽極中截取光生電洞來改善光陽極的穩定性,進而抑制光腐蝕現象。首先我們討論磁控濺鍍不同厚度的四氧化三鈷於氮化鎵基板上的光電化學表現,發現緻密濺鍍氧化鈷薄膜的阻抗高,較不利於載子傳輸,易被內部缺陷複合,導致整體光電流密度表現較差。為了改善緻密濺鍍氧化鈷薄膜不利於載子傳輸的問題,我們利用鹼性電解液使鈷離子相轉變至利於光陽極氧化反應的操作位點,造成的表面破孔也能使光陽極與電解液接觸面積增加,能有效提升反應的飽和光電流密度。
    另外利用熱蒸鍍鈷金屬退火的製程手法形成部分覆蓋的氧化鈷薄膜在氮化鎵基板上。此方法一樣可以改善緻密濺鍍氧化鈷薄膜的缺點,鈷離子扮演良好的氧化反應催化劑,相較於n-GaN標準試片,除了過電位的降低,也在飽和電流有提升的趨勢。證實利用鈷離子這樣的觸媒可以有較將光陽極操作在較佳的位點去進行光電化學產氫。

    This thesis mainly discusses the attempt to enhance the durability of gallium nitride in photoelectrochemical systems by using a protective layer of cobalt oxide. The addition of a catalyst such as cobalt oxide can form a built-in electric field at the interface between the semiconductor and cobalt oxide to increase the charge separation efficiency. Firstly, we discuss the photoelectrochemical performance of sputtering different thicknesses of cobalt oxide on a gallium nitride substrate. It is found that the densely sputtered cobalt oxide film has high impedance, is not conducive to carrier transport, also easily recombined by internal defects, resulting in overall photocurrent density performance is poor. In order to improve the problem of densely sputtered cobalt oxide film, we use an alkaline electrolyte to convert the cobalt ion phase to an operating site that facilitates photoanodizing, and the surface cracking that also increases the contact area between photoanode and electrolyte, which can effectively increase the saturated photocurrent density of the PEC reaction.
    In addition, a partially covered cobalt oxide film is formed on the gallium nitride substrate by thermal evaporation of cobalt metal annealing. This method can improve the shortcomings of the densely sputtered cobalt oxide film. The cobalt ion is a good oxidation reaction catalyst. This method can increase the saturation current. It has been confirmed that a catalyst such as cobalt ion can perform photoelectrochemical hydrogen production by operating the photoanode at a preferred phase.

    摘要 I SUMMARY II INTRODUCTION II MATERIAL AND METHODS III RESULT AND DISCUSSION III CONCLUSION IV 誌謝 VII 目錄 VIII 表目錄 XII 圖目錄 XIII 第一章 序論 1 1.1前言 1 1.2 研究動機與文獻回顧 3 1.3 論文大綱 6 第二章 理論基礎原理 7 2.1 半導體原理 7 2.2 光電化學系統 9 2.2.1光電化學水分解反應 9 2.2.2暗態下的半導體-電解液接面 11 2.2.3半導體工作電極 12 2.2.4參考電極 14 2.2.5對電極 16 2.3 光電化學系統產物產率及能量轉換效率 18 2.4 實驗儀器及材料 20 2.4.1 實驗儀器 20 2.4.1 實驗材料 21 第三章 探討氮化鎵濺鍍四氧化三鈷用於光電化學系統 22 3.1 前言 22 3.2試片製備及實驗裝置 23 3.2.1 n型氮化鎵薄膜製程 23 3.2.2 四氧化三鈷/n型氮化鎵(Co3O4/n-GaN)濺鍍製程 23 3.2.3 電解液配置 25 3.2.4 光電化學實驗裝置系統 25 3.3不同厚度四氧化三鈷/n型氮化鎵的特性量測分析及討論 27 3.3.1 紫外光-可見光光譜儀 27 3.3.2 拉曼光譜(Raman Spectra) 28 3.3.3 掃描式電子顯微鏡(Scanning Electron Microscope, SEM) 30 3.4 氮化鎵濺鍍四氧化三鈷於光電化學三電極系統中降解二氧化碳生成氫氣與甲酸 31 3.4.1 線性伏安法及三電極穩定性測試 31 3.4.2 三電極系統下穩定性測試後SEM量測 33 3.4.3 三電極系統下3000秒穩定性測試後對電極產物分析 36 3.5試片2nm Co3O4 /n-GaN進行Co離子相轉變於光電化學系統之特性分析 37 3.5.1三電極系統中工作電極通過鹼性電解液進行相轉變 37 3.5.2 掃描式電子顯微鏡(Scanning Electron Microscope, SEM) 39 3.5.3 原子力顯微鏡(Atomic Force Microscope, AFM) 41 3.5.4 X射線光電子能譜學(X-ray photoelectron spectroscopy, XPS) 43 3.5.5 Mott–Schottky量測分析(三電極系統) 52 3.5.6開路電壓量測(Open Circuit Potential, OCP)(三電極系統) 54 3.5.7電化學阻抗頻譜分析 (Electrochemical Impedance Spectroscopy, EIS)(三電極系統) 56 3.6通過鹼性溶液進行Co離子相轉變之2nm Co3O4 /n-GaN於光電化學二電極系統中生成氫氣 60 3.6.1二電極系統中線性伏安法(LSV)及工作電極穩定性測試 60 3.6.2二電極系統下10800秒穩定性測試後對電極產物分析 64 3.6.3應用偏壓光子-電流效率 (Applied Bias Photon-to-current Efficiency, ABPE) 65 3.6.4 二電極系統下穩定性測試後SEM量測 67 3.6.4 二電極系統下穩定性測試後AFM量測 71 第四章 探討不同退火溫度下之鈷氧化物/n型氮化鎵用於光電化學系統 73 4.1 前言 73 4.2試片製備及實驗裝置 73 4.2.1 n型氮化鎵薄膜製程 73 4.2.2 氧化鈷/n型氮化鎵(CoOx/n-GaN)熱蒸鍍製程 74 4.2.3 電解液配置 76 4.2.4 光電化學實驗裝置系統 76 4.3不同退火溫度下之鈷氧化物/n型氮化鎵的特性量測分析及討論 78 4.3.1 紫外光-可見光光譜 (UV-Visible Spectroscopy) 78 4.3.2 拉曼光譜 (Raman Spectra) 80 4.3.3 掃描式電子顯微鏡 (Scanning Electron Microscope, SEM) 81 4.3.4 原子力顯微鏡 (Atomic Force Microscope, AFM) 83 4.3.5 X射線光電子能譜學(X-ray photoelectron spectroscopy, XPS) 85 4.3.6 Mott–Schottky量測分析(三電極系統) 90 4.3.7開路電壓量測 (Open Circuit Potential, OCP)(三電極系統) 91 4.3.8電化學阻抗頻譜分析 (Electrochemical Impedance Spectroscopy, EIS)(三電極系統) 93 4.4不同退火溫度下之鈷氧化物/n型氮化鎵於光電化學二電極系統中生成氫氣 97 4.4.1二電極系統中線性伏安法 97 4.4.2二電極系統中工作電極穩定性測試及SEM分析 99 4.4.3二電極系統下10800秒穩定性測試後對電極產物分析 101 4.4.4應用偏壓光子-電流效率 (Applied Bias Photon-to-current Efficiency, ABPE) 102 4.4.5 二電極系統下穩定性測試後SEM量測 104 4.4.6 二電極系統下穩定性測試後AFM量測 107 第五章 結論與未來展望 109 5.1結論 109 5.2未來展望 110 參考文獻 111

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