SiCN是一種高能隙半導體材料(3.39~4.88eV)，對應光波長為紫外光，因此可以作為紫外光感測器。本論文利用快速升溫氣相沉積系統(RTCVD)，以不同氣體C3H8與MS作為C原子的來源，成長並分析SiCN薄膜，接著再以此薄膜為基礎，在矽晶片上製作SiCN/Si異質接面與SiCN/SiCN同質接面UV光感測器元件。然後經由電性與吸光的量測，檢驗樣品的特性良窳。由實驗得知由C3H8所沉積的N型SiCN的UV光的吸收特性較P型為佳，如再加入一層本質層形成n-SiCN/i-SiCN/p-Si結構則可以將光電流增益提升至10倍以上，同時在150℃高溫環境下仍能有2~3倍的光電流增益。另外由C3H8所沉積的n-SiCN/i-SiCN/p-SiCN同質結構的UV光吸收器，其光電流增益在常溫下更達300000倍以上。因此可見SiCN是個非常好的UV光感測器元件材料。

　This thesis reports the growth and analysis of SiCN films prepared by rapid-thermal chemical vapor deposition (RTCVD). During the growing process, we use two kinds of gas (Propane and MS) for the resource of carbon. Based on XRD, FTIR, AFM, the structure of grown SiCN film is crystalline and embedded in CNx matrix. Additionally, the films with Propane as carbon source possess smoother morphology than the films with MS.
　
　Next, we use SiCN film to prepare SiCN/SI hetero-junction and SiCN/SiCN PN junction UV detectors. Experimental results show the ratio of photo current to dark current under irradiation of UV(254nm) for n-SiCN/p-Si detector is better than that for p-SiCN/n-Si. On the other hand, if an intrinsic layer was added in the structure i.e., n-SiCN/i-SiCN/p-Si, the photo/dark current ratio can be promoted 200% in magnitude. The current ratio decreased with increase of operation temperature. However, up to 150℃ current ratio of all samples can also have 2~3 and work normally. Moreover, the SiCN/SiCN samples possess current ratio more than ten thousand, thus evidences the developed SiCN films are good enough for preparation of high temperature UV detectors.

1.A. Y. Liu and M. L. Cohen, Science 245, 841 (1989).
2.C. M. Sung and M. Sung, Mater. Chem. and Phys. 43, 1 (1996).
3.J. Wei, Y. Gao, D.H. Zhang, P. Hing and Z.Q. Mo,”Growth of SiCN Films by Magnetron Sputtering”, Surface Engineering, 16 (2000) 225-228.
4.J. C. Sanchez-Lopez, C. Donnet, F. Lefebvre, C. Fernandez-Ramos, and A. Fernandez,” Bonding structure in amorphous carbon nitride: A spectroscopic and nuclear magnetic resonance study”, J. Appl. Phys. 90, 675 (2001).
5.A. Badzian, T. Badzian, R. Roy, W. Drawl, Thin Solid Films. 354 (1999)148.
6.Z. X. Cao, “Plasma Enhanced Deposition of Silicon Carbonitride Films and Property Characterization”, Diamond & Relat. Mater. 11, 16-21 (2002).
7.C. Z. Wang, E. G. Wang, Q. Dai, “First principles calculations of structural properties of β-Si3- nCnN4 (n=0, 1, 2, 3)”, J. Appl. Phys. 83 (1998) 1975.
8.X. –A. Zhao, C. W. Ong, Y. C. Tsang, Y. W. Wong, P. W. Chan, and C. L. Choy, Appl. Phys. Lett. 66,2652 (1995).
9.D. W. Wu, D. J. Fu, H. X. Guo, Z. H. Zhang, X. Q. Meng and X. J. Fan, “Structure and characteristics of C3N4 thin films prepared by rf plasma-enhanced chemical vapor deposition”, Phys. Rev. B, 1997, 56, 4949.
10.W. R. Chang, Y. K. Fang, S. F. Ting, Y. S. Tsair, C. N. Chang,. C. Y. Lin, and S. F. Chen, IEEE EDL 24, 565 (2003).
11.L. C. Chen, C. Y. Yang, D. M. Bhusari, K. H. Chen, M. C. Lin, J. C. Lin, T. J. Chuang, Diamond and Relat. Mater., vol.5, p.514, 1996
12.L. C. Chen, D. M. Bhusari, C. Y. Yang, K. H. Chen, T. J. Chuang, M. C. Lin, C. K. Chen, Y. F. Huang, Thin Solid film, vol.303 12, p.66, 1997
13.D. M. Bhusari, C. K. Chen, K. H. Chen, T. J. Chuang, L. C. Chen, M. C. Lin, J. Mater. Res., 12, p.322, 1997
14.L. C. Chen, C. K. Chen, S. L. Wei, D. M. Bhusari, K. H. Chem, Y. F. Chen, Y. C. Jong, Y. S Huang, Appl. Phys. Lett., vol.72, p.2462, 1998
15.J. J. Wu, K. H. Chen, C. Y. Wen, L. C. Chen, X. J. Guo, H. J. Lo, S. T. Lin, Y. C. Yu, C. W. Wang, E. K. Lin, “Effect of carbon source on silicon carbon nitride films growth in an electron cyclotron resonance plasma chemical vapor deposition reactor”, Diamond and Relat. Mater., vol.9, p.556-561, 2000
16.K. H. J. J. Wu, C. Y. Wen, L. C. Chen, C. W. Fan, P. F. Kuo, Y. F. Chen, Y. S. Huang, ”Wide bandgap silicon carbon nitride films deposited by electron cyclotron resonance plasma chemical vapor deposition”, Thin Solid Films, vol. 355-356, p.205-209, 1999
17.J. J. Wu, C. T. Wu, Y. C. Liao, T. R. Lu, L. C. Chen, K. H. Chen, L. G. Hwa, C. T. Kuo, K. J. Ling, “Deposition of silicon carbon nitride films by ion sputtering”, Thin Solid Films, vol.355-356, p.417-422, 1999
18.X. C. Xiao, Y. W. Li, L. X. Song, X. F. Peng, X. F. Hu, “ Structural analysis and microstructural observation of SiCxNy films prepared by reactive sputtering of SiC in N2 and Ar”, Applied surface science, vol.156, p.155-160, 2000
19.Andrew J. Steckl and J. P. Li, “Epitaxial growth of β-SiC on Si by RTCVD with C3H8 and SiH4“, IEEE Trans. Electron devices, vol.39, no.1, p.64-75, 1992
20.J.Anthony Powell, Lawrence G.Matus and Maria A.Kuczmarski, “Growth and characterization of cubic SiC single-crystal films on Si”, J. Electrochem. Soc., vol.134, no.6, p.1558, 1987
21.A. S. Bhuiyan, A. Martinez and D. Esteve, “A new Richardson plot for non-ideal Schottky diodes”, Thin Solid Films, p.93-100, 1988
22.J. D. Hwang, Y. K. Fang, K. H. Wu and D. N. Yaung, “Visible electroluminescence from a novelβ-SiC /p-si n-p heterojunction diode prepared by rapid thermal vapor deposition”, Appl. Phys. Lett., 1995
23.方振宇, “碳化系上成長單晶矽薄膜特性之研究”, 國立成功大學八十三學年度碩士論文
24.才永軒, “RTCVD成長矽基三元材料(SiCN)薄膜及其高溫元件的研究”, 國立成功大學八十九學年度碩士論文
25.張正男, “快速升溫化學氣相沉積成長矽基三元材料(SiCN)薄膜及其應用於光電元件的研究”, 國立成功大學九十學年度碩士論文
26.S. M. Sze, “Semiconductor Device Physics and Technology”, 1985
27.D. R. Lide, “CRC Handbook of Chemistry and Physics 84th ed. ”, 2004
28.汪建民, “材料分析”, 中國材料科技學會
29.Liqing Wu and Meichun Huang et al., ”Theoretical study of valence-band offsets of strained Si1-x-yGexCy/Si(001) heterostructures,” J. Appl. Phys., Vol.86, pp.4473-4476, 1999.