鑒於矽鍺合金在半導體產業及量子計算元件的大量應用，本論文旨在以非破壞性之光學量測的方式，探討矽鍺薄膜中形成的氧化物與奈米團簇之特性。
本實驗利用原子力顯微鏡對矽鍺薄膜進行局域陽極氧化，藉由調變重複氧化密度、偏壓與環境濕度的方式改變氧化物結構，並利用原子力顯微鏡與掃描式電子顯微鏡確認其表面結構差異。
在光學量測上，利用拉曼光譜量測矽鍺氧化物分析其聲子振動模態，並以聲子侷限效應估算其位移量與氧化物中析出之鍺奈米結晶大小，再對比陽極氧化之矽基板、熱氧化矽鍺樣品之拉曼分析確認其差異性，最後以先前量測陽極氧化矽鍺樣品之光電子能譜數據與其估算結晶大小進行驗證，確認實驗中奈米結晶大小之控制。
光致發光顯像顯示了矽鍺氧化物之可見光的不穩定性，並確認其為缺陷性質。

This thesis aims to explore the properties of oxide and germanium nanoclusters formed in Silicon-Germanium(SiGe) films by non-destructive optical measurement.
In this experiment, atomic force microscope has been used to fabricate oxide on SiGe films by locally anodic oxidation. The oxide structure was controlled by adjusting the oxidation line spacing, tip bias and humidity, and the morphology was measured by atomic force microscope and scanning electronic microscope.
The measurement of the phonon vibration mode of SiGe oxide has been operated by Raman spectroscopy. The data of anodic oxidation sample was analyzed to estimate the formation and size of Ge nanocrystals by phonon confinement effect, afterwards, it was compared with the data of Si anodic oxidation sample and SiGe thermal oxidation sample to confirm the differences. The previous data of SiGe anodic oxidation sample measured by X-ray photoelectron spectroscopy was used to estimate the size of Ge nanocrystals and can match with the result estimated by Raman data. It shows that the size of Ge nanocrystals can be controlled in our experiment.
Photoluminescence image measured by photomultiplier shows the visible emission of sample is not steady and attributed to defect effect.

[1] K. Saraswat, C. Chi On, T. Krishnamohan, D. Kim, A. Nayfeh and A. Pethe, "High performance germanium MOSFETs," Materials Science and Engineering B, vol. 135, no. 3, pp. 242-249, 15 12 2006.
[2] J. Liu, X. Sun, B. Yu, K. E. Lee, E. A. Fitzgerald, L. C. Kimerling and J. Michel, "Efficient above-band-gap light emission in germanium," Chinese Optics Letters, vol. 7, no. 4, 10 4 2009.
[3] X. Sun, J. Liu, L. C. Kimerling and J. Michel , "Optical Bleaching of Thin Film Ge on Si," ECS Transactions, vol. 16, no. 10, pp. 881-889, 2008.
[4] S.-L. Cheng, J. Lu, G. Shambat, H.-Y. Yu, K. Sarawat, J. Vuckovic and Y. Nishi, "Room temperature 1.6 µm electroluminescence from Ge light emitting diode on Si substrate," OSA Publishing, vol. 17, no. 12, p. 10019, 2009.
[5] W. Xu, H. Tu, D. Liu, Q. Xiao and Q. Chang, "Self-assembled SiGe nanoparticles integrated into SOI," Materials Letters, vol. 72, pp. 39-41, 2012.
[6] T.-L. Huang, K.-P. Peng, C.-L. Chen, H.-C. Lin, T. George and P.-W. Li, "Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe," Scientific Reports, vol. 9, no. 11303, 5 8 2019.
[7] I. Stavarache, V. S. Teodorescu, P. Prepelita, C. Logofatu and M. L. Ciurea, "Ge nanoparticles in SiO2 for near infrared photodetectors with high performance," Scientific Reports, vol. 9, no. 10286, 16 7 2019.
[8] T. Leonid and D. J. Lockwood, "Silicon-Germanium Nanostructures for Light Emitters and On-Chip Optical Interconnects," Proceedings of the IEEE, vol. 97, no. 7, pp. 1284-1303, 16 6 2009.
[9] S. Takeoka, M. Fujii, S. Hayashi and K. Yamamoto, "Size-dependent near-infrared photoluminescence from Ge nanocrystals embedded," Physical Review B, vol. 58, no. 12, 15 9 1998.
[10] Y. M. Niquet, G. Allen, C. Delerue and M. Lannoo, "Quantum confinement in germanium nanocrystals," Applied Physics Letters, vol. 77, no. 8, p. 1182, 21 8 2000.
[11] P. W. Brazis, "Quantum Dots and Their Potential Impact on Lighting and Display Applications," UL, 2017.
[12] V. V. Dirko, K. A. Lozovoy, A. P. Kokhanenko and A. V. Voitsekhovskii, "Thickness-dependent elastic strain in Stranski–Krastanow growth," Physical Chemistry Chemical Physics, vol. 22, pp. 19318-19325, 21 8 2020.
[13] S. W. Chee, M. Kammler, J. Graham, L. Gignac, M. C. Reuter, R. Hull and F. M. Ross, "Directed Self-Assembly of Ge Quantum Dots Using Focused Si2+ Ion Beam Patterning," Scientific Reports, vol. 8, no. 9361, 19 6 2018.
[14] V. Lavchiev, R. Holly, G. Chen, F. Schäffler, R. Goldhahn and W. Jantsch, "Si rib waveguide photodetector with an ordered array of Ge islands for 1.5 ?m," Optics Letters, vol. 34, no. 24, pp. 3785-3787, 3 12 2009.
[15] A. A. Shklyaev and A. V. Latyshev, "Dewetting behavior of Ge layers on SiO2 under annealing," Scientific Reports, vol. 10, no. 13759, 13 8 2020.
[16] Y.-H. Kuo, S.-H. Chiu, C.-W. Tien, S.-D. Lin, W.-H. Chang, T. George, H.-C. Lin and P.-W. Li, "Nitride-stressor and quantum-size engineering in Ge quantum-dot photoluminescence wavelength and exciton lifetime," Nano Futures, vol. 4, no. 015001, 23 3 2020.
[17] 聖富. 林, "利用掃描探針場致氧化技術製作矽鍺奈米氧化物 Fabrication of SiGe Nano-oxides by Scanning Probe Anodic Oxidation," in 國立成功大學物理研究所碩士論文, 2018.
[18] 和雅. 黃, "掃描探針場致氧化下矽鍺奈米氧化物之電性量測研究 Electron transport in SiGe Nano-oxides Fabricated by Scanning Probe Anodic Oxidation," in 國立成功大學物理研究所碩士論文, 2018.
[19] 一志. 劉, "利用能譜技術研究掃描探針場致矽鍺奈米結構 Studying the scanning probe anodic oxidation induced SiGe nanostructures by using spectroscopic technologies," in 國立成功大學物理研究所碩士論文, 2019.
[20] 英碩. 黃, "掃描探針顯微術的原理及應用 Scanning Probe Microscopy: Principles and Applications," 科儀新知, vol. 26, no. 4, pp. 11-12, 2 2005.
[21] "Basic Contact AFM & Dynamic Force Microscope (DFM)," Park Systems. [Online].
[22] 聖全. 羅, "科學基礎研究之重要利器—掃描式電子顯微鏡(SEM)," 科學研習, no. 52-5, 2013.
[23] "Scanning Electron Microscopy:NanoScience instruments," NanoScience instruments, [Online]. Available: https://www.nanoscience.com/techniques/scanning-electron-microscopy/.
[24] C. V. Raman and K. S. Krishnan, "A New Type of Secondary Radiation," Nature, vol. 121, pp. 501-502, 1928.
[25] G. F. Nataf, "New approaches to understand conductive and polar domain walls by Raman spectroscopy and low energy electron microscopy," 2016.
[26] M. P. Raja and A. R. Barron, "4.3: Raman Spectroscopy: Chemistry Library: LibreTexts libraries," MindTouch®, [Online]. Available: https://chem.libretexts.org/Bookshelves/Analytical_Chemistry/Book%3A_Physical_Methods_in_Chemistry_and_Nano_Science_(Barron)/04%3A_Chemical_Speciation/4.03%3A_Raman_Spectroscopy.
[27] 嘉民. 謝, 一凡. 賴, 永昌. 林 and 至堯. 枋, "光激發螢光量測的原理、架構及應用 Photoluminescence: Principles, Structure, and," 科儀新知, vol. 26, no. 6, 2005.
[28] G. Sun, "Intersubband approach to silicon based lasers—circumventing the indirect bandgap limitation," in Advances in Optics and Photonics, vol. 3, OSA Publishing, 2011, pp. 53-87.
[29] "Thermo Scientific XPS: What is XPS," Thermo Fisher Scientific Inc., [Online]. Available: https://xpssimplified.com/whatisxps-photoemission.php.
[30] "National Synchrotron Radiation Research Center: What is Synchrotron Radiation," National Synchrotron Radiation Research Center, [Online]. Available: https://www.nsrrc.org.tw/english/lightsource.aspx.
[31] I. Hong, T. Lee, G. Yin, D. Wei, J. Juang, T. Dann, R. Klauser, T. Chuang, C. Chen and K. Tsang, "Performance of the SRRC scanning photoelectron microscope," Nuclear Instruments and Methods in Physics Research Section A, vol. 467, no. 2002, pp. 905-908, 7 2001.
[32] M. Kuo, S. Chou, Y. Pan, S. Lin, T. George and P. Li, "“Embedded Emitters”: Direct bandgap Ge nanodots within SiO2," Journal of Applied Physics, vol. 120, no. 233106, pp. 1-6, 19 12 2016.
[33] H. Richter, Z. Wang and L. Ley, "The one phonon Raman spectrum in microcrystalline silicon," Solid State Communications, vol. 39, no. 5, pp. 625-629, 8 1981.
[34] I. H. Campbell and P. M. Fauchet, "The effects of microcrystal size and shape on the one phonon Raman spectra of crystalline semiconductors," Solid State Communications, vol. 58, no. 10, pp. 739-741, 25 2 1986.
[35] V. A. Volodin, D. V. Marin, V. A. Sachkov, E. B. Gorokhov, H. Rinnert and M. Vergnat, "Applying an Improved Phonon Confinement Model to the Analysis of Raman Spectra of Germanium Nanocrystals," Journal of Experimental and Theoretical Physics, vol. 118, no. 1, pp. 65-71, 2014.
[36] Y. Kanemitsu, H. Uto, Y. Masumoto and Y. Maeda, "On the origin of visible photoluminescence in nanometer‐size Ge crystallites," Applied Physics Letters, vol. 61, no. 2187, 13 5 1992.
[37] Y. Maeda, "Visible photoluminescence from nanocrystallite Ge embedded in a glassy Silicon Dioxide matrix: Evidence in surpport of the quantum-confinement mechanism," Physical Review B, vol. 51, no. 1658, 15 1 1995.
[38] B. Pescara and K. A. Mazzio, "Morphological and Surface-State Challenges in Ge Nanoparticle Applications," Langmuir, vol. 36, no. 40, pp. 11685-11701, 31 8 2020.
[39] M. Zacharias and P. M. Fauchet, "Blue luminescence in films containing Ge and GeO2 nanocrystals: The role of defects," Applied Physics Letters, vol. 71, no. 383, 7 5 1997.
[40] T. K. Purkait, A. K. Swarnakar, G. B. De Los Reyes, F. A. Hegmann, E. Rivard and J. G. Veinot, "One-pot synthesis of functionalized germanium nanocrystals from a single source precursor," Nanoscale, vol. 7, no. 2241, 22 12 2014.
[41] M. Aouassa, M. A. Zrir, I. Jadli, L. S. Hassayoun, R. Mghaieth, H. Maaref, L. Favre, A. Ronda and I. Berberzier, "Role of surface passivation on visible and infrared emission of Ge quantum dots formed by dewetting," Bulletin of Materials Science, vol. 42, no. 69, 6 3 2019.
[42] A. S. Zyubin, A. M. Mebel and S. H. Lin, "Optical Properties of Oxygen Vacancies in Germanium Oxides: Quantum Chemical Modeling of Photoexcitation and Photoluminescence," The Journal of Physical Chemistry A, vol. 111, pp. 9479-9485, 22 5 2007.
[43] D. Carolan and H. Doyle, "Size and emission color tuning in the solution phase synthesis of highly luminescent germanium nanocrystals," Journal of Materials Chemistry C, vol. 2, no. 3562, 21 3 2014.
[44] S. Okamoto and Y. Kanemitsu, "Photoluminescence properties of surface-oxidized Ge nanocrystals: Surface localization of excitons," Physical Review B, vol. 54, no. 23, pp. 16421-16424, 15 12 1996.
[45] I. Iatsunskyi, S. Jurga, V. Smyntyna, M. Pavlenko, V. Myndrul and A. Zaleska, "Raman spectroscopy of nano structureed silicon fabricated by metal-assisted chemical etching," SPIE, 2014.