本研究可分為兩部分，第一部份為3,3’-thiobis(1-propanesulfonic acid, sodium salt) (TBPS)分子於金(111)表面自組裝行為的觀察。分別以循環伏安法(Cyclic voltammetry, CV)及電化學式掃描電子穿隧顯微鏡(electrochemical scanning tunneling microscopy, EC-STM)，分析TBPS分子於含氯離子之過氯酸溶液和硫酸溶液中，電極表面的電化學特性，並即時記錄TBPS於金(111)載體表面的脫附行為。實驗結果顯示，此二電解液中，TBPS分子皆於電位0.15 V時進行氧化吸附。含有氯離子之過氯酸溶液中，電位0.65 ~ 1 V形成具有(9  √3)之規則結構的單分子膜，然而於硫酸溶液中，TBPS分子則是在0.6 ~ 0.8 V的區間形成結構(p  √3) ，p = 15、22之單分子膜。
本研究的第二部分是在含有TBPS分子的溶液中進行電化學鍍銅，觀察鍍銅過程中表面銅層的成長模式。由實驗結果得知，在含有TBPS分子之過氯酸溶液中添加氯離子，對於銅UPD及OPD皆有促進的效果，銅的UPD呈現島狀物的沉積型態。而在OPD電位區間則是以3D的模式成長並沉積為表面粗糙度較大的型態。在含TBPS分子的硫酸溶液中，銅的UPD亦呈現島狀物的沉積型態，OPD沉積的量較少且穩定性亦較差，且表面粗糙度較小

This study can be divided into two sections. The potential-induced adsorption behavior and the effects on electrochemical copper deposition of 3,3’-thiobis(1- propanesulfonic acid, sodium salt) (TBPS) on Au(111) were investigated by cyclic voltammetry (CV) and in-situ electrochemical scanning tunneling microscopy (EC-STM). It is revealed that TBPS adsorb on Au(111) at 0.15 V (vs. RHE) in both perchloric acid solution containing chloride and sulfuric acid. For TBPS in HClO4 + Cl-, an ordered structure, (9  √3), was observed between the potential region 0.65 to 1 V in anodic sweep. Furthermore, the ordered structure of the monolayer is identified to be (p  √3), p = 15, 22 in sulfuric acid, and present at 0.6 ~ 0.8 V. In cathodic sweep, TBPS become disordered, and then desorb from the surface at ca. 0.1 V in both cases.
For the second part of this study, electrochemical deposition of copper was performed in the TBPS containing electrolyte. In HClO4 + Cl-, the results show an enhancement effect of Cl- on the underpotential deposition (UPD), and change the roughness of the overpotential deposition (OPD). In sulfuric acid solution, the behavior of copper deposition is similar to that in HClO4, however, the amount of Cu OPD is inhibited and the stability is lower than that in perchloric acid.

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