本論文透過射頻磁控濺鍍法沉積之氧化錫鋅薄膜，討論不同製程參數下的薄膜特性，分析其影響並將其套用在紫外光電元件上，其中包括了紫外光感測器以及薄膜電晶體。
第一部分，我們利用射頻磁控濺鍍來沉積氧化錫鋅薄膜，在沉積的過程中，調整不同氧氣與氬氣的通入比例，並在沉積完成後進行退火，以得到不同特性的薄膜，將這些薄膜進行結構分析、光學分析、和材料分析。結構分析中，可以觀察到所有氧化錫鋅薄膜都呈現非晶的狀態，且不同氧通量的薄膜都有非常均勻的表面，粗糙度方均根均小於0.65奈米，而經過退火的薄膜，在退火溫度上升時，表面粗糙度會下降，證實退火會改善表面的缺陷。在光學分析中，所有薄膜都非常透明，可見光區的平均穿透率都大於80%，不會受退火溫度以及氧通量的影響。而材料分析中，X射線光電子能譜可以觀察到，當氧通量上升的同時，氧空缺的比例會隨著下降，而退火的薄膜，在退火溫度上升的時候，氧空缺也有明顯的下降趨勢。
第二部分，我們利用射頻磁控濺鍍法來製備氧化錫鋅之光感測器，以不同的氧通量以及退火溫度當作製程的參數，分別是0%、4%、10%的氧氣比例，以及攝氏150度、200度，製備的元件在氧通量為0%的時候呈現歐姆型態的特性，4%跟10%呈現蕭基型態的特性，當光感測器經過退火的流程後，能夠提升光電流及暗電流，且增強了光響應，但也使得4%進行200度退火的光感測器變成了歐姆型態。我們也發現當氧通量比例上升時，時間響應會因此減少。最後我們得到氧通量比例10%並進行攝氏200度真空退火一小時的光感測器有最好的表現，光暗電流比為1.61×10^2，響應值9.72×10^(-6) (A/W)，響應拒斥比1.59×10^2，開關時間分別為 1.03秒及1.02秒。
第三部分，以磁控濺鍍的方式來製作氧化錫鋅薄膜電晶體，透過控制氧通量的比例，以改變自由載子和缺陷的數量，藉以改善薄膜電晶體的電特性。在真空退火後，薄膜電晶體也因為原子的重新排列與金屬和氧的鍵結增強使得電性獲得了改善，得到了氧通量4% 退火500度一小時的薄膜電晶體為最佳參數，臨界電壓為3.224(V)，場效電子遷移率為4.744(cm^2⁄Vs)，開關電流比為9.85×10^7，次臨界擺幅為0.499 (V⁄decade)。接著，我們也製作出了氧化錫鋅的光電晶體，響應拒斥比為 1.19×10^6，但其時間響應未達到理想的值，呈現與歐姆型態的光感測器一樣的結果，無法在短時間內完成開關的動作 。

This study focuses on the deposition of Zn2SnO4 thin films using radio-frequency magnetron sputtering. The thin film characteristics under different process parameters are investigated, and their application in ultraviolet (UV) photodetection devices, including UV sensors and thin-film transistors, is explored.
In the first part, Zn2SnO4 thin films are deposited using RF magnetron sputtering. Different ratios of oxygen and argon gases are used during the deposition process, followed by annealing to obtain films with varying properties. Structural analysis, optical analysis, and material analysis are conducted on these films. The structural analysis reveals that all Zn2SnO4 thin films exhibit an amorphous structure, and films with different oxygen fluxes exhibit highly uniform surfaces with root-mean-square roughness of less than 0.65 (nm). The annealed thin films show a decrement in surface roughness with increasing annealing temperature, indicating the improvement of surface defects through annealing. Optical analysis shows that all films exhibit high transparency, with average transmittance in the visible range exceeding 80%, and the transparency is unaffected by annealing temperature and oxygen flux. Material analysis using X-ray photoelectron spectroscopy reveals that as the oxygen flux increases, the proportion of oxygen vacancies decreases, and annealed films exhibit a significant reduction in oxygen vacancies with increasing annealing temperature.
In the second part, we fabricated Zn2SnO4 photodetectors using RF magnetron sputtering. Different oxygen flow ratios and annealing temperatures, specifically 0%, 4%, and 10%, and 150°C and 200°C, were used as process parameters. The devices fabricated with a 0% oxygen flux ratio exhibited Ohmic characteristics, while those with 4% and 10% ratios showed Schottky characteristics. After the annealing process, the photodetectors exhibited improved photo current, dark current, and responsivity, except for the 4% oxygen flow ratio device annealed at 200°C, which changed to ohmic characteristics. It was observed that the time response decreased with increasing oxygen flow ratio. Ultimately, the best-performing photodetector was achieved using a 10% oxygen flow ratio and annealing at 200°C for one hour, with a photo-to-dark current ratio of 1.61×10^2, a responsivity of 9.72×10^(-6) (A/W), a rejection ratio of 1.59×10^2, and rising and falling time of 1.03 (seconds) and 1.02 (seconds), respectively.
In the third part, Zn2SnO4 thin-film transistors (TFTs) were fabricated using RF sputtering. Different oxygen flow ratios can control the number of free carriers and defects and improve the electrical properties of the TFTs. After annealing, the rearrangement of atoms and enhanced bonding between metal and oxygen led to improved electrical properties of the TFTs. The optimized parameters for the fabricated TFT was a 4% oxygen flow ratio and annealing at 500°C for one hour, resulting in a threshold voltage of 3.224 (V), a field-effect mobility of 4.744 (cm^2⁄Vs), an on-off ratio of 9.85×10^7, and a subthreshold swing of 0.499 (V⁄decade). In addition, Zn2SnO4 phototransistors were fabricated, exhibiting a rejection ratio of 1.19×10^6. However, their time-resolved response didn't reach the desired value, showing similar results to the Ohmic characteristics photodetectors, indicating an inability to complete the switching operation within a short period.

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