除了濺鍍參數之外，近年來越來越多研究指出靶材的特性會影響到濺鍍過程與薄膜性質，然而這三者之間的關聯性卻尚未被完整建立。因此本論文主要目的為研究靶材的微結構、成分與含氧量等性質對於濺鍍行為與薄膜特性的影響。本研究選擇四種不同靶材材料與其薄膜應用分別做探討，Part-1為熱壓法製備之Cr-Ti-Cu靶材微結構與其薄膜特性之研究（垂直記錄媒體-附著層）；Part-2 為W與Cu的添加對於Ni-W-Cu合金靶材與薄膜特性之影響（垂直記錄媒體-種子層）；Part-3 為不同粉末冶金法製備之Al-Cr靶材與其濺鍍行為之研究（車削刀具-硬質鍍層）；Part-4 為電漿火花燒結搭配熱均壓製備之Ta靶材與其薄膜特性之研究（半導體-擴散阻障層）。上述四個不同應用主題反應出相同的結果，指出靶材性質不佳包含密度過低、含氧量過高，強度過差與脆性介金屬化合物過多等，均會導致濺鍍過程中不穩定電弧（Arcing）與粒子（Particle）的產生，進而影響到薄膜的均勻性。此外，靶材品質提升後，薄膜表現上也會同步獲得改善，包含電阻率、本質應力、表面粗糙度、晶粒尺寸與成份變異性等薄膜特性。綜合上述結果可得知，除了昔知的機台設備與鍍膜參數等因子外，靶材的優劣亦會強烈影響到濺鍍過程的穩定性與薄膜品質。

The properties of sputtering targets have recently been found to affect the performances of sputtered films and the sputtering process. However, the correlations between them have not been well established. The purpose of this study is to investigate the influences of microstructure, composition and oxygen content of the targets on sputtering behavior and film properties. The experiments would be divided into four parts for detail discussion. The 1st part is the microstructures of hot-pressed Cr-Ti-Cu targets and their film properties for perpendicular magnetic recording application; the 2nd part is the effects of W and Cu on the microstructure of Ni-W-Cu seed layer in perpendicular magnetic recording; the 3rd part is the investigation of Al-Cr alloy targets sintered by various powder metallurgy methods and their particle generation behaviors in sputtering process; the 4th part is the investigation of Ta targets sintered by spark plasma sintering combined with hot isostatic pressing and their sputtering performance. All the topics showed the same tendency, the relationship between the target properties and the film performances indicated that the arcing behavior, particle generation and film uniformity were obviously correlated with inferior sputtering targets, which had low density, micro cracks from brittle IMCs. In addition, the films deposited from improved targets also showed the advantages on resistivity, intrinsic stress and surface roughness, grain size, composition deviation, etc. The overall results strongly reveal that target quality has significant effects on sputtering performance.

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