在此篇論文中，主要藉由水熱法在金中間層成長之側向橋接氧化鋅奈米柱，並分別應用於電阻式記憶體以及紫外光感測器。因此，論文主要分為兩部分，第一部分為側向橋接氧化鋅奈米柱電阻式記憶體之研究；另一部分為側向橋接氧化鋅奈米柱紫外光感測器之研究。
在本文一開始，藉由水熱法所成長之反方向橋接側向氧化鋅奈米柱，研製出新穎記憶體元件。利用簡單的曝光顯影定義出電極，透過此方式不需要聚焦離子束微影技術，並具有更低的成本、較簡單的製程和較高的穩定性。首次研製出了在室溫下可觀察到的負微分電阻現象，並可觀察到轉換和雙穩態單極性電阻轉換特性。此記憶體元件具有穩定且可重複讀寫的特性，並且在高阻態時具有極低之電流值(約為10^−13 A)，和極高的開關電流比為1.56 × 10^6。此外，其負微分電阻的電流峰谷比大於1.76 × 10^2。此元件的負微分電阻和電阻轉換特性可能與對向橋接氧化鋅奈米柱之間的晶界缺陷有關。以結構的觀點來切入觀察，在單晶奈米柱與單晶奈米柱橋接介面處可以發現被孤立的多晶晶界，而其電阻轉換特性將首次被探討。截至目前為止，仍未有文獻詳細探討側向橋接氧化鋅奈米柱元件之記憶體的電阻轉換特性。在此研究成果中發現，側向橋接氧化鋅奈米柱元件具有十分之潛力應用於下一代電阻記憶體和奈米電子元件。
論文的第二部分，我們藉由無晶種、密度控制和加壓成長的方式製備出側向橋接氧化鋅奈米柱，並應用於金屬-半導體-金屬光感測器的研製。此部分分為三個段落。(1) 側向橋接氧化鋅奈米柱應用於金屬-半導體-金屬光感測器：近似單晶結構的氧化鋅奈米柱可成功生長在指叉狀金電極上。施加1 V偏壓，其暗電流為5.00 × 10^−5 A、並其光響應度為1.93 × 10^5 A/W。此外，此光感測器具有高內部的光導增益值為6.28 × 10^5。在低頻雜訊的分析下，此光感測器的等效雜訊功率估計為1.86 × 10^−13 W，檢測度1.12 × 10^12 cm•Hz^0.5W^−1。造成此種結果的原因可能為內部增益機制和高密度橋接氧化鋅奈米柱。此法提供了一個簡單且無須晶種層的方式，製備出高性能之光感測器。(2) 藉由預退火製程，可控制垂直與側向氧化鋅奈米柱之密度，並有系統的透過原子力顯微鏡和掃描式電子顯微鏡進行相關成果之研究。預退火製程的導入對於控制垂直/側向氧化鋅奈米柱的密度和表面型態有直接的影響。近似於單晶結構的氧化鋅奈米柱可直接由金電極側壁成長出來。透過預退火製程，可有效將暗電流可從4.99 × 10^−4降低至7.28 × 10^−7 A（施加1 V偏壓）。高側向密度氧化鋅奈米柱光感測器具有7.01 × 10^3 A/W的光響應度，且紫外光/可見光抑制比為281.21。此外，此光感測器具有高內部增益約為10^4–10^5。在低頻雜訊的分析下，在0、10、和20分鐘預退火後之光感測器的等效雜訊功率，估計為3.58 × 10^−13、 6.78 × 10^−13、和 4.86 × 10^−13 W，對應檢測度為1.85 × 10^12, 1.17 × 10^12, and 1.99 × 10^12 cm•Hz^0.5W^−1。(3) 利用加壓和無晶種之水熱法成長方式製備側向橋接氧化鋅奈米柱於金電極上，並應用於金屬-半導體-金屬光感測器之製備。水熱成長壓力對於表面型態和氧化鋅奈米柱的晶體品質的影響可藉由原子力顯微鏡和光致發光光譜進行有系統的研究。飽和成長壓力對於控制氧化鋅奈米柱的密度和表面型態有直接的影響。透過提高穩態成長壓力所製作出之元件，在施加0.2V時，暗電流可從5.06 × 10^−6降低至5.39 × 10^−8 A。並具有1.25 × 10^4 A/W的光響應度和紫外光/可見光抑制比為1113.92。此外，此光感測器亦具有高內部增益約為10^4–10^5。

In this dissertation, the laterally bridged ZnO nanorods were grown onto the Au intermediate layer by hydrothermal growth method and applied to the resistive random access memory and ultraviolet photodetector applications, respectively. Hence, the dissertation is divided into two parts, one is the investigation of laterally bridged ZnO nanorods-based resistive random access memory, and the other is that of laterally bridged ZnO nanorods-based ultraviolet photodetectors.
In the beginning of this dissertation, a novel memory device based on laterally bridged ZnO nanorods in opposite direction was fabricated by hydrothermal growth method and characterized. The electrodes were defined by a simple photolithography method. This method has lower cost, simpler process, and higher reliability than the traditional focused ion beam lithography method. For the first time, the negative differential resistance and bistable unipolar resistive switching behavior in the current–voltage curve was observed at room temperature. The memory device is stable and rewritable; it has an ultra-low current level of about 10^−13 A in the high resistance state; and it is nonvolatile with an on–off current ratio of up to 1.56 × 10^6. Moreover, its peak-to-valley current ratio of negative differential resistance behavior is greater than 1.76 × 10^2. The negative differential resistance and resistive switching behavior of this device may be related to the boundaries between the opposite bridged ZnO nanorods. Specifically, the resistive switching behavior found in ZnO nanorod devices with a remarkable isolated boundary at the nanorod/nanorod interface was discussed for the first time. The memory mechanism of laterally bridged ZnO nanorod-based devices has not been discussed in the literature yet. In this work, results show that laterally bridged ZnO nanorod-based devices may have next-generation resistive memories and nano-electronic applications.
In the second part of this dissertation, we developed a seedless, density-controlled, and pressurized growth method for laterally bridged ZnO nanorods from Au electrode for use in metal–semiconductor–metal photodetector fabrication. This part divided into three sections. (1) The laterally bridged ZnO microrods grown from Au electrode applied to metal–semiconductor–metal photodetector was fabricated. Interlaced ZnO microrods with approximate single-crystalline structure can be grown from Au electrode fingers. The dark-current was 5.00 × 10^−5 A with an applied voltage of 1 V. Highly dense lateral ZnO micro-rod-based photodetectors produce remarkable responsivity of 1.93 × 10^5 A/W. Moreover, an extremely high internal photoconductive gain of 6.28 × 10^5 exists in the fabricated photodetectors. For a given bandwidth of 10 kHz and 1 V applied bias, the noise equivalent power of photodetectors were estimated to be 1.86 × 10^−13 W, and correspond to normalized detectivity of 1.12 × 10^12 cm•Hz^0.5W^−1. This result may be attributed to internal photoconductive gain mechanism and high-density bridged ZnO microrods. Our approach provides a simple and seed-layer-free method to fabricate high-performance ultraviolet photodetectors. (2) The effect of pre-annealing process on suppressing vertical ZnO nanorods is systematically investigated by atomic force microscopy and scanning electron microscopy. The pre-annealing process is demonstrated to have direct influence on controlling vertical/lateral ZnO nanorod density and morphology. Interlaced and density-controlled ZnO nanorods with approximate single-crystalline structure can be directly grown from the side wall of pre-annealed Au electrode fingers without seed-layer. Through pre-annealing process, dark-current can be decreased from 4.99 × 10^−4 to 7.28 × 10^−7 A with an applied voltage of 1 V. Highly dense lateral ZnO nanorod-based photodetectors produce remarkable responsivity of 7.01 × 10^3 A/W and UV/visible rejection ratio of 281.21. Moreover, a high internal photoconductive gain (10^4–10^5) exists in the fabricated photodetectors. For a given bandwidth of 10 k Hz and 1 V applied bias, the noise equivalent power of photodetectors with 0, 10, and 20 min pre-annealing periods are estimated to be 3.58 × 10^−13, 6.78 × 10^−13, and 4.86 × 10^−13 W, and correspond to normalized detectivity of 1.85 × 10^12, 1.17 × 10^12, and 1.99 × 10^12 cm•Hz^0.5W^−1, respectively. This result may be attributed to internal photoconductive gain mechanism and high-density bridged ZnO nanorods. Our approach provides a simple and controllable method to fabricate high-performance ultraviolet photodetectors. (3) This study develops a pressurized and seedless growth method for laterally bridged ZnO nanorods from Au electrode for use in metal–semiconductor–metal photodetector fabrication. The effect of hydrothermal growth pressure on the morphology and crystal quality of ZnO nanorods is systematically investigated by scanning electron microscopy and photoluminescence spectroscopy, respectively. The saturated growth pressure is demonstrated to have direct influence on controlling ZnO nanorod density and morphology. Interlaced and density-controlled ZnO nanorods with approximate single-crystalline structure can be directly grown from the Au electrode fingers without seed-layer. Through increasing the steady-state growth pressure, the dark-current can be decreased from 5.06 × 10^−6 to 5.39 × 10^−8 A with an applied voltage of 0.2 V. Highly dense lateral ZnO nanorod-based photodetectors produce remarkable responsivity of 1.25 × 10^4 A/W and UV/visible rejection ratio of 1113.92. Moreover, a high internal photoconductive gain (10^4–10^5) exists in the fabricated photodetectors. This result may be attributed to internal photoconductive gain mechanism and high-density bridged ZnO nanorods. Our approach provides a simple and controllable method to fabricate high-performance ultraviolet photodetectors.

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References of Chapter 6
[1] A. Janotti, C. G. Van de Walle, “Fundamentals of zinc oxide as a semiconductor,” Rep. Prog. Phys., vol. 72, pp.126501−29, 2009.
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