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研究生： 陳奕嘉
Chen, Yi-Chia
論文名稱： 利用Bosch深反應性離子蝕刻製程進行矽晶圓片分割
Employ Bosch DRIE process for silicon die singulation
指導教授： 洪昭南
Hong, Chau-Nan
學位類別： 碩士
Master
系所名稱： 工學院 - 化學工程學系
Department of Chemical Engineering
論文出版年： 2019
畢業學年度： 107
語文別： 中文
論文頁數： 115
中文關鍵詞： 電漿切割技術 、Bosch深反應性離子蝕刻製程 、矽深蝕刻 、SF6/Ar/O2電漿放電 、進階Bosch製程
外文關鍵詞： plasma dicing technology, Bosch DRIE, SF6/Ar/O2 plasma discharge
相關次數： 點閱：117  下載：5 
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    • 隨著元件不斷的減薄與微縮下，現行業界採行之刀具切割與雷射切割技術逐漸出現疲態，難以應付實務上之需求，而電漿切割技術則恰恰相反，在產業浪潮趨向小尺寸及薄化晶片的推波助瀾下不論是在產能、切割品質、晶片形狀多樣性等諸多面向優勢益發顯著。

    本研究採用Bosch深反應性離子蝕刻製程切割矽晶圓片。Bosch深反應性離子蝕刻屬矽深蝕刻技術的一環，由沉積及蝕刻階段重複交疊而成，具備高蝕刻速率且切割溝道側壁垂直度佳之次世代晶圓切割技術。研究內容主要分為三部分，第一部分有別於標準配置採用射頻偏壓源，本研究以脈衝式直流偏壓源對雷射開槽之圖案化矽基板(線寬約6μm)進行Bosch深蝕刻製程，並比較在不同佔空比的條件下對蝕刻特性之影響，此階段得到之矽垂直蝕刻速率為3.27μm/min。第二部分以空白矽基板為試片，僅通入六氟化硫/氬氣模擬Bosch製程中蝕刻階段之製程條件，此階段得到之最高蝕刻速率為11.79μm/min。第三部分共分為前後兩個階段，在正式取得合作廠商提供之產線上試片前，前期使用由實驗室所製備之試片進行初步探討，此試片以舉離製程定義蝕刻溝道(線寬約3μm)，參考第二部分取得之最佳參數，並以此為基礎進行一系列之參數調整，包含在蝕刻階段內六氟化硫/氬氣混氣中添入氧氣(SF6/Ar/O2電漿放電)、採用進階Bosch製程等，此階段取得之最佳矽垂直蝕刻速率為2.29μm/min。第三部分後半段則使用合作廠商提供之產線上試片進行實驗，以雷射開槽定義蝕刻溝道(線寬約40μm)。此階段以Bosch製程進行矽深蝕刻完成半切割加工(half-cutting)，為爾後搭配研磨前切割技術(DBG)做準備，其切割深度要求介於100-200μm，此階段得到之最佳矽垂直蝕刻速率為5.91μm/min。

    Plasma dicing technology has overwhelming superiority of manufacturing throughput, dicing quality, and flexible chip shape over the traditional blade dicing method, especially in thinned and small chip applications. In this dissertation, Bosch DRIE baesd plasma dicing is utilized for silicon die singulation. In comparison with standard configuration using RF biased source, in the first portion of this study, pulsed dc bias is uesd to discuss the effect of duty cycle on the etch characteristics. In the latter portion, chaning the fixed tape materials, adjusting the oxygen addition to sulfur hexafloride/argon mixing gas (SF6/Ar/O2 plasma discharge), and deposition to etch step times ratio, etc to reach high etching rate as well as vertical sidewall. The optimal etching rate obtained in the dessertation is 2.29μm/min and 5.91μm/min with linewidth 3μm and 40μm respectively.

    目錄 中文摘要 i 英文延伸摘要 iii 誌謝 x 目錄 xii 表目錄 xvii 圖目錄 xviii 第1章 緒論 1 1.1 前言 1 1.2 研究動機與目的 5 第2章 理論基礎與文獻回顧 6 2.1 電漿切割技術種類 6 2.1.1 研磨前切割技術 6 2.1.2 研磨後切割技術 7 2.2 電漿切割技術之製程優勢 8 2.3 電漿介紹 19 2.4 電漿生成機制 22 2.5 自我偏壓 25 2.6 電漿蝕刻介紹 26 2.7 電漿蝕刻機制 27 2.8 主蝕刻氣體暨添加性氣體 31 2.8.1 主蝕刻氣體 31 2.8.2 添加性氣體 31 2.9 Bosch製程 36 2.10 電漿蝕刻重要名詞定義 41 2.10.1 蝕刻速率 41 2.10.2 選擇比 42 2.10.3 蝕刻輪廓 43 2.11 負載效應 48 2.11.1 巨觀負載效應 48 2.11.2 微觀負載效應 48 2.12 深寬比暨深寬比蝕刻效應 50 2.12.1 深寬比 50 2.12.2 深寬比蝕刻效應 50 第3章 實驗方法與步驟 53 3.1 實驗流程 53 3.2 實驗系統與設備 54 3.2.1 生產及製造設備 54 3.2.1.1 十二吋之感應耦合式電漿蝕刻機 54 3.2.1.2 八吋之感應耦合式電漿蝕刻機 55 3.2.1.3 旋轉塗佈機 57 3.2.2 檢測及分析設備 57 3.2.2.1 表面輪廓儀 57 3.2.2.2 掃描式電子顯微鏡及能量分散式光譜儀 57 3.3 實驗材料 58 3.3.1 基板材料 58 3.3.2 實驗氣體 59 3.3.3 實驗藥品 59 3.4 實驗步驟 59 3.4.1 電漿蝕刻空白矽基板 59 3.4.2 以舉離製程製備之圖案化矽基板(結構線寬約3μm) 60 3.4.2.1 利用舉離製程定義蝕刻結構圖形 60 3.4.2.2 電漿蝕刻以舉離製程製備之圖案化矽基板(使用八吋蝕刻機) 61 3.4.3 以雷射開槽製備之圖案化矽基板(結構線寬約6μm) 61 3.4.3.1 電漿蝕刻以雷射開槽製備之圖案化矽基板(使用十二吋蝕刻機) 61 3.4.4 以雷射開槽製備之圖案化矽基板(結構線寬約40μm) 62 3.4.4.1 電漿蝕刻以雷射開槽製備之圖案化矽基板(使用八吋蝕刻機) 62 第4章 結果與討論 63 4.1 以脈衝式直流偏壓源進行矽基板蝕刻特性之探討 64 4.1.1 雷射開槽後之圖案化矽基板SEM結果分析 64 4.1.2 利用雷射開槽後之圖案化矽基板進行純蝕刻之探討 64 4.1.3 利用雷射開槽後之圖案化矽基板進行Bosch製程之探討 67 4.1.3.1 探討佔空比大小對蝕刻特性之影響 67 4.2 以空白矽基板進行純蝕刻之探討 71 4.2.1 RF偏壓源功率大小對矽蝕刻速率之影響 71 4.2.2 將固定試片之PI膠帶改為鋁膠帶對矽蝕刻速率之影響 72 4.2.3 調整氬氣對六氟化硫添加比例對矽蝕刻速率之影響 73 4.3 以圖案化矽基板進行Bosch製程之探討 77 4.3.1 利用舉離製程定義蝕刻溝道並進行Bosch製程之探討 78 4.3.1.1 探討Bosch週期內沉積與蝕刻階段時間比對蝕刻輪廓之影響 80 4.3.1.2 探討改變六氟化硫流量且固定氬氣添加比例對蝕刻速率之影 82 4.3.1.3 探討拉長Bosch總製程時間對蝕刻速率與蝕刻輪廓之影響 85 4.3.1.4 探討Bosch製程之蝕刻階段中添加氧氣對蝕刻速率與蝕刻輪廓之影響 87 4.3.1.5 探討使用進階Bosch製程對蝕刻速率與蝕刻輪廓之影響 91 4.3.2 利用雷射開槽定義蝕刻溝道並進行Bosch製程之探討 95 4.3.2.1 以Bosch製程進行電漿切割之結果分析 95 第5章 總結論與未來展望 110 5.1 總結論 110 5.2 未來展望 111 第6章 參考文獻 112

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