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研究生: 林然博
Lin, Ran-Po
論文名稱: 有參雜單層石墨烯,矽,鍺電子激發譜
Electronic excitations of monolayer doped graphene , silicene and germanium
指導教授: 林明發
Lin, Min-Fa
學位類別: 碩士
Master
系所名稱: 理學院 - 物理學系
Department of Physics
論文出版年: 2015
畢業學年度: 103
語文別: 中文
論文頁數: 38
中文關鍵詞: 石墨烯電子激發參雜
外文關鍵詞: silicene, germanium, graphene, electronic excitations, doped
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  • 本文使用緊束縛模型以及自洽理論計算單層有參雜矽,鍺,石墨烯的能帶結構和能帶激發。

    激發能譜的特性由能帶中的費米能,結構,轉移動量所影響。藉由參雜可以感應出自由載子,而自由載子在激發譜會導致帶內躍遷的產生。

    而本文使用的材料單層矽和鍺就跟石墨烯之於石墨類似,是單層的矽原子晶體結
    構並且有些許的彎曲,晶體結構是蜂巢狀,但和石墨稀最大的不同在於,單層矽和
    鍺彎曲結構會產生自旋軌道耦合效應,而此效應會產生約微小的能隙,而石墨烯
    依然維持著平坦對應結構,能隙依然為零。

    We calculate the energy dispersions and the electronic excitations of doped monolayer silicene , germanium and graphene by using the generlized tight-binding model and self-consistent theorem.
    Monolayer silicene and germanium , with the slightly buckled honeycomb geometric structures , have a small band gap which are opened by spin-orbital effect.
    On the other hand , monolayer graphene possesses the flat honeycomb structure
    with zero-gap energy bands.
    The features of excitation spectra are dominated by the Fermi energy , the band structure and the transferred momentum, doping would induce free carriers, which further cause the intraband single-particle and collective excitations. Moreover , the
    plasmons (collective excitations) are strongly dependent in the free carriers.

    誌謝………………………………………………………………………I 中文摘要………………………………………………………………...II 英文摘要……………………………………………………………….III 目錄……………………………………………………………………..VI 表目錄…………………………………………………………………VII 圖目錄………………………………………………………..……….VIII 第一章 緒論………………………………………………………..…..1 第二章 緊束縛模型………………………………………………........2 第三章 自洽理論…………………………………………………........8 第四章 能帶以及自旋軌道耦合效應…………………………..........15 第五章 電子激發能譜…………………………………………………21 第六章 結論………………………………………………………........37 參考文獻……………………………………………………………......38

    1. Behnaz Gharekhanlou and Sina Khorasani , Nova Science Publishers, Inc(2011)

    2 . P.R.Wallcae. phys . Rev. 71. 622 (1947)

    3 . Rafael Roldan , Instituto de Ciencia de Materiales de Madrid CSIC (2012)
    4 . A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K. Geim .Rev. Mod. Phys. 81, 109 – Published 14 January (2009)
    5 . C. W. Chiu, S. H. Lee, S. C. Chen, and M. F. Lin .Journal of Applied Physics 106, 113711 (2009)

    6 . Ming-Fa Lin and Feng-Lin Shyu , Journal of the Physical Society of Japan
    Vol. 69, No. 2 (2000)

    7 . Cheng-Cheng Liu, Hua Jiang, and Yugui Yao , PHYSICAL REVIEW B 84, 195430 (2011)

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