本論文針對具微米柱結構氮化鋁鎵系列蕭特基二極體光偵測器之研究，由於成長氮化鋁鎵層的過程中，在微米柱的平台和邊緣側壁上的應力以及成長速率等等的差異影響，會存在相異鋁含量分佈在微米柱的平台和邊緣側壁的氮化鋁鎵層。從CL量測結果，波長340nm和320nm的CL影像圖可以證明，成長氮化鋁鎵層於具有微米柱結構的氮化鎵基板上，在微米柱的邊緣側壁和平台的氮化鋁鎵層有不同的鋁含量。同時光響應量測分析結果有三個階段吸收，截止波長分別落在326nm、346nm、356nm，該波長位置的響應度為1.1×10-2、5.9×10-3、和 4.04×10-3 A/W。
然而在氮化鋁鎵層表面所形成的缺陷而提供的漏電路徑，是因為晶格常數的不匹配加上成長氮化鋁鎵層時的熱擴散效應，導致缺陷的產生，為了抑制漏電流，我們使用硫化銨溶液處理試片表面，發現經過硫化處理後，降低了氧化銦錫的載子濃度和光學能隙，並在表面形成硫保護層，抑制漏電流路徑。

In this study, we demomstrated a single AlGaN layer with two different Al contents on the GaN μ-pillars template. It was found by the selective wavelength spatial cathodoluminescence images that the emission wavelength of the AlGaN layer were at 340 and 320nm on the side of the cone and on the top and valley surface of pillars, respectively. The Schottky-type photodector were also demonstrated on double Al contents of deposited AlGaN on GaN micropillar template. The three steps of response occurred at about 326, 346, and 356nm with responsivities of 1.1×10-2, 5.9×10-3, and 4.04×10-3 A/W, respectively.
However, the pits formation might arise from the lattice mismatch and the higher strain of AlGaN layer on sidewall of GaN pillar, resulting in the larger leakage current. In order to restrain the leakage current and improve the performances, we treated out the surface on sample with (NH4) 2Sx .We found that after (NH4) 2Sx treatment might result in a decrease in the carrier concentration and optical bandgap of ITO film. The effects of an (NH4) 2Sx treatment could change the properties of ITO films and form sulfide passivation for the enhancement of the schottky barrier height.

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