有機發光二極體是藉由從陽極、陰極注入的電洞及電子在發光層中再結合發出不同的光色，因此電荷傳輸速率之平衡對發光效率有很大的影響，透過發光材料之結構設計，有效增加電洞及電子之再結合機率。
本研究以Wittig reaction合成以芴(fluorene)為核心，三苯胺 (triphenylamine)為末端基之化合物(TF)，並且以紅外光譜(FT-IR)、核磁共振光譜(1H-NMR)、元素分析儀(EA)鑑定其結構，並探討其熱性質、電化學性質、光學性質、表面成膜性質、電激發光元件性質。
TF以芴為核心，並經由Wittig reaction產生共軛鍵，因此中心為剛硬平面結構，使玻璃轉移溫度達到89 oC。薄膜態UV/Vis最大吸收和螢光光譜(PL)最大放光分別為425 nm和506 nm，TF分子結構具有三苯胺基團有效提升其HOMO能階(-5.12 eV)，降低電洞由PEDOT:PSS注入能障。TF (Mw = 1140)可利用簡易旋轉塗佈的方式製備均勻薄膜，薄膜表面的粗糙度(rms roughness = 1.02 nm)低於傳統電洞傳輸材料NPB。將TF摻混至PF (polyfluorene)作為發光層，元件結構為[ITO/ PEDOT:PSS/TF+PF (110 nm)/LiF (0.5 nm)/Ca (50 nm)/Al (100 nm)]，隨著TF摻混比例增加，起始電壓隨之增大，TF4(1 wt%TF+PF10 mg)最大亮度和最大電流效率分別為4040 cd/m2、1.62 cd/A， CIE 1931色度座標(0.17, 0.39) 。TF作為電洞傳輸層元件結構為[ITO/PEDOT:PSS/HTL(100 nm)/Alq3(70 nm)/LiF (0.5 nm)/Al (100 nm)]最大亮度和最大電流效率分別為9390 cd/m2、2.90 cd/A，CIE 1931色度座標為(0.29, 0.55)，電流效率遠高於以NPB為電洞傳輸層之元件效率(1.24 cd/A)明顯提升。研究結果顯示，此TF兼具發光及電洞傳輸功能，且可以溼式塗佈方式加工，具有光電材料應用的潛力。

In this study, a trifunctional 4,4,4,,-{[9,9-bis(hexyl) -9H -fluorene-2,4,7-triyl]tri-2,ethane-diyl}tris(N,N-diphenyl)benzeneamine (TF), containing fluorene core and terminal triphenylamines, was syn- thesized by Wittig reaction. The characteristics of TF were analyzed by FT-IR, 1H-NMR, elemental analysis, DSC, optical spectra, cyclic voltammetry, and AFM. The TF exhibited moderate glass transition temperature (Tg = 89 ℃). In film state, it shows absorption and photo luminescence (PL) peaks at 425 nm and 506 nm, respectively. The triphenylamine terminals were intentionally incorporated to increase hole-transpoting ability and to decrease barrier height of hole injection. Double-layer electroluminescent devices [ITO/PEDOT:PSS/blend layer (110 nm)/LiF(0.5 nm)/Ca(50 nm)/Al(100 nm)], were fabricated to investigate the influence of TF contents on emission characteristics. The maximum brightness and current efficiency of blend devices were 4040 cd/m2 and 1.62 cd/A, respectively. Furthermore, TF can also be employed as hole-transporting layer (HTL) to increase carriers injection. For instance, when fabricated as ITO/PEDOT:PSS/ HTL/Alq3(70 nm)/LiF(0.5 nm)/ Al(100 nm), its maximum brightness (9390 cd/m2) and current efficiency (2.90 cd/A) were superior to those using NPB as hole-transpoting layer. In addition, homogeneous TF film is readily prepared by simple wet processes (spin-coating), while NPB film is usually obtained by vacuum vapor deposition. Our results indicated that the TF is a potential optoelectronic material which is readily processed by spin-coating.

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