本論文針對氮化鎵摻雜錳材料的光電特性與應用於紫外光偵測器的特性探討之研究，材料光電特性包含穿透率與霍爾量測，而元件的部分包括金屬－半導體－金屬光偵測器與p-i-n光偵測器，我們將氮化鎵摻雜錳材料應用於光偵測器的吸收層，分別量測暗電流(dark current)、照光光電流(photocurrent)及光響應度(responsivity)，與傳統以氮化鎵材料為吸收層的光偵測器作比較。
　　根據穿透率量測的結果，氮化鎵摻雜錳材料在禁帶會形成雜質能階，因此材料除了吸收能量大於能隙的光子之外，也會吸收能量大於雜質能階與價(導)電帶間能量差值的光子，我們利用此特性將MnGaN材料應用於光偵測器的吸收層，其在響應值曲線的表現與氮化鎵材料為吸收層的光偵測器比較有著截然不同的結果，以MnGaN材料當作吸收層的元件為具有二階響應效果的光偵測器，即單一元件可偵測兩種不同的波長，此特性對於光通訊方面將可提供多元的應用。

This study focuses on the optical-electrical characteristics of manganese-doped GaN (MnGaN) materials for application in UV photodetectors (PDs). The optical-electrical characteristics of the materials include transmittance and Hall measurements. The MnGaN materials were applied to the absorption layers and fabricated into two types of PD devices, namely, metal-semiconductor-metal and p-i-n PDs. By measuring dark current, photocurrent, and responsivity, PDs with MnGaN absorption layers were systematically compared with Mn-free GaN-based PDs.
According to the transmittance measurement, MnGaN materials exhibited impurity levels in the forbidden band. Therefore, photons with more energy than material bandgaps are absorbed. Photons that have energy greater than the difference between the impurity level and the valence (conduction) band are absorbed as well. Compared with that of Mn-free GaN-based PDs, the photo response of MnGaN-based PDs exhibited band-to-band and impurity level transition; hence, two different wavelength regions of light are detected. That is, a single MnGaN-based PD device exhibits two-step-responsivity characteristics, which can be widely applied to optical communications.

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