本實驗利用射頻磁控濺鍍系統在玻璃基板與導電矽基板上沉積不同參數的摻鐵之氧化鋅(FZO)薄膜，並與沒有摻雜物的氧化鋅(ZnO)薄膜進行比較，而後再進行後退火前後FZO基礎特性比較，並評估電性是否有改善與提升。由X光繞射分析儀可知，製備出來摻雜鐵的氧化鋅薄膜晶體結構為六方纖鋅礦結構，與氧化鋅薄膜相較並無改變；從原子力顯微鏡與掃描是電子顯微鏡觀察中可得知，較高的能量(高基板溫度與高製程功率)製備下，FZO薄膜具有較高的晶粒與較大的表面粗糙度；由紫外光-可見光光譜儀量測結果中觀察到，FZO其可見光穿透度平均仍在80 %以上，符合透明導電薄膜可見光高穿透性；此外，在前人文獻中FZO能隙小於ZnO ，而本實驗中FZO薄膜在相同參數下其能隙(band gap)會與ZnO薄膜差異不大，推估與晶粒大小有關，由於FZO粒徑遠小於ZnO，較小的晶粒會提高其能隙，因而使FZO能隙與ZnO差異不大；而在X光能譜儀量測中可得知，退火後會使薄膜中的Fe2+會氧化成Fe3+，使得薄膜中Fe3+比例上升；最後在電流-電壓曲線(I-V curve)量測與導電力原子顯微鏡結果中，可得知退火後FZO導電性確實有提高，推測原因為晶粒變大使晶界變少，使得載子遷移率上升；或為Fe3+比例增加，使載子濃度上升進而改善導電率，但電阻下降幅度不大，推測原因為FZO薄膜中有生成微量的氧化鐵(Hematite)，氧化鐵為非電的良導體，因而使我的電性無顯著地改善。

ZnO is a promising material of transparent conductive oxides (TCOs), and ZnO has been reported as doping common impurities (Al, Ga, B, etc.) to change its chemical and physical properties. In this study, the Fe-doped ZnO (FZO) thin films were fabricated by R.F. sputtering deposition. In order to investigate the effect of the ratio of Fe3+/ (Fe2++Fe3+) on the properties of FZO thin films, the FZO films were annealed at 550 ℃ for 1 h under the O2 environment. The structural, morphological, optical, and electrical properties of these films were examined before and after annealing via X-ray diffractometer (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), UV-Vis spectroscopy, and 4156C semiconductor parameter analyzer respectively. The XRD patterns showed FZO films with a (002) preferred orientation both before and after the posting annealing treatment. The roughness of FZO films increased after the posting annealing. In addition, the average transmittance of the FZO thin films within the visible-light range (380~780 nm) was about 80 % both before and after annealing. The band gap of the FZO thin films were from 3.25 to 3.3 eV. It is not much different from that of ZnO under the same parameters. It is related to the grain size, because the FZO grain is much smaller than ZnO makes its energy gap rise, so it is as close as ZnO. Moreover, XPS results showed that the ratio of Fe3+/ (Fe2++Fe3+) would enhance after the posting annealing. The I-V curve results and the pattern of CAFM revealed that the electrical resistivity would decrease with the increasing of the ratio of Fe3+/ (Fe2++Fe3+), which is owing to Fe3+ provided one more electron than Fe2+ and thus improved the carrier concentration of the FZO films. The other reason was the increasing grain size of the FZO films, which would reduce the grain boundary and increase the electron transport efficiency. However, the magnitude of the decrease in resistance is not large due to a small amount of iron oxide formed in the FZO thin films, so that the electrical property is not significantly improved in my research.

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