本論文我們主要的研究方向是利用化學氣相沉積法來製備β-FeSi2奈米線並探討二矽化鐵奈米線的成長機制和性質。
為了能夠了解二矽化鐵奈米線生成之因素，我們將實驗過程分別以實驗溫度、氣體流量、持溫時間等因素來討論，我們可以發現在實驗溫度650℃上時開始慢慢有奈米線的生成，直到950℃時顆粒取代奈米線，並且隨著溫度的提高，奈米線長度越長半徑越小。在氣體流量方面，我們以氣體流量50sccm為最佳氣體流量，氣體流量越高時發現奈米線生成數量越少，並且當流量低於50sccm時會有不同相的出現。持溫時間方面發現當持溫時間越久奈米線的長度也越長。
在性質方面，β-FeSi2在PL紅外光光譜的測試下可以發現在1380nm峰值，可以用來當作發光二極體的應用上。β-FeSi2在磁性上因為不同維度有不同的性質產生，在塊材為無磁性，薄膜在100K以下時才有鐵磁性，β-FeSi2奈米線在本實驗中磁性分析中，發現有室溫鐵磁性的性質。在場發量測上，β-FeSi2有良好的場發特性，可以用來做場發射材料。

In this study, self-catalyzed β-FeSi2 nanowires were synthesized via chemical vapor deposition method where the fabrication of β-FeSi2 nanowires occurred on Si(100) substrates through the decomposition of the single-source precursor of anhydrous FeCl3 powders. We carefully varied temperatures, duration time and the flow rates of carrier gases to control and investigate the growth of the nanowires. we can find that β-FeSi2 nanowires grow at about 750 ℃~ 850 ℃ and they are longer and thinner with increasing temperature . The number of nanowires was found fewer at higher gas flow rate, and the flow is less than 50sccm may have different phases appear. It is found that the longer duration time makes longer nanowires.
β-FeSi2 in the PL IR spectra test can be found that there is a peak at 1380nm, it can be used as a light-emitting diode applications.The magnetism of β-FeSi2 nanowires is interesting as the result of various dimensions with different futures. β-FeSi2 bulk is non-magnetic,thin film ferromagnetic only below 100K, and in the magnetic analysis , there are room temperature ferromagnetic properties at the β-FeSi2 nanowires. In the field emission measurements, β-FeSi2 were good field emission materials.

[1] Alivisatos, A. P. Science , 271, 933-937.(1996)
[2] R. P. Feynman.In California Institute of Technology .(1960)
[3] Drexler, K.E. the Coming Era of Nanotechnology, in Anchor Press .(1989)
[4] Leiber.C.M. Sci Am,285(3):p.58-64.(2001)
[5] 王崇仁，淺談奈米科學，科學發展，354期。(2002)
[6] Meindle, J.D., Q. Chen. and J.A. Davis, Science,293(5537):p. 2004-9.(2001)
[7] 朱梓華，朱濤，劉忠範。物理化學學報，15(11):966.(1999)
[8] 瓦列里，楊曉英，郭小平等。全國第二屆奈米材料和技術應用會議論文集，中國材料研究學會。杭州(2001)
[9] 姜繼森，高濂等。物理化學學報，16(4):312.(2000)
[10] 張昕彤，莊家騏，任玉林等。物理化學學報，16(7):636.(2000)
[11] 曹茂盛，楊緒文，林振隆。奈米材料導論(2000)
[12] 徐國財，張立德 編著。奈米複合材料，臺北:五南(2004)
[13] 于江波，原曦明，張立德。96中國材料研討會。162.(1996)
[14] S. Furakawa, T. Miyasato, Phys. Rev. B, 38, 5726(1988)
[15] 伊邦耀，奈米時代，臺北:五南(2002)
[16] 歐忠文，徐濱士，丁培道等。材料導報，14(11):28.(2000)
[17] H. V. Kanel, N. Onda, H. Sirringhaus, E. Mullergubler, S.Goncalvesconto,C. Schwarz. Appl. Surf. Sci, Vol. 70/71, pp. 559-561.(1993)
[18] J. Desimoni, H. Bernas, M. Behar, X. W. Lin, S. Washburn, Z.
Lilientalweber. Appl. Phys. Lett, Vol.62, pp. 306-308.(1993)
[19] J. Alvarez, J. J. Hinarejos, E. G. Michel, R. Miranda. Surf. Sci,Vol. 287, pp. 490-494.(1993)
[20] N. E. Christensen. Phys. Rev. B, Vol.42, pp. 7148-7153.(1990)
[21] Yang, Z., et al. Journal of Applied Physics,78(3): p. 1958-1963.(1995)
[22] Eppenga, R. Journal of Applied Physics, 68(6): p. 3027-3029.(1990)
[23] Dimitriadis, C.A., et al. Journal of Applied Physics, 68(4): p.1726-1734. (1990)
[24] Bost, M.C. and J.E. Mahan. Journal of Applied Physics, 64(4): p.034-2037. (1988)
[25] Arushanov, E., et al. Physical Review B, 52(1): p. 20-23.(1995)
[26] Miya, T., et al. Electronics Letters,15(4): p. 106-108.(1979)
[27] Katsumata, H., et al. Journal of Applied Physics, 80(10): p. 5955-5962. (1996)
[28] Katsumata, H., et al. Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers. 36(5A): p.2802-2812.(1997)
[29] M. Libezny, J.P., T. Vermeulen, J. Nijs, P. H. Amesz, K. Herz, and M. Powalla.(1995)
[30] M. Libezny, J.P., T. Vermeulen, J. Nijs, P. H. Amesz, K. Herz, and M. Powalla, in Proc p. 1326.(1995)
[31] Riffel, M., E. Gross, and U. Stohrer. Journal of Materials Science-Materials in Electronics. 6(3): p. 182-185.(1995)
[32] P. Lengsfeld, S. Brehme, G. Ehlers, H. Lange, N. Stusser, Y. Tomm
and W. Fuhs, Phys. Rev. B: Condens. Matter, 58, 16154.(1998)
[33] D. Leong, M. Harry, K. J. Reeson, K. P. Homewood. NATURE. Vol.387, pp. 686-688.(1997)
[34] T. Suemasu, Y. Negishi, K. Takakura, F. Hasegawa. Jpn. J. Appl. Phys. Vol. 39, pp. 1013-1015.(2000)
[35] Seo, K.; Varadwaj, K. S. K.; Mohanty, P.; Lee, S.; Jo, Y.; Jung, M. H.; Kim, J.; Kim, B. Nano Lett .7, 1240-1245.(2007)
[36] Xiang, B.; Wang, Q. X.; Wang, Z.; Zhang, X. Z.; Liu, L. Q.; Xu, J.; Yu, D. P. Appl. Phys. Lett. 86, 243103-1-3.(2005)
[37] Szczech, J. R.; Schmitt, A. L.; Bierman, M. J.; Jin, S. Chem. Mater. 19, 3238-3243.(2007)
[38] Lian, O. Y.; Thrall, E. S.; Deshmukh, M. M.; Park, H. Adv. Mater.18, 1437-1440.(2006)
[39] Schmitt, A. L.; Bierman, M. J.; Schmeisser, D.; Himpsel, F. J.; Jin, S., Nano Lett.6, 1617-1621.(2006)
[40] A. M. Morales and C. M. Lieber, Science279, 208.(1998)
[41] W. G. Moffatt,Genium,Schenectady, NY.(1976)
[42] Zhu, Y.Q., et al. Journal of Materials Chemistry. 8(8): p. 1859-1864.(1998)
[43] Liu, Z.Q., et al. Journal of Materials Research. 16(3): p. 683-686.(2001)
[44] Linards Skuja *. Journal of Non-Crystalline Solids.(1998)
[45] Choi, Y.C., et al. Advanced Materials. 12(10): p. 746.(2000)
[46] T.J. Trentler, K. M. Hickman, S. C. Goel, A.M. Viano, P. C. Gibbons and
W. E. Buhro, Science 270, 1791 .(1995)
[47] Younan Xia,Peidong Yang ,Adv.Mater. 15, 353.(2003)
[48] Z. W. Pan, Z. R. Dai, Z. L. Wang. Vol. 291, pp. 1947-1949.(2001)
[49] Y. Qin, X. D. Wang, Z. L. Wang. Nature. Vol. 451, pp. 809-U5.(2008)
[50] Z. L. Wang. Materials Today. Vol. 10, pp. 20-28.(2007)
[51] Z. L. Wang. Adv. Mater. Vol. 19, pp. 889-892.(2007)
[52] P. X. Gao, J. H. Song, J. Liu, Z. L. Wang. Adv. Mater. Vol. 19, pp. 67–72.(2007)
[53] Z. L. Wang, J. H. Song. Science. Vol. 312, pp. 242-246.(2006)
[54] X. D. Wang, J. Zhou, J. H. Song, J. Liu, N. S. Xu, Z. L.Wang. Vol. 6, pp. 2768-2772.(2006)
[55] J. H. Song, J. Zhou, Z. L. Wang. Nano. Lett. Vol. 6, pp. 1656-1662.(2006)
[56] B. A. Buchine, W. L. Hughes, F. L. Degertekin, Z. L. Wang. Nano. Lett. Vol. 6, pp.1155-1159.(2006)
[57] Z. L. Wang. Phys.-Consens. Mat. Vol. 16, pp. R829-R858.(2004)
[58] Z. R. Dai, Z. W. Pan, Z. L. Wang. Vol. 118, pp. 351-354.(2001)
[59] Y. Huang, S. L. Yue, Z. L. Wang, Q. Wang, C. Y. Shi, Z. Xu, X. D. Bai, C. C.Tang, C. Z. Gu,J. Phys. Chem. B.Vol. 110, pp. 796-800.(2006)
[60] P. Yang and C.M. Lieber, J. Mater. Res. 12, 2981.(1997)
[61] Y. F. Zhang, Y. H. Tang, C. Lam, N. Wang, C. S. Lee, I. Bello, S. T. Lee, J. Cryst.Growth, 212, 115.(2000)
[62] Y. H. Tang, Y. F. Zhang, H. Y. Peng, N. Wang, C. S. Lee and S. T. Lee, Chemical Physics Letters,314(1-2), 16-20, 26.(1999)
[63] Y. F. Zhang, Y. H. Tang, C. Lam, N. Wang, C. S. Lee, I. Bello and S. T. Lee, Journal of Crystal Growth, 212(1-2), 115-118.(2000)
[64] S. T. Lee, N. Wang and C. S. Lee, Materials Science and Engineering A, 286(1), 16-23, 30 .(2000)
[65] C. P. Li, X. H. Sun, N. B. Wong, C. S. Lee, S. T. Lee and Boon K. Teo, Chemical Physics Letters,365(1-2), 22-26, 28 .(2002)
[66] S.T. Lee, N. Wang, Y.F. Zhang, Y.H. Tang, MRS Bulletin 24 (8): 36-42 .(1999)
[67] S.T. Lee, Y.F. Zhang, N. Wang, Y.H. Tang, I. Bello, C.S. Lee, Y.W. Chung Journal Of Materials Research 14 (12): 4503-4507.(1999)
[68] R.Q. Zhang, Y. Lifshitz Y, S.T. Lee, Advanced Materials 15 (7-8):
635-640.(2003)
[69] J. Jorritsma, M.A.M. Gijs, J.M. Kcrkhof, J.G..H. Sticncn, Nanotechnology , 7, 263.(1996)
[70] E.Kapon, K. Kash, E. M. Clausen Jr.,D.M.Hwang, E.Colas, Phys.Lett,60, 477.(1992)
[71] J. C. Hultccn, C. R. Martin, J. Mate. Chem. 7, 1075.(1997)
[72] Z. H. Lan, C. H. Liang, C. W. Hsu , C. T. Wu , H. M. Lin , S. Dhara , K. H. Chen, L. C. Chen , C. C. Chen. Adv. Funct. Mater. Vol. 14, pp. 233-237.(2004)
[73] X. F. Duan, Y. Huang, Y. Cui, et al. Vol. 409, pp. 66-69.(2001)
[74] Y. Cui, C. M. Lieber. Vol. 291, pp. 851-853.(2001)
[75] Y. Cui, L. J. Lauhon, M. S. Gudiksen, et al. Appl. Phys. Lett. Vol. 78, pp. 2214-2216.(2001)
[76] Y. Cui, X. F. Duan, J. T. Hu, et al. , J. Phys. Chem. B., Vol. 104, pp. 5213-5216.(2000)
[77] Z. W. Pan, Z. R. Dai, Z. L. Wang, Science, Vol. 291, pp. 1947-1949.(2001)
[78] 2000 - 2013 Dow Corning Corporation http://www.dowcorning.com/content/etronics/etronicschem/etronics_newcvd_tutorial3.asp.
[79] 張福榮、張立,科儀新知，16 (4),4.(1995)
[80] 陳力俊等著，材料電子顯微鏡學，行政院國科會精密儀器發展中心，p.1~20、p.49~50、p.251~285.(1990)
[81] L.Ratke P.W.Voorhees,New York,pp117-124.(2002)
[82] J Johansson, CPT Svensson, T Martensson, L Samuelson, and W Seifert, J. Phys. Chem. B., 109(28):13567-13571.(2005)
[83] C. H. J. V. Brekel,Phips Res. Repts, 32 118.(1977)
[84] D. S. Rickerby and A. Matthews, Chapman and Hall, New York,
pp.179-183.(1991)
[85] K.H. Tan, D.Z. Chi, and K.L.Pey, Journal of Applied Physics 104: 064117(2008).
[86] M.C. Bost, Mahan John E, J Appl.Phys,64: 4(1988).
[87] Y. Y. Chen, P. C. Lee C. B. Tsai, and S. Neeleshwar, J. Appl. Phys., 91, 251907.(2007)
[88] O. Valassiades, C. A. Dimitriadis and J. H. Werner, J. Appl. Phys.,
70, 890.(1991)
[89] K. S. K. Varadwaj, Kwanyong Seo, Paritosh Mohanty, Sunghun Lee,nanoletters, Vol. 7, No. 5 1240-1245.(2007)
[90] Nitin Bagkar, Kwanyong Seo,† Hana Yoon, Juneho In,Younghoon Jo, and Bongsoo Kim*, Chem. Mater., 22, 1831–1835 1831 DOI:10.1021.(2010)