本論文主要是研究無機材料硫氰酸亞銅(CuSCN)作為紫外線光檢測器之吸收層，探討其檢測特性。本研究利用恆電位電流儀以電化學沉積(電鍍)的方式將CuSCN薄膜沉積在ITO玻璃基板上，研究薄膜相關特性，然後利用微影定義指叉式電極圖形，並鋪上一層金屬銀作為蕭特基接觸之電極，形成金屬-半導體-金屬(金半金)結構之紫外線光檢測器。
　　研究不同濃度電鍍液沉積的薄膜之相關特性，藉由掃描式電子顯微鏡(SEM)、X光繞射分析儀(XRD)與紫外線/可見光光譜儀等，分別觀察CuSCN薄膜表面型態、分析其晶體結構與薄膜穿透吸收頻譜。最後以電鍍液濃度12 mM、24 mM與33 mM鍍製的CuSCN薄膜製作成金屬-半導體-金屬(金半金)結構之紫外線光檢測器，使用指叉狀電極間距為2 μm和5 μm之元件，給予-3 V到0 V的偏壓量測光響應，元件中，以電極間距為5 μm之元件在光檢測上最穩定。以紫外光照射及偏壓-3 V下，濃度相對應之元件其光暗電流比為1.11×102、2.88×103和2.11×102，紫外光/可見光之光響應比值為27.58、653.29和66.38。
　　最佳紫外光響應及紫外光/可見光光響應比值之元件都是以24 mM電鍍液濃度鍍CuSCN，這可能是：以此濃度電鍍之薄膜有著較平滑的表面、較大的晶粒以及晶粒堆積較密實的結果。總言之，CuSCN金半金結構紫外線光檢測器是個很優異的紫外光檢測元件。

This thesis investigates photo-detecting characteristics of a CuSCN film as an ultraviolet (UV) photodetectors (PD) absorber. The CuSCN films were deposited on an ITO glass substrate by electrodeposition technique. Film properties of the CuSCN films deposited with various electrolyte solution concentrations were analyzed using SEM, XRD and UV/visible transmission spectra. Solution concentration of 12 mM, 24 mM and 33 mM were chosen to fabricate the metal-semiconductor-metal (MSM) PDs with electrode’s finger spacing of 2 μm and 5 μm. Devices with finger spacing of 5 μm exhibit the most stable detecting characteristics. The photocurrent magnifications under UV illumination are 1.11×102, 2.88×103 and 2.11×102 at a bias voltage of -3 V, and their UV-visible response rejection ratio (RUV/R400 nm) are 27.58, 653.29 and 66.38, respectively. The concentration of 24 mM fabricated PDs exhibits the best UV photo response and the highest UV-visible rejection ratio. This might attribute to its relatively smoother film surface, larger grains and grain packing denser as compare to other concentration fabricated PDs. In all, the CuSCN MSM PD is a great candidate for UV detecting devices.

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