在本篇論文中我們探討n型金氧半場效電晶體的熱載子效應與p型金氧半場效電晶體的負偏壓溫度效應。
熱載子效應的實驗結果發現元件的最快加速退化情況為閘極偏壓在最大基極電流時，而介面缺陷為最主要的影響機制。負偏壓溫度效應的實驗我們得到可用來推測元件在指定的溫度下可操作十年時的工作電壓的經驗公式。
以上的實驗我們以ICS (Interactive Characterization Software) 軟體控制Agilent 4155B來對點一五微米製程技術的元件進行量測以達到我們的實驗目的。

In this thesis, we discussed hot-carrier effects in n-MOSFET and negative bias temperature instability(NBTI) in p-MOSFET.
In n-MOSFET, we found the worst case stress condition occurred under Vg=peak Isub at operating voltage, and interface traps are primary damage in n-MOSFET. In p-MOSFET, we have derived an empirical equation which can be used to extrapolate the 10 years operating voltage under a specified temperature.
All of the experiments were performed by an Agilent 4155B semiconductor parameter analyzer, controlled by software called ICS (Interactive Characterization Software).

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