本論文主要研製30-與47-GHz之低相位雜訊及低功耗壓控振盪器，以及2.4-GHz低功耗多模態微波注入鎖定除頻器。30-與47-GHz變壓器回授壓控振盪器皆採用TSMC CMOS 90-nm GUTM製程設計實現，變壓器回授技巧可使振盪器的輸出擺幅提升，且當變壓器的匝數為耦合係數兩倍時，負載Q值可最佳化，因此振盪器可在低電壓及低功率消耗操作下，有不錯的相位雜訊及輸出功率，此外利用MIM電容與可變電容並聯，改善可變電容操作於毫米波Q值較差之問題，以提升整體共振腔Q值，達成較佳的相位雜訊。2.4-GHz低功耗多模態微波注入鎖定除頻器採用TSMC CMOS 0.18-um製程設計，使用電流再利用式的架構作為電路核心，因此能有效減少直流功率消耗，而透過交互耦合的注入技巧可增強振盪器之諧波特性表現，使除頻器完成除二、除三及除四之功能，另外具有單端注入方式及注入電晶體無功率消耗之優點。電路設計使用Agilent ADS進行模擬，走線效應則以三維全波有限元素法進行模擬。晶片採用fully on-wafer與on wafer circuit with PCB bias network的方式進行量測。

This thesis presents the design of millimeter-wave CMOS voltage controlled oscillators (VCOs) and low power multi-modulus microwave injection-locked frequency divider (ILFD), implemented by standard TSMC 0.18-um or TSMC 90-nm GUTM CMOS process. In the 30-GHz VCO design, the transformer-feedback technique is adopted to optimize loaded quality factor of VCO and improve the phase noise performance. In the 47-GHz VCO design, the transformor-feedback technique is adopted for better star-up condition and good loaded quality factor of VCO at high frequency design. In the multi-modulus ILFD, the current-reused cross-coupled pair structure is adopted for low power consumption. The injection-switched cross-coupled pair technique enables this divider to operate in divide-by-2, -3, and -4 modes and wide locking range. The simulated and measured results of the designed RFICs are compared and discussed in this thesis.

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