本研究以數值方法探討快速熱處理機台內的加熱過程，模擬直徑300厘米之晶圓快速加熱10秒由300K升溫到1300K和10秒後維持定溫度的加工過程，在整個加熱過程中有許多因素使得晶圓表面溫度分佈不均勻，分別使用三環和六環之加熱燈環對晶圓加熱，分析不同數目之加熱燈對晶圓表面溫度分佈的影響，由於三環加熱燈之間的空隙過大，造成晶圓表面徑向溫度落差明顯太大，而使用六環加熱燈則能大幅改善溫度不均勻的情況。此外通入的氣體也對晶圓表面有些許熱對流作用，也是造成溫差的原因，而藉著晶圓旋轉使得腔體內部氣體跟著流動，可以使晶圓表面所受到的氣體熱對流效應均勻化，而來改善晶圓表面溫差。

最後，分別使用最小平方誤差法和基因演算法來計算下一步功率，藉由所計算出之功率來對加熱燈作調整，由於使用最小平方誤差法的調整方式有可能得到局部解，倘若要避免發生此種現象，則必需擴大搜尋範圍而造成計算時間的大幅增加。相對地，使用基因演算法便得用較少的時計算時間，求得我們所需要的全域最佳加熱燈功率組合，且由結果可發現基因演算法能有效地改善最小平方誤差法的缺點。

In this thesis, the heating process of 300 mm silicon wafer in the RTP chamber are studied numerically.
During the process, the wafer is heated by lamps from room temperature to the designated process temperature rapidly and maintain at that temperature thereafter.

The effects of three-rings and six-rings heating lamps on the temperature uniformity of the wafer are studied.
It is found that three-rings heating lamps lead to large wafer temperature variation due to the wide gap between two rings.
Least-squared errors method and Genetic Algorithm are employed to control the powers of heating lamps.
It is found that least-squared errors method may lead to local optimal combination of heating powers.
If we increase the range searching the global optimum to improve this problem, it'll spend too much time to calculate.
It's found that using Genetic Algorithm to control the powers of heating lamps can save more time searching the global optimum.

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