快速升溫化學氣相沉積成長矽基三元材料(SiCN)薄膜
及其應用於光電元件的研究
張正男* 方炎坤**
國立成功大學
電機系微電子工程研究所
摘 要
本論文報導利用快速升溫化學氣相沈積系統（RTCVD），及使用三種不同氣體【Propane C3H8】、【Ethylene C2H4】、【MethySilane SiH3CH3】作為C原子的來源，成長SiCN薄膜，並以此薄膜作為基礎，製作出可發短波長光的光電元件。由實驗結果得知，金屬Ni、Au可與SiCN薄膜形成良好的歐姆接觸，而IZO可與SiCN成為蕭特基接觸。藉由歐姆接觸和蕭特基接觸，製作出n-SiCN/p-Si異質接面二極體和IZO/n-SiCN蕭特基二極體，此兩種二極體皆能發出短波長的紫色光。但經PL的量測結果發現SiCN薄膜應發紫外光，這樣的結果吾人認為可能是因缺陷的存在所致。由發光的現象顯示，SiCN材料在短波長光源的應用上應是潛力無窮。
*作者 **指導教授

RTCVD Prepared SiCN Thin Films for
Optoelectronic Devices Application
Cheng-Nan Chang* Y. K. Fang**
Institute of Microelectronics, Department of Electrical Engineering,
National Cheng Kung University, Tainan, Taiwan, R.O.C.
ABSTRACT
Silicon carbon nitride (SiCN) has been a material of interest for many researchers owing to its many interesting physical characteristics and wide area of possible applications. However, there are few reports about the electro-luminescence phenomenon of this ternary-compound material.
This thesis reports the electrical properties and optoelectronic devices applications of heteroepitaxial SiCN films. The SiCN films were prepared on crystal silicon substrate by rapid-thermal chemical vapor deposition (RTCVD) system. The ohmic and Schottky contacts to the deposited SiCN films are discussed firstly, then based on the results of metal contacts to the SiCN films, two blue-violet light emitting devices, n-SiCN/p-Si heterojunction diode and Indium-Zinc-Oxide (IZO)/n-SiCN Schottky diode, are developed.
The performances of two blue-violet light emitting devices are examined by I-V characteristic, electro luminescence (EL) photograph and photo luminescence (PL) spectra. From the PL measurement, the SiCN film has a direct band gap of about 3.77eV. But in the EL photograph, the emitting light is blue-violet color, which may be caused by defect emission. These optical results indicate the potential of SiCN for advanced blue and ultra-violet (UV) optoelectronic devices applications.
*Author **Advisor

※ 參考文獻
[1] C. M. Sung and M. Sung, Mater. Chem. And Phys. 43, 1 (1996)
[2] A. Y. Liu and M. L. Cohen, Science 245, 841 (1989)
[3] Zheng Gong, E. G. Wang, G. C. Xu, Yan Chen, “Influence of deposition condition and hydrogen on amorphous-to-polycrystalline SiCN films”, Thin solid films, vol.348, p.114-121, 1999
[4] L. C. Chen, C. Y. Yang, D. M. Bhusari, K. H. Chen, M. C. Lin, J. C. Lin, T. J. Chuang, Diamond and Relat. Mater., vol.5, p.514, 1996
[5] L. C. Chen, D. M. Bhusari, C. Y. Yang, K. H. Chen, T. J. Chuang, M. C. Lin, C. K. Chen, Y. F. Huang, Thin Solid film, vol.303 12, p.66, 1997
[6] D. M. Bhusari, C. K. Chen, K. H. Chen, T. J. Chuang, L. C. Chen, M. C. Lin, J. Mater. Res., 12, p.322, 1997
[7] L. C. Chen, C. K. Chen, S. L. Wei, D. M. Bhusari, K. H. Chem, Y. F. Chen, Y. C. Jong, Y. S Huang, Appl. Phys. Lett., vol.72, p.2462, 1998
[8] J. J. Wu, K. H. Chen, C. Y. Wen, L. C. Chen, X. J. Guo, H. J. Lo, S. T. Lin, Y. C. Yu, C. W. Wang, E. K. Lin, “Effect of carbon source on silicon carbon nitride films growth in an electron cyclotron resonance plasma chemical vapor deposition reactor”, Diamond and Relat. Mater., vol.9, p.556-561, 2000
[9] K. H. J. J. Wu, C. Y. Wen, L. C. Chen, C. W. Fan, P. F. Kuo, Y. F. Chen, Y. S. Huang, ”Wide bandgap silicon carbon nitride films deposited by electron cyclotron resonance plasma chemical vapor deposition”, Thin Solid Films, vol. 355-356, p.205-209, 1999
[10] J. J. Wu, C. T. Wu, Y. C. Liao, T. R. Lu, L. C. Chen, K. H. Chen, L. G. Hwa, C. T. Kuo, K. J. Ling, “Deposition of silicon carbon nitride films by ion sputtering”, Thin Solid Films, vol.355-356, p.417-422, 1999
[11] X. C. Xiao, Y. W. Li, L. X. Song, X. F. Peng, X. F. Hu, “ Structural analysis and microstructural observation of SiCxNy films prepared by reactive sputtering of SiC in N2 and Ar”, Applied surface science, vol.156, p.155-160, 2000
[12] Andrew J. Steckl and J. P. Li, “Epitaxial growth of β-SiC on Si by RTCVD with C3H8 and SiH4, ” IEEE Trans. Electron devices, vol.39, no.1, p.64-75, 1992
[13] 汪建民, “材料分析”,p194,中國材料科技學會
[14] J.Anthony Powell, Lawrence G.Matus and Maria A.Kuczmarski, “Growth and characterization of cubic SiC single-crystal films on Si”, J. Electrochem. Soc., vol.134, no.6, p.1558, 1987
[15] 宋有忠, “透明電極/碳化矽接觸系統之研究”, 國立成功大學八十二學年度碩士班論文
[16] A. S. Bhuiyan, A. Martinez and D. Esteve, “A new Richardson plot for non-ideal Schottky diodes”, Thin Solid Films, p.93-100, 1988
[17] 邱霖宏, “低溫成長氧化銦鋅(IZO)薄膜之特性探討及其於有機電激發光元件(OLED)之應用研究”, 國立成功大學八十九學年度碩士班論文
[18] J. D. Hwang, Y. K. Fang, K. H. Wu and D. N. Yaung, “Visible electroluminescence from a novel β-SiC/p-Si n-p heterojunction diode prepared by rapid thermal chemical vapor deposition”, Appl. Phys. Lett., 1995
[19] Toshiro Futagi, Takahiro Matsumoyo, Masakazu Katsuno, Yaumitsu Ohta, Hidenori Mimura and Koich Kitamura, “Visible electroluminescence from p-type crystalline silicon/porous/n-type microcrystalline SiC pn junction diode”, Jpn. J. Appl. Phys., vol.31, p.616-618, 1992
[20] 楊敦年, “β相碳化矽/單晶矽異質接面元件之製造及其特性研究”, 國立成功大學八十二學年度碩士班論文