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研究生：	鄭茂川 Zheng, Mao-Chuan
論文名稱：	使用準分子雷射於鑽石膜的平坦化研究 Planarization study of diamond films using excimer laser technology
指導教授：	林仁輝 Lin, Jen-Fin
學位類別：	碩士 Master
系所名稱：	工學院 - 機械工程學系 Department of Mechanical Engineering
論文出版年：	2003
畢業學年度：	91
語文別：	中文
論文頁數：	222
中文關鍵詞：	準分子雷射、鑽石膜、平坦化、拋光
外文關鍵詞：	excimer laser, diamond film, planarization, polishing
相關次數：	點閱：115 下載：1
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　　鑽石因為具有硬度最大、散熱最快、透光範圍廣和耐腐蝕等特性，長久以來一直是工程上重要的材料之一。而發明使用化學氣相沉積法(chemical vapor deposition, CVD)鍍製的多晶鑽石膜亦保有和天然單晶鑽石差不多的特性，也開始被大量生產打算廣為使用。然而因為熱燈絲法(hot filament method)鍍製的CVD鑽石膜，其表面相當粗糙，這將限制鑽石膜的使用範圍，而無法順利將其許多獨特的材料特性發揮出來。有鑑於此，陸續開發鑽石膜的平坦化技術，希望能降低鑽石膜表面的粗糙度。在這些平坦化技術當中，以準分子雷射拋光是最具潛力的技術，因為它有著快速且有效的優點。於是本論文即以KrF準分子雷射當作平坦化鑽石膜的工具，配合不同的雷射能量及掃描次數，探討鑽石膜經雷射照射加工前後的表面粗糙度變化結果和表面非均勻度變化結果優劣，整理歸納將作為對大面積鑽石膜試片加工的參考依據。另外，建立雷射導致表面溫升理論，預測在不同的雷射能量照射和加工方式下將產生的表面溫度值，並由鑽石材料在此高溫中將發生的反應來瞭解雷射燒蝕破壞鑽石膜的機制。得知鑽石材料在1500K會先發生石墨化反應而轉變為石墨結構，石墨在超過4000K高溫的環境中會直接昇華，最後達到雷射燒蝕破壞鑽石膜的反應。同時，建立單發雷射燒蝕鑽石膜的平均材料移除率理論並配合實驗結果驗証，得到從1.8J/cm2~3.0J/cm2的雷射能量密度下，其平均移除率分別約為2.2nm/pulse~23nm/pulse，這樣的微小移除量使得KrF準分子雷射很適合對鑽石膜進行微細加工，並由移除率的預測將可控制雷射燒蝕鑽石膜的量。
　　在進行雷射燒蝕鑽石膜實驗的前後，須對鑽石膜作各種檢測分析。本實驗中利用了X光繞射儀、拉曼光譜儀、掃描式電子顯微鏡、原子力顯微鏡和三維粗度儀等設備來記錄並比較這些試片在加工前後的材料特性結果。
　　由實驗結果得知，在低雷射能量密度時不論加工時間長短，所得的加工效果較穩定。反倒是在高雷射能量照射下，雖然有較高的材料移除量，但容易因加工時間過長，而破壞待加工區域的表面平整，造成粗糙度的增加。也因為雷射加工是屬於非接觸式的加工，所以待加工表面經雷射燒蝕前後的翹曲趨勢是差不多的，這也意味著在這燒蝕區域上各點的雷射燒蝕量是相同的。而因為雷射加工是平坦化鑽石膜的粗加工技術，故在被照射過的鑽石膜上存在一層約為6~116nm厚的石墨。這個值可由理論結果得到，並由Raman光譜結果獲得初步驗証。

　　Diamond film is one of the most important materials in engineering by its properties of the largest hardness, fast speed of thermal conduction, broad range of optical transmitivity and corrosion proof. Polycrystal diamond films deposited by CVD (chemical vapor deposition) method also have the same properties of natural singlecrystal diamonds, being manufactured for the large amount applications. Because the diamond films deposited by hot filament CVD have very rough surface, this will limit its applications for the special properties. That’s the reason of creating new planarization techniques, in order to minimize the surface roughness. In these planarization techniques, excimer laser of the most potential one with its advantage for fast and efficient. In this study we use KrF excimer laser as the tool for polishing diamond films with different laser energies and scanning numbers, thus we have the results of surface roughness and nonuniformity variation due to the original surfaces and laser irradiated surfaces and among the results we can choose the appropriate machining parameters for polishing large area diamond films. On the other hand, with the laser induced surface temperature rise model, we can understand the mechanisms of laser ablation on diamond films at high temperatures by predicting the surface temperatures generated at different laser energies. Knowing that diamond will first transform into graphite at 1500K as the graphitization and subsequent the graphite will sublimate at 4000K, thus achieving laser ablation of diamond films. At the same time we propose the average material removal rate by single laser pulse and conducted it by experimental results, then obtain the average removal rate about 2.2nm/pulse~23nm/pulse at laser fluence 1.8J/cm2~3.0J/cm2. The small removal rate makes KrF excimer laser very appropriate in micromachining of diamond films and controls the laser ablation amount of diamond films by predicting removal rate.
　　Before processing laser ablation experiments we have several properties testing analyses. In this experiment XRD, Raman spectroscopy, SEM, AFM and 3D stylus profilometry are involved to record and compare the results from before and after the experiment datas.
　　From the results, at low laser fluence we can obtain the steady machining effects no matter how long the machining time is. On the other hand, higher laser fluence irradiation can induced higher removal rate, it will destroy the machined surface flatness and increase surface roughness by much longer machining time. Also because laser machining is a non-contact technique, the surface nonuniformity remains the same when before and after laser ablation, meaning that every point on the irradiated area has the same ablation amount. Taking laser machining diamond films as the rough technique it would product a thin 6~116nm graphite layer on diamond films, this theoretical thickness can be first examined by Raman spectroscopy results.

頁次
中文摘要........................................................i
英文摘要......................................................iii
誌謝............................................................v
目錄...........................................................vi
表目錄..........................................................x
圖目錄.........................................................xi
符號表......................................................xviii
第一章	緒論.................................................1
1-1	前言....................................................1
1-2	文獻回顧................................................3
1-3	研究目的及理論分析和實驗內容............................7
第二章	基本理論............................................16
2-1	鑽石膜的構造...........................................16
2-1-1	碳原子如何構成鑽石.....................................16
2-1-2	鑽石膜的形成...........................................19
2-2　KrF準分子雷射.............................................21
2-2-1　雷射的發生機制..........................................21
2-2-2　準分子雷射的工作原理....................................23
2-2-3　準分子雷射的特性........................................26
2-3　雷射光和材料的交互作用....................................28
2-3-1　光和物質的交互作用......................................28
2-3-2　發生吸收和釋放能量的條件................................31
2-3-3　鑽石材料對雷射光的吸收..................................34
   2-3-3.1　缺陷結構對雷射燒蝕的幫助...........................35
2-3-3.2　激態電子的能量和動量轉換..............................39
2-4　雷射照射材料產生熱傳問題的理論建立........................40
2-4-1　移動體熱源導致材料表面溫度上升的理論建立................41
2-4-2　靜止體熱源導致材料表面溫度上升的理論建立................48
2-5　KrF準分子雷射照射在鑽石膜上的燒蝕反應.....................50
2-5-1　雷射光平坦化鑽石膜的機制................................50
2-5-2　雷射燒蝕鑽石膜的移除率模型建立..........................51
2-5-3　雷射能量對燒蝕反應的貢獻................................52
第三章	實驗方法及步驟......................................73
3-1　實驗目的..................................................73
3-2　鑽石膜的前處理檢測分析....................................74
3-2-1　X光繞射分析.............................................74
3-2-2　拉曼光譜分析............................................74
3-2-3掃描式電子顯微鏡分析......................................75
3-2-4　原子力顯微鏡分析........................................76
3-2-5　三維表面微細形貌量測儀..................................77
3-3　KrF準分子雷射平坦化鑽石膜的實驗步驟.......................78
第四章	結果與討論..........................................91
4-1　前處理檢測分析結果........................................91
4-1-1　XRD.....................................................91
  4-1-2　Raman spectroscopy....................................91
  4-1-3　SEM...................................................92
  4-1-4　AFM...................................................93
  4-1-5　3D stylus profilometry................................94
4-2　準分子雷射照射在鑽石膜表面導致的溫度上升模擬結果..........96
4-2-1　掃描燒蝕溫度上升模擬結果................................96
4-2-2　定點燒蝕溫度上升模擬結果................................99
4-3　雷射燒蝕鑽石膜的移除率理論和實驗結果的驗証...............100
4-3-1　雷射能量對移除率的影響.................................100
4-3-2　雷射加工時間對移除率的影響.............................101
4-4　準分子雷射平坦化鑽石膜的粗糙度變化結果...................103
4-4-1　粗糙度Ra, Rmax, Rz值的定義.............................103
4-4-2　鑽石膜經掃描照射平坦化後的粗糙度變化結果...............104
4-4-3　鑽石膜經定點照射平坦化後的粗糙度變化結果...............106
4-5　雷射燒蝕鑽石膜表面的非均勻度結果.........................107
4-5-1　非均勻度的估算方式.....................................107
4-5-2　雷射掃描照射鑽石膜的非均勻度結果.......................108
4-6　單發雷射能量在燒蝕反應中的作用結果.......................110
4-7　利用準分子雷射對大面積鑽石膜試片進行平坦化加工結果.......112
第五章	結論與建議.........................................206
5-1　結論.....................................................206
    5-2　建議.................................................208
參考文獻......................................................209
附錄..........................................................212
附錄A　將週期脈衝式雷射以傅利葉級數(Fourier series)表示.......213
附錄B　使用高斯積分(Gaussian quadrature)數值方法於多重積分計算
       .......................................................215
附錄C　利用陰影疊紋法於表面形貌量測之原理.....................221
                                    

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