成功大學博碩士論文系統

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研究生：	蔡明哲 Tsai, Ming-Che
論文名稱：	以金屬化學氣相沉積法在砷化鎵基板成長長波長雷射 Growth of GaAs-based Long-Wavelength Laser Diode by MOCVD
指導教授：	張守進 Chang, Shoou-Jinn 蘇炎坤 Su, Yan-Kuin
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 微電子工程研究所 Institute of Microelectronics
論文出版年：	2006
畢業學年度：	94
語文別：	英文
論文頁數：	115
中文關鍵詞：	雷射、砷化鎵、金屬化學氣相沉積
外文關鍵詞：	laser, GaAs, MOCVD
相關次數：	點閱：124 下載：1
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在長程通訊系統中，雷射二極體需要操作在1300-155奈米的傳輸窗口。這些需求在傳統磷化銦系統的雷射已經可以被達到。然而，一個新穎的材料(氮)砷化銦鎵成長在砷化鎵基版具備許多優點如：(1).在製作砷化鋁鎵/砷化鎵布拉格反射鏡時有高的折射率差異。(2).有高的特性溫度。(3).有較佳的熱傳導特性。近來，這個材料吸引非常大的注意並且有許多研究團隊專注於此，試圖來挑戰磷化銦系統的雷射半導體市場。
首先我們研究砷化銦鎵量子井的材料特性並使用金屬有機氣相沉積法來成長。在微調之後，我們得到非常高磊晶品質的砷化銦三重量子井，發光在其先天的材料限制大約1.2微米且半高寬為25.72毫電子伏特。接著我們並介紹氮摻雜、應力平衡層和銻的輔助成長，初期的成果也顯露出其對延伸發光波長的作用。最後我們把成長品質良好的砷化鎵三重量子井應用於寬面積邊射型雷射二極體。
我們成功地製作砷化鎵三重量子井連續波操作雷射二極體，其發光波長在1220奈米並擁有我們所知道最低的臨界電流56 A/cm2/QW和非常高的特性溫度123.9K。雖然在本論文研究的量子井結構並未完全地應用於雷射二極體，但是我們已經建立一套從長晶到量測的完善系統。相信這對研究半導體雷射過程會有相當大的助益。

For long-distance communication, the laser diodes with operating in the 1.3-1.55um transmission window are desired. The demands have been achieved by InP-based material systems traditionally applied in long-wavelength laser diodes. However, a novel InGaAs(N) based on GaAs system with many superior intrinsic material properties such as (1).high refraction index difference in fabricating AlGaAs/GaAs DBRs, (2).higher To (characteristic temperature), (3).better thermal conductivity and so on. More recently, the novel material takes much attention and investigated by many research groups to challenge the market of well established InP-system.
Firstly we investigate the material characteristics of InGaAs QWs (Quantum Well) and grow it by MOCVD (Metal Organic Chemical Vapor Deposition). After fine tune the growth parameters, we get the very high quality InGaAs TQWs with the FWHM of 25.7meV and the innate limitations of the material for the wavelength about 1.2um. Dilute nitride, SML (Strain-Compensation Layer) and antimony assistant are also introduced and some initial results also shown the effects of elongating the wavelength in the following. The high quality TQWs InGaAs is employed in broad area EEL (Edge Emitting Laser) finally.
We successfully fabricate the InGaAs TQW CW laser diode emission at 1220nm with the lowest Jth/QWs of 56 A/cm2/QW what we know to date and very high To of 123.9K. Though the results of the other QWs structures applied to laser diodes are not achieved yet, we have made a through setup from growth to measurement. We believe that the research in the semiconductor laser diode will be very smooth going.

Abstract (Chinese)……………………………………………………I
Abstract (English)……………………………………………………III
Acknowledgements…………………………………V
Contents…………………………………………………VI
Table Captions………………………………………VIII
Figure Captions…………………………………………IX
Chapter 1 Introduction……………………………………………1
      1-1 Optical Communication…………………………………1
      1-2 Material Consideration for Long  Wavelength System……3
      1-3 Summary of this thesis……………………………6
Chapter 2 Experiment Instrument …………………15
      2-1 Metal Organic Vapor Phase Epitaxy Growth Syste…15
        2-1.1 Mass transport limited growth …………16
        2-1.2 Surface kinetics limited growth ……………………17
        2-1.3 Thermodynamically limit growth …………………18
      2-2 Measurement System………………………19
        2-2.1 HRXRD characterization…………19
        2-2.2 Photoluminescence Spectroscopy…20
        2-2.3 Secondary Ion Mass Spectrometry…21
        2-2.4 Hall measurement…………………22
        2-2.5 Laser measurement system…………23
Chapter 3 Fundamental of Material and Laser Device……………32
      3-1 Material……………………………………32
        3-1.1 InGaAs QWs……………………………32
        3-1.2 Nitride Incorporation effects……33
        3-1.3 Estimation the Nitrogen Composition…36
      3-2 Laser Device………………………………41
        3-2.1 Quantum Wells for Laser Structure…………41
        3-2.2 Lasing Conditions……………………41
        3.2.3 Measurement of Laser Parameters…………43
Chapter 4 Epitaxy of Active Region by MOCVD……………56
      4-1 Design Consideration of Quantum Well………………56
      4-2 Growth of high quality InGaAs QWs……56
      4-3 Extension of Wavelength for the active region…………61
        4-3.1 Dilute Nitride………………………61
        4-3.2 Strain-Compensation Layer…………62
        4-3.3 Antimony Assistant…………………64
Chapter 5 Material Application…………………………………83
       5-1 Application to Laser Device………83
       5-2 Process Procedure………………………85
       5-3 Results & Discussion……………………87
Chapter 6 Conclusion & Future Work………………96
       6-1 Conclusion………………………96
       6-2 Future Work………………………………98
        6-2.1 Active Region………………………98
        6-2.2 Distributed Bragg Reflector……98
        6-2.3 Summary of Future Work……………99
Appendix………………………………………………103
Reference………………………………………………108










                                    

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校內：2010-06-26公開
校外：2010-06-26公開

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