| 研究生: |
陳秋鎔 Chen, Chiu-Jung |
|---|---|
| 論文名稱: |
運用不同的金屬與結構於氮化鎵發光二極體以增加光取出率 Applications of Different Metals and Structures for Increase in Light Extraction on GaN-based Light Emitting Diodes |
| 指導教授: |
蘇炎坤
Su, Yan-Kuin |
| 學位類別: |
碩士 Master |
| 系所名稱: |
電機資訊學院 - 微電子工程研究所 Institute of Microelectronics |
| 論文出版年: | 2010 |
| 畢業學年度: | 98 |
| 語文別: | 英文 |
| 論文頁數: | 105 |
| 中文關鍵詞: | 無摻雜的氮化鎵 、二氧化矽 、鎳/銀/鎳/金 、鎳/銀/鎳/鉑/金 、鉻/鉑/銀 、光輸出強度 |
| 外文關鍵詞: | u-GaN, SiO2, Ni/Ag/Ni/Au, Ni/Ag/Ni/Pt/Au, Cr/Pt/Ag, light output intensity |
| 相關次數: | 點閱:145 下載:2 |
| 分享至: |
| 查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
近年來,隨著環保意識的抬頭,發光二極體在固態照明中扮演著極為重要的角色。為了要將發光二極體廣泛地運用於日常照明中,其亮度與成本問題仍是有待解決的!本論文中,分別在垂直式發光二極體與水平式發光二極體的製程上做些微的改變以增加光取出率。就垂直式發光二極體而言,做一個保護牆在反射鏡的外圍以防止在製程中的酸、鹼溶液對於反射鏡的侵蝕,進而維持反射鏡金屬的反射率及阻值,其亮度可以提升59.78%。除此之外,應用不同的製程步驟於垂直式發光二極體中以減少強酸運用於製程中的機會,將對於反射鏡傷害盡量減小。就水平式發光二極體而言,將n type及p type的電極金屬種類由Cr/Pt/Au變成Cr/Pt/Ag。以銀取代金的好處有以下三點:成本較低、在藍光發光波段之反射率較高以及電阻係數較低。這些優點使得以Cr/Pt/Ag當n type及p type電極運用於大尺寸與小尺寸的發光二極體亮度分別提升16.63%及12.32%,而順向電壓分別降低0.06伏特及0.18伏特。
With the awakening of environmental protection, light emitting diodes play an important role in the solid lighting. To employ the light emitting diodes into general lighting use, the problems that should be solved are output light intensity and cost. In this thesis, there are some methods on the fabricating process for the vertical and lateral light emitting diodes respectively to increase the light output intensity. For vertical light emitting diodes, side walls are used around reflector to prevent reflector from being deteriorated by the acid and alkaline solutions. Then, this additional protection can maintain the reflectivity and resistance of metals for reflector. The light output intensity is 59.78% higher with the light emitting diodes with the side walls as protection of reflector. Moreover, to decrease the possibility of using strong acid solutions into the fabricating process, a different fabricating procedure is applied to minimize the damage induced to the reflector. For lateral light emitting diodes, the materials of metals for n and p pads, Cr/Pt/Au, are replaced with Cr/Pt/Ag. There are three advantages for replacing gold with silver: lower cost, higher reflectivity in the spectrum of blue light, and lower resistivity. With these advantages, the light output intensities for the large-sized and small-sized light emitting diodes with Cr/Pt/Ag as n and p pads are 16.63% and 12.32% higher respectively, and the forward voltages are 0.06 volts and 0.18 volts lower.
[1]Michael S. Shur, FELLOW, IEEE, and ARTU ̅RAS Z ̌UKAUSKAS, “Solid-State Lighting: Toward Superior Illumination,” IEEE, Vol. 93, No. 10, pp. 1691-1703, October 2005
[2]Jeff Y. Tsao, “Solid-state lighting: lamps, chips, and materials for tomorrow,” IEEE Circuits & Devices magazine, Vol. 20, pp. 28-37, May 2004
[3]Arpad Bergh, George Craford, Anil Duggal, and Roland Haitz, “The Promise and Challenge of Solid-State Lighting,” Physics Today, pp. 42-47, December 2001
[4]H. J. Round, “A note on carborundum,” Electrical World, Vol. 49, pp. 309, 1907
[5]Nikolay Zheludev, “The life and times of the LED-a 100-year history,” Nature Photonics, Vol. 1, pp. 189-192, April 2007
[6]Herbert Paul Maruska “A BRIEF HISTORY OF GaN BLUE LIGHT-EMITTING DIODES”
[7]Russell D. Dupuis, and Michael R.Krames, “History, Development, and Applications of High-Brightness Visible Light-Emitting Diodes,” Journal of Lightwave Technology, Vol. 26, No. 9, pp. 1154-1171, May 2008
[8]M. R. Krames, M. Ochiai-Holcomb, G. E. Ho¨ fler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J. W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting 50% external quantum efficiency,” Appl. Phys. Lett., Vol. 75, No. 16, pp. 2365-2367, October 1999
[9]E. Fred Schubert, “Light Emitting Diodes,” Rensselaer Polytechnic Institute, Troy, New York, pp. 1-22, 2006
[10]S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, “Thermal annealing effects on p-type Mg-doped GaN films,” J. J. Appl. Phys., Vol. 31 ,Part 2, No. 2B, pp. L139-L142, February 1992
[11]H. Amano, N. Sawaki, I. Akasaki, and T. Toyoda, “Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer, ” Appl. Phys. Lett., Vol. 48, No. 5, pp. 353-355, February 1986
[12]Yukio Narukawa, Junya Narita, Takahiko Sakamoto, Kouichiro Deguchi, Takao Yamada and Takashi Mukai, “Ultra-High Efficiency White Light Emitting Diodes,” J. J. Appl. Phys., Vol. 45, No. 41, pp. L1084-L1086, October 2006
[13]Yukio Narukawa, Masahiko Sano, Takahiko Sakamoto, Takao Yamada, and Takashi Mukai, “Successful fabrication of white light emitting diodes by using extremely high external quantum efficiency blue chips,” Phys. Stat. Sol. (a), Vol. 205, No. 5, pp. 1081-1085, April 2008
[14]Takashi Miyoshi, Tomoya Yanamoto, Tokuya Kozaki, Shin-ichi Nagahama, Yukio Narukawa, Masahiko Sano, Takao Yamada and Takashi Mukai, “Recent Status of White LEDs and Nitride LDs,” Proc. of SPIE, Vol. 6894, pp. 689414, 2008
[15]Atsuo Michiue, Takashi Miyoshi, Tomoya Yanamoto, Tokuya Kozaki, Shin-ichi Nagahama, Yukio Narukawa, Masahiko Sano, Takao Yamada and Takashi Mukai, “Recent development of nitride LEDs and LDs,” Proc. of SPIE, Vol. 7216, pp. 72161Z, 2009
[16]Shuji Nakamura, Takashi Mukai, and Masayuki Senoh, “Candela‐class high‐brightness InGaN-AlGaN double‐heterostructure blue‐light‐emitting diodes,” Appl. Phys. Lett., Vol. 64, No. 13, pp. 1687-1689, March 1994
[17]S. Keller, B. P. Keller, Y. F. Wu, B. Heying, D. Kapolnek, J. S. Speck, U. K. Mishra, and S. P. DenBaars, “Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett., Vol. 68, No. 11, pp. 1525-1527, March 1996
[18]Shuji Nakamura, “GaN Growth Using GaN Buffer Layer,” J. J. Appl. Phys., Vol. 30, No. l0A, pp. L1705-L1707, October 1991
[19]H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda “Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer,” Appl. Phys. Lett., Vol. 48, No. 5, pp. 353-355, February 1986
[20]B. Beaumont, Ph. Venne ́gue ̀s, and P. Gibart, “Epitaxial Lateral Overgrowth of GaN,” Phys. Stat. Sol. (b), Vol. 227, No. 1, pp. 1-43, 2001
[21]Kazuyuki Tadatomo, Hiroaki Okagawa, Youichiro Ohuchi, Takashi Tsunekawa, Yoshiyuki Imada, Munehiro Kato, and Tsunemasa Taguchi, “High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy,” J. J. Appl. Phys., Vol. 40, No. 6B, pp. L583-L585, June 2001
[22]S.J. Chang, Y.C. Lin, Y.K. Su, C.S. Chang, T.C. Wen, S.C. Shei, J.C. Ke, C.W. Kuo, S.C. Chen, and C.H. Liu, “Nitride-based LEDs fabricated on patterned sapphire substrates,” Solid State Electronics, Vol. 47, pp. 1539-1542, 2003
[23]http://www.philipslumileds.com/
[24]S. M. Sze, “SEMICONDUCTOR DEVICES Physics and Technology, 2nd Edition,” HANDBOOK, pp. 284
[25]E. Fred Schubert, “Light Emitting Diodes,” Rensselaer Polytechnic Institute, Troy, New York, pp. 59, 2006
[26]E. Fred Schubert, “Light Emitting Diodes,” Rensselaer Polytechnic Institute, Troy, New York, pp. 70, 2006
[27]R. J. Shul, G. A. Vawter, C. G. Willison, M. M. Bridges, J. W. Lee, S. J. Peartron and C. R. Abernathy, “Comparison of plasma etch techniques for III–V nitrides,” Solid-State Electronics, Vol. 42, No. 12, pp. 2259-2267, 1998
[28]C.L. Chao, W.C. Chou, C.Y. Shi, K.J. Ma, and T.T. Chen, “Investigation of Material Removal Mechanisms Involved in ICP etching of InGaN/GaN,” J. C.C.I.T., Vol. 34, No. 2, pp. 1-6, November 2006
[29]S. Tripathy, A. Ramam, S. J. Chua, J. S. Pan, and Alfred Huan, “Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry,” J. Vac. Sci. Technol. A, Vol. 19, No. 5, pp. 2522-2532, September 2001
[30]Chao Yi Fang, Weng Jung Huang, Edward Yi Chang, Chia Feng Lin and Ming Shiann Feng, “Etching Damages on AlGaN, GaN and InGaN Caused by Hybrid Inductively Coupled Plasma Etch and Photoenhanced Chemical Wet Etch by Schottky Contact Characterizations,” J. J. Appl. Phys., Vol. 42, No. 7A, pp. 4207-4212, July 2003
[31]R.J. Shul, L. Zhang, A.G. Baca, C.G. Willison, J. Han, S.J. Pearton, K.P. Lee, F. Ren, “Inductively coupled high-density plasma-induced etch damage of GaN MESFETs,” Solid-State Electronics, Vol. 45, pp. 13-17, 2001
[32]K Remashan, S J Chua, A Ramam, S Prakash, and W Liu, “Inductively coupled plasma etching of GaN using BCl3/Cl2 chemistry and photoluminescence studies of the etched samples,” Semicond. Sci. Technol., Vol. 15, pp. 386-389, 2000
[33]W. T. Lim, I. G. Baek, P. G. Jung, J. W. Lee, G. S. Cho, J. I. Lee, K. S. Cho, and S. J. Pearton, “Investigation of GaAs Dry Etching in a Planar Inductively Coupled BCl3 Plasma,” Journal of The Electrochemical Soc., Vol. 151, No. 3, pp. G163-G166, January 2004
[34]Yan Li, Xiaoyan Yi, Xiaodong Wang, Jinxia Guo, Liangchen Wang, Guohong Wang, Fuhua Yang, Yiping Zeng, Jinmin Li, “Plasma-induced damage in GaN-based light emitting diodes,” Proc. of SPIE, Vol. 6841, pp. 68410X, 2007
[35]G. K. REEVES AND H. B. HARRISON, “Obtaining the Specific Contact Resistance from Transmission Line Model Measurements,” IEEE ELECTRON DEVICE LETTERS, Vol. 3, No. 5, pp. 111-113, May 1982
[36]H. B. Harrison, “Characterizing metal semiconductor ohmic contacts,” Proc. IREE Aust., Vol. 41, pp. 95, 1980
[37]Ja-Soon Jang, Seong-Ju Park, and Tae-Yeon Seong, “Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment,” J. Vac. Sci. Technol. B, Vol. 17, No. 6, pp. 2667-2670, November 1999
[38]Jong Kyu Kim, Jong Lam Lee, Jae Won Lee, Hyun Eoi Shin, Yong Jo Park, and Taeil Kim, “ Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment,” Appl. Phys. Lett., Vol. 73, No. 20 , pp. 2953-2955, November 1998
[39]Ja Soon Jang ,and Tae Yeon Seong, “Mechanisms for the reduction of the Schottky barrier heights of high-quality nonalloyed Pt contacts on surface-treated p-GaN,” J. Appl. Phys., Vol. 88, No. 5, pp. 3064-3066, September 2000
[40]J. S. Jang, S. J. Park, and T. Y. Seong “Effects of Surface Treatment on the Electrical Properties of Ohmic Contacts to (In)GaN for High Performance Optical Devices,” phys. stat. sol. (a), Vol. 194, No. 2, pp. 576-582, 2002
[41]Jong Lam Lee, Jong Kyu Kim, Jae Won Lee, Yong Jo Park, Taeil Kim, “Effect of surface treatment by KOH solution on ohmic contact formation of p-type GaN,” Solid-State Electronics, Vol. 43, pp. 435-438, 1999
[42]Yingwen Tang, Xue Li, Yong Kang, Xiangyang Li, Haimei Gong, “Influence of a new surface treatment method on ohmic contact resistivity of p-type GaN,” Proceedings of SPIE, Vol. 5633, pp. 401-408, 2005
[43]G. Parish, L.M. Watson, G Umana Membreno, and B.D. Nener, “Investigations of ohmic contacts to reactive-ion-etched p-type GaN,” Proc. of SPIE, Vol. 5276, pp. 47-56, 2004
[44]X. A. Cao, A. P. Zhang, G. T. Dang, F. Ren, S. J. Pearton, R. J. Shul, and L. Zhang “Schottky diode measurements of dry etch damage in n- and p-type GaN,” J. Vac. Sci. Technol. A, Vol. 18, No. 4, pp. 1144-1148, July 2000
[45]Lisheng Yu, and D. Qiao, “Comment on Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films,” J. Appl. Phys., Vol. 96, No. 8, pp. 4666-4667, October 2004
[46]Li Chien Chen, Jin Kuo Ho, Fu Rong Chen, Ji Jng Kai, Li Chang, Chang Shyang Jong, Chien C. Chiu, Chao Nien Huang, and Kwang Kuo Shih, “Effect of heat treatment on Ni/Au Ohmic contacts to p-type GaN,” phys. stat. sol. (a), Vol. 176, pp. 773-777, 1999
[47]C. Y. Hu, Z. X. Qin, Z. Z. Chen, Z. J. Yang, T. J. Yu, X. D. Hu, K. Wu, Q. J. Jia, H. H. Wang, G. Y. Zhang, “Influence of various annealing temperatures on microstructure evolution of oxidized Ni/Au ohmic contact to p-GaN studied by synchrotron X-ray diffraction” Journal of Crystal Growth, Vol. 285, pp. 333-338, 2005
[48]Ma Hong Xia, Han Yan Jun, Shentu Wei Jin, Zhang Xian Peng, and Luo Yi, “A Novel Ni/Ag/Pt Ohmic Contact to P-Type GaN for Flip-Chip Light-Emitting Diodes,” Chin. Phys. Lett., Vol. 23, No. 8, pp. 2299-2302, 2006
[49]Jun Ho Son, Gwan Ho Jung, and JongLam Lee, “Enhancement of light reflectance and thermal stability in Ag-Cu alloy contacts on p-type GaN,” Appl. Phys. Lett., Vol. 93, pp. 012102, 2008
[50]Sunjung Kim, Jun-Ho Jang, and Jeong-Soo Lee, “Thermally stable and highly reflective ITO/Ag-Based ohmic contacts to p-GaN,” Journal of The Electrochemical Society, Vol. 154, No. 11, pp. H973-H976, 2007
[51]Ja Yeon Kim, Seok In Na, Ga Young Ha, Min Ki Kwon, Il Kyu Park, Jae-Hong Lim, Seong Ju Park, Min Ho Kim, Dongyoul Choi, and Kyeongik Min “Thermally stable and highly reflective AgAl alloy for enhancing light extraction efficiency in GaN light-emitting diodes,” Appl. Phys. Lett., Vol. 88, pp. 043507, 2006
[52]Ho Gyoung Kim, Parijat Deb, and Timothy Sands, “High-reflectivity Al-Pt nanostructured Ohmic contact to p-GaN,” IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 53, No. 10, pp. 2448-2453, October, 2006
[53]Y. H. LIN, and C. Y. LIU, “Reflectivity and Abnormal Absorption at ITO/Al Interface,” Journal of ELECTRONIC MATERIALS, Vol. 38, No. 1, pp. 108-112, 2009
[54]Liann Be Chang, Ching Chuan Shiue, and Ming Jer Jeng, “High reflective p-GaN Ni/Ag/Ti/Au Ohmic contact for flip-chip light-emitting diode applications,” Applied Surface Science, Vol. 255, pp. 6155-6158, 2009
[55]M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, and M. Stutzmann, “Optical patterning of GaN films,” Appl. Phys. Lett., Vol. 69, No. 12, pp. 1749-1751, September 1996
[56]O. Ambacher, M. S. Brandt, R. Dimitrov, T. Metzger, M. Stutzmann, R. A. Fischer, A. Miehr, A. Bergmaier and G. Dollinger, “Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition,” J. Vac. Sci. Technol. B, Vol. 14, No. 6, pp. 3