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研究生: 黃佑沂
Huang, Yu-yi
論文名稱: 不同退火溫度之有機駢苯衍生物薄膜電晶體特性研究
Perylene derivative based organic thin film transistors fabricated under various annealing conditions
指導教授: 周維揚
Chou, Wei-yang
學位類別: 碩士
Master
系所名稱: 理學院 - 光電科學與工程研究所
Institute of Electro-Optical Science and Engineering
論文出版年: 2007
畢業學年度: 95
語文別: 中文
論文頁數: 73
中文關鍵詞: 有機駢苯衍生物退火
外文關鍵詞: PTCDI-8C, annealing
相關次數: 點閱:92下載:2
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  • 本論文研究以有機駢苯衍生物N,N'-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-8C)作為有機薄膜電晶體主動層之元件特性研究。首先,利用熱蒸鍍法製作以PTCDI-8C薄膜為主動層之下閘極式頂部接觸的電晶體元件結構。本論文主要分為兩部份,第一部分為以聚亞醯胺薄膜(polyimide;簡稱PI)作為修飾層探討表面能與電晶體傳輸特性的關係。第二部份為使用不同電極當作電晶體之源、汲極製成之有機薄膜電晶體經過不同溫度退火處理後元件電性的變化。
    第一部份,使用PI作為修飾層,降低半導體層與絕緣層表面能差異過大的問題,經由降低絕緣層的表面能,可使載子遷移率有顯著的提升,由0.07 提升到0.6 cm2/Vs 。
    第二部份,是採用不同金屬(Au、Ag、Al等)作為電晶體之源、汲極,且將元件在不同溫度下退火,溫度由50至110 ℃,經由電性分析,可得知,退火溫度70 ℃為最適合之溫度,在此溫度下薄膜電晶體元件呈現最佳的載子傳輸效能。再經由X-ray繞射分析可以研究薄膜微結構的有序性,發現在退火溫度70 ℃時繞射主峰有最小的半高寬,表示以此溫度退火後的薄膜微結構較好,有利於載子傳輸。

    We have studied the thin-film transistors and electronic transport properties of n-type organic semiconductor, N,N'-dioctyl-3,4,9,10- perylene tetracarboxylic diimide(PTCDI-8C). Inverted staggered transistor structure with a bottom gate was used to form the PTCDI-8C-based thin- film transistors in which the thin films of the PTCDI-8C were prepared by thermal evaporation. Two research topics are contained in the thesis. In the first topic, we investigated the relationship between PTCDI-8C thin-film transistors characteristics and surface energy of polyimide (PI) played a role as a modification layer on gate dielectric surface. In the second topic, a series of the thin-film transistors were fabricated under different annealing temperatures. The mobility of organic thin-film transistors has been improved from 0.07 to 0.6 cm2/Vs by using PI as a modification layer due to reducing of the surface free energy of SiO2 dielectric. After thermal treatments under 50 – 110 °C, the high electron mobility of 0.8 cm2/Vs was achieved at 70 °C. At the same time, the smallest half-width of X-ray diffraction peak under annealing temperature of 70 °C indicates that a more homogeneous microstructure associated with lower molecular relaxation energy could benefit carrier transportation.

    摘要 I ABSTRACT II 致謝 III 目次 V 表目錄 VIII 圖目錄 IX 第1章 簡介及理論基礎 1 1.1 有機半導體(ORGANIC SEMICONDUCTOR) 1 1.1.1 有機半導體之簡介 1 1.1.2 有機半導體的傳輸機制 2 1.2 有機薄膜電晶體 3 1.2.1 有機薄膜電晶體概論 3 1.2.2 有機薄膜電晶體之結構 4 1.2.3 薄膜電晶體基本原理 4 1.2.4 有機薄膜電晶體基本特性及分析公式 5 1.3 N型有機材料應用於薄膜電晶體的發展 8 第2章 實驗製程原理及量測 16 2.1 有機薄膜電晶體的製程 16 2.1.1 物理氣相沉積技術 16 2.2 X-RAY 繞射量測系統 18 2.3 原子力顯微鏡 18 2.4 光激螢光(PHOTOLUMINESCENCE,PL) 19 2.4.1 光激螢光架構 20 2.4.2 光激螢光激發光譜(photoluminescence excitation, PLE) 20 2.5 表面能量測 21 2.5.1 原理 21 2.6 電性量測 22 第3章 修飾層對有機半導體層載子傳輸的影響 30 3.1 元件製作 31 3.1.1 基版準備 31 3.1.2 基板清洗 31 3.1.3 樣品製作 31 3.2 電性結果與分析 32 第4章 不同退火溫度對PTCDI-8C薄膜電晶體元件特性的影響 40 4.1 元件之製作 41 4.2 電性的結果與討論 42 4.3 X-RAY分析 46 4.4 AFM的比較 48 4.5 光激螢光分析 49 第5章 結論與未來展望 69 參考文獻 71

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