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研究生： 姚宗良
Yau, Tzong-Liang
論文名稱： 微中空陰極製作及電漿特性之探討
Fabrication of micro-hollow cathode electrode and its discharge characteristics
指導教授： 洪昭南
Hong, Chau-Nan
學位類別： 碩士
Master
系所名稱： 工學院 - 化學工程學系
Department of Chemical Engineering
論文出版年： 2006
畢業學年度： 94
語文別： 中文
論文頁數： 139
中文關鍵詞： 中空陰極 、電漿
外文關鍵詞： hollow cathode, plasma
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    • 利用低壓電漿進行由電漿加強的合成反應，材料表面改質(鍍膜，表面關能基化，蝕刻)相關的製程，必須仰賴昂貴且複雜的真空系統。但是，常壓電漿對於這些製程不僅提供無需真空系統的系統架設，而且在工業上具有處理量大，可連續操作的優點。

    微中空陰極電漿即是常壓電漿的一種，鐘擺效應是其最大的特點。本研究的目標在於微中空陰極電極製作，並以此電極產生電漿。為了要創造微中空陰極電極的孔洞，本研究利用(光)電化學蝕刻與微機電濕式製程作為蝕刻的方法。但是很遺憾地，(光)電化學蝕刻無法在矽基板上對六角形圖案蝕刻出具有垂直壁結構的電極。最終，利用微機電濕式製程得到噴嘴結構的微中空陰極電極，並以此電極產生電漿。

    The use of low pressure plasma related to the plasma enhanced synthesis and surface modification of materials (deposition, surface functionalization, etching) requires complex and expensive vacuum systems. However, atmospheric-pressure discharges offer a route to theses processes without vacuum system, and are suitable for continuous operations for mass production in industry.
    One of atmospheric-pressure discharges is micro-hollow cathode discharge (MHCD), which presents the pendulum motion. The goal of this study is to fabricate the micro-hollow cathode electrode and generate plasma. In order to fabricate MHCD holes, the (photo)electrochemical etching technique and wet bulk micromaching are used. Unfortunately, the (photo)electrochemical etching technique fails to etch silicon with hexagonal windows to produce high-aspect-ratio structures with vertical sidewalls. Finally, the micro-hollow cathode electrode with nozzle structure is fabricated by wet bulk micromaching and plasma generated by this electrode.

    中文摘要......................................................................I 英文摘要.....................................................................II 致謝........................................................................III 總目錄.......................................................................IV 圖目錄.....................................................................VIII 表目錄.....................................................................XIII 第一章 緒論...................................................................1 1-1前言.......................................................................1 1-2研究動機與目的.............................................................2 第二章 理論基礎...............................................................4 2-1電漿.......................................................................4 2-1-1自然界電漿...............................................................4 2-1-2人造電漿.................................................................5 2-1-3電漿的分類..............................................................16 2-1-4常壓冷電漿系統的發展....................................................17 2-2中空陰極放電現象(Hollow cathode discharges)...............................21 2-3多孔矽的發現..............................................................26 2-4多孔矽的形成 - 化學反應...................................................26 2-5多孔矽的形成 - 物理模型...................................................31 2-5-1 The Beale model........................................................31 2-5-2 The diffusion - limited model..........................................34 2-5-3 The quantum confinement model..........................................36 2-6 多孔矽的形成－I-V特徵曲線................................................38 2-7 矽之非等向性蝕刻(Anisotropic Etch).......................................38 第三章實驗參數與研究方法.....................................................51 3-1實驗流程..................................................................51 3-2微機電製程系統設備........................................................52 3-2-1 光罩對準機（mask aligner)..............................................52 3-2-2 旋轉塗佈機(Spin Coater)................................................53 3-2-3反應離子蝕刻機(Reactive Ion etching)....................................53 3-2-4 氧化製程...............................................................54 3-2-5 電子束蒸鍍.............................................................55 3-3（光）電化學蝕刻製程系統設備..............................................57 3-3-1 電源供應器.............................................................57 3-3-2（光）電化學蝕刻系統架設................................................58 3-4 常壓電漿系統設備.........................................................59 3-4-1 電源供應器.............................................................59 3-4-2 常壓電漿系統架設.......................................................60 3-5 實驗藥品材料.............................................................61 3-6 實驗步驟.................................................................63 3-6-1 基板前處理.............................................................63 3-6-2 黃光微影製程與電漿蝕刻.................................................63 3-6-3 電化學蝕刻.............................................................64 3-6-4 電極測試與電極製作結果分析( SEM, I-V curve)............................65 第四章 結果與討論............................................................66 4-1 n 型矽基板蝕刻...........................................................66 4-1-1蝕刻前製備..............................................................66 4-1-2光電化學蝕刻(n 型矽基板)................................................70 4-2 p型矽基板蝕刻............................................................86 4-2-2 電化學蝕刻(p 型矽基板).................................................86 4-3 微積電製程對矽基板蝕刻..................................................112 4-4 電極測試................................................................115 第五章 結論.................................................................126 第六章 參考文獻.............................................................130

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