本論文主要研究應用於Ku至Ka頻段 (12-40GHz) 之射頻收發機電路元件，首先使用TSMC 90nm CMOS製程研製一個具有除四及正交相位輸出的再生式除頻器，本次設計是使用了次諧波混頻器、中央抽頭變壓器及源極注入CML除二電路，形成一再生式除頻器架構。由變壓器設計的源極注入CML電路，可改善傳統差動注入CML的高頻雜散電容效應，提高注入功率與操作頻寬，提升再生式除頻器的鎖頻範圍，不須再使用級間buffer，節省除頻器功耗與面積。量測後的鎖頻範圍為20.1-24.8GHz，核心電路的消耗功率為13.7mW，晶片面積為0.69 × 0.85 mm2。
第二部分為使用正交注入式CML的除三再生式除頻器與除五再生式除頻器的研製。其架構為使用兩組Gilbert Mixer與帶通濾波器並結合正交注入式的CML電路，來實現兩顆具有高除數、寬鎖頻範圍以及正交輸入正交輸出功能的再生式除頻器。與傳統差動注入式CML比較，運用正交注入式CML電路，能有效改善再生式除頻器的鎖頻範圍，並應用於正交鎖相迴路。關於除三與除五的除頻器量測結果顯示，核心電路消耗功率分別為10.73mW/ 14.8mW，且擁有12.5-23GHz (59%) / 7.2-19GHz (90%)的超寬鎖頻範圍及高達52.3/ 133.5的FOM值。
第三部分為一個新的相位抵消式可調式衰減器，架構上使用了Lange Coupler、反射型相移器(RTPS)以及Wilkinson Power Combiner，使用相位合成抵消的方式來作功率的衰減，研製一可調式衰減器。本次設計架構並非直接使用主被動元件來衰減功率，能夠降低元件的高頻寄生效應，改善操作頻率以及頻寬，並能有低的功率損失和寬廣的衰減範圍。此電路量測的操作頻寬為30-40GHz，可調的衰減量為4.5-23.7dB之間，範圍約為19.2dB，在操作頻寬下的反射損失皆大於10dB。
第四部分為提出新式諧波增強技術的超低功耗五倍頻器。架構為使用一組交叉耦合電晶體對與次諧波混頻器作疊接而成，此次創新概念使用交叉耦合對來提供迴路增益可有效增強高次諧波功率，解決高倍數倍頻器因高次諧波訊號功率過小而難以實現的問題，此外架構上同時使用電流共用技術以降低核心電路功耗。經由模擬，本次設計的倍頻器具有五倍的高倍數、23-27.5GHz的操作頻寬、大於20dB的諧波抑制能力、以及低達0.18mW的超低功耗。

The main research of this thesis is for the application of RF receiver circuit in Ku-Ka band. First, a divide-by-4 regenerative frequency divider (RFD) with quadrature outputs is implemented in TSMC 90 nm CMOS process. The structure which uses feedback to combine sub-harmonic mixer, center-tap transformer, and source-injection current-mode-logic (CML) circuit becomes a regenerative divider. The source-injection CML circuit can improve the parasitic effects of the conventional differential CML circuit which operate in high frequency to increase the injection power of the CML and to operate in high frequency. Therefore, the design has wide locking range and need no inter-stage buffer, so it can save power consumption and chip area. The core circuit consumes 13.7mW, the locking range is 20.1-24.8 GHz, and the chip size is 0.69 x 0.85 mm2.
The second part of this thesis presents a divide-by-3 and a divide-by-5 regenerative frequency divider which use quadrature-injection CML to implement by TSMC 90 nm CMOS process. The architecture consists of two Gilbert mixers, two bandpass filters, and quadrature-injection CML to realize two frequency divider with high division number, wide locking range, and the function of quadrature inputs and outputs. Compared with traditional differential-injection CML, the locking range of quadrature-injection CML is improved extensively. Furthermore, the proposed divider can use in quadrature phase-locked loop. The power consumption of the measured divide-by-3 divider and the measured divide-by-5 divider is 10.73mW and 14.8mW, the locking range is 12.5-23GHz (59%) and 7.2-19GHz (90%), and the FOM is up to 52.3 and 133.5.
The third part used 0.25-μm GaN pHEMT process to demonstrate a fixed-phase variable attenuator with novel phase-cancellation technique. The circuit with phase-cancellation technique constitutes by Lange coupler, reflective type phase shifter, and Wilkinson power combiner to control power level and achieve a variable attenuator. The new structure avoided signal power passing through the dissipative devices, so it can reduce the parasitic effects of the devices. Therefore, it has low power loss, wide operation range, and good attenuation range. The measured bandwidth is 30-40 GHz, the attenuation range is about 19.2dB from 4.5-23.7dB, and the return loss at operation bandwidth is larger than 10 dB.
The fourth part proposed an ultra-low-power quintupler with novel harmonic-enhanced technique by TSMC 90 nm CMOS process. The circuit combines a sub-harmonic mixer and a cross-coupled pair transistor to generate a five times frequency signal. The new idea is that by using the cross-coupled pair transistor to provide circuit loop gain can enhance the high-order harmonic power and solves the high-order harmonic power is too small to realize high multiply number. In addition, the circuit also uses current-reuse technique to reduce power consumption. By simulation, this quintupler has as five times as high multiply number, the operation range is 23-27.5GHz , the harmonic suppression is larger than 20 dB, and the power is low down to 0.18mW.

Chapter 1
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Chapter 4
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Chapter 5
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