本論文使用實驗室自行合成之不同烷基駢苯衍生物為薄膜電晶體半導體層材料，簡稱PTCDI-CnH2n+1，n=2~8，並經由核磁共振儀器，檢測其一維氫光譜，確定氫原子的數目，並由此推斷碳數是否符合實驗上所需要的各種碳數烷基駢苯衍生物。
我們使用底部接觸式(Bottom contact)的元件結構，利用熱蒸鍍的方式沉積各種不同烷基駢苯衍生物作為半導體層，製作成薄膜電晶體且進一步分析電性及薄膜結構。一開始我們先使用PTCDI-C8H17作為薄膜電晶體半導體層材料，發現在基板溫度100 ℃，半導體膜厚700 Å具有最好的電特性。之後我們用同樣參數分別製做兩個碳到八個碳烷基駢苯衍生物的有機薄膜電晶體，發現載子遷移率隨著皆碳數增加而增加，另外基板未加溫的元件作，發現也與基板加溫的元件有相同趨勢。
在x-ray繞射方面我們發現，x光繞射角隨著碳數增加而減少，配合對各個分子做分子長度運算，可以得到分子傾斜角。在AFM方面我們也發現不同碳數有不同的表面形態，晶粒隨著碳數大小而增大。

In this study, alkyl perylene derivatives were synthesized in our laboratory and applied as the active layers in organic thin-film transistors (OTFTs). Generally, PTCDI-CnH2n+1 are the abbreviations of the alkyl perylene derivatives, where n ranges between 2 and 8. The number of hydrogen atoms of PTCDI-CnH2n+1 in alkyl group was identified from 1H-NMR spectrum of nuclear magnetic resonance spectroscopy. PTCDI films were deposited by thermal evaporation as the semiconductor layers of bottom-contact OTFTs. PTCDI-C8H17 was used to optimize the processing parameters of OTFTs. When the temperature of the substrate was held under 100 ℃ and the film thickness of PTCDI-C8H17 was 70 nm, the device had the best performance. Then, various PTCDI-CnH2n+1–based OTFTs were fabricated under the same parameters. The mobility and the grain size of OTFTs increase with increasing the number of carbon within alkyl group. Moreover, the same trend occurs in the devices in which the substrates were held under room temperature. From the x-ray diffraction analysis, the diffraction angle decreases with increasing an amount of carbon atoms. The oriented angles of PTCDI molecule and molecular length were obtained.

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