本論文的主要目的是希望藉由非真空製程之溶劑浴熱法與放電紡絲法來製備薄膜太陽電池吸光奈米材料，在溶劑浴熱法與放電紡絲法環境中，藉由分子自組裝的機制，配合各種不同溶劑或不同反應條件，提供一個反應途徑來生成吸光奈米材料，將所製備的吸光奈米材料製備成單層薄膜，並將其堆疊成薄膜太陽能電池。
因此基於此推論，本研究首先以氯化亞銅、氯化銦、氯化鎵、硒粉與PVB高分子為前驅物，在氮氣氛圍中依適當的比例加入無水乙醇進行攪拌數小時。藉由放電紡絲法成功製備出PVB/Cu (InxGa1-x) Se2 複合奈米纖維，再經由熱處理將高分子分解而形成黃銅礦相的Cu (InxGa1-x) Se2 奈米纖維，並依此途徑製備出另ㄧ替代性吸光層材料Cu (InxGa1-x) S2 奈米纖維，進而探討奈米材料的型態、結晶性、熱行為、組成比例、光電性質與反應機制。利用簡易、低製備成本的放電紡絲法合成半導體奈米纖維材料為吸光層，其堆疊成薄膜太陽能電池轉換效率可達1.96 %。
另外，本論文也以氯化銅、氯化銦、氧化硼、硒粉為前驅物，在氮氣氛圍中依適當的比例與二乙烯三胺進行攪拌數小時，隨後置入鐵弗龍壓力釜中於180oC反應36小時。藉由排除煅燒處理而減少晶粒邊界問題與產生高純度晶粒的優勢，成功利用溶劑浴熱法製備出純度高、含二元相少且結構穩定的黃銅礦相的CuBSe2與Cu (In0.9B0.1) Se2 新穎奈米棒結構，並可藉由調整參雜比例之不同而改變其能隙值，進而探討奈米材料的型態、結晶性、組成比例、光電性質與反應機制，其堆疊成薄膜太陽能電池轉換效率可達1.89 % 與2.34 %。
因此本論文以上述技術來製備出多種類與規格的薄膜太陽電池吸光奈米材料。打破以往合成方法只能適用於某些特殊材料或昂貴設備合成的限制，只要掌握適當的前驅物與鉗合劑，此種方法將可發展成適用所有太陽電池吸光奈米材料的技術，並運用此種技術將薄膜太陽電池的發展朝向更高效率、高安全、更低成本的方向邁進。

This work main purpose is the expectation prepares the thin film solar cell absorber material by the solvothermal process or electrospinning process. In the solvothermal process or electrospinning process of the self-assembly mechanism, and controls the suitable condition, such as different solvents, and reaction conditions to produce the chalcopyrite absorber materials, and synthesis single-layer film of absorber layer by drop-casting. We fabricated the first batch of thin film solar cells in our laboratory using these films following chemical bath deposition of CdS layer, and RF sputtering of 60 nm intrinsic zinc oxide and 200 nm of ITO layers.
Basic on our inference from these research, a typical reaction is carried about by adding CuCl, elemental Se, InCl3 and GaCl3, PVB, and ethanol absolute, while magnetically stirred at room temperature for 2 h, followed by N2 bubbling at 80 °C for 2 h while stirring to obtain a homogenous precursor of PVB/Cu(InxGa1-x) Se2 composites. Homogeneous precursor solutions of PVB/Cu (InxGa1-x) Se2 composites were prepared and used immediately for electrospinning. Finally PVB/Cu (InxGa1-x) Se2 nanofibers were obtained. A completely crystalline structure formed in the chalcopyrite Cu (In0.8Ga0.2) Se2 nanofibers with the addition of PVB to the electrospinning step after annealing. The device parameters for a single junction Cu (In0.8Ga0.2) Se2 solar cell under AM1.5G are as follows: open circuit voltage of 311 mV, short-circuit current of 23.4 mA/cm2, fill factor of 27 %, and a power conversion efficiency of 1.96 %.
In addition, a typical experimental procedure, the product chalcopyrite Cu (InxB1-x) Se2 can be prepared from a stoichiometric mixture of Se powder, CuCl2, InCl3 and BO3. The reagents were loaded into Teflon lined autoclave, which was then filled with anhydrous diethylenetriamine up to 80% of the total volume. The autoclave was maintained at 180 oC for 36 h, and then allowed to cool to room temperature naturally. The main advantages of solvothermal synthesis are related to homogeneous nucleation processes due to elimination of the calcinations step to produce very low grain sizes and high purity powders. The band gaps of the chalcopyrite Cu (InxB1-x) Se2 nanocrystals can be readily tuned between 3.13 and 1.05 eV by adjusting the ratios of boron to indium. The device parameters for a single junction CuBSe2 and Cu (In0.9B0.1) Se2 thin film solar cell under AM1.5G are as follows: open circuit voltage of 310 and 265 mV, short-circuit current of 25.5 and 25.9 mA/cm2, fill factor of 24 % and 34 %, and a power conversion efficiency of 1.89 % and 2.34 %.
Therefore, we plan to prepare different types absorber materials for thin film solar cells by the solvothermal process and electrospinning process. Further more, We can possibility demonstrates the methods of solvothermal and electrospinning process approach for absorber layers from fabricating high-efficiency thin film solar cells and provide more evidences in this approach, and offer a low-cost, high-efficiency route to thin-film PV devices fabrication.

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