本研究致力於減緩金半接面之費米能階釘札效應，藉由多種低溫製程製備極薄之絕緣層，形成金氧半歐姆接觸。其中，我提出了易於控制的低溫成長方法，成功製備低蕭基能障63毫電子伏特之金氧半歐姆接觸。
並探討不同功函數之金屬，鋯和鐿，於此結構之電性，證實此製程能有效減緩費米能階釘札效應。更進一步地以反應濺鍍沉積氮化鐿，製備具有良好的電性及熱穩定性的金氧半歐姆接觸。

This work dedicated to alleviating the fermi level pinning effect on metal-semiconductor interface by inserting an ultra-thin insulator with room temperature process. I proposed a well-controlled room-temperature process to form a Ohmic contact with low effective barrier height of 63meV. Also, the modulation of fermi level is demonstrated by comparing with two different work function metals, Zr and Yb. Further, introducing reactive sputtering to deposit YbN shows not only low barrier height and high thermal stability.

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