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研究生： 薛皓文
Hsueh, Hao-Wen
論文名稱： 精微銀合金導線之介金屬化合物成長及通電拉伸沿晶破壞動力學與機制探討
On the Kinetics and Mechanism of IMC Growth and Electrified Tensile Intergranular Fracture of Fine Silver Alloy Wires
指導教授： 呂傳盛
Lui, Truan-Sheng
洪飛義
Hung, Fei-Yi
學位類別： 博士
Doctor
系所名稱： 工學院 - 材料科學及工程學系
Department of Materials Science and Engineering
論文出版年： 2017
畢業學年度： 105
語文別： 中文
論文頁數： 112
中文關鍵詞： 沿晶破壞 、介金屬化合物 、打線接合 、電遷移
外文關鍵詞： Intergranular Fracture, IMCs, Wire Bonding, Electromigration
相關次數： 點閱：167  下載：9 
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    • 　　在現今微電子封裝中，主要以Ag基與Cu基導線作為打線接合的導線材料，然而針對Ag基導線的研究較少，因此本研究將以精細微米級Ag合金導線作為主要材料，探討其兩個主要的可靠度問題，一為介金屬化合物(Intermetallic compound, IMC)的成長特性，二為電流破壞行為。其中電流破壞行為又分為純電流的破壞行為與通電拉伸試驗(Dynamic current tensile test, DCT test)。
    　　針對Ag合金(Au = 8 wt%; Pd = 3 wt%)微細導線進行高溫儲存壽命試驗(0-1,000 hr)後，利用選區繞射鑑定Ag合金導線與Al膜間生成了Hexagonal的IMC。主要擴散路徑為Ag及Al的互相擴散，Ag合金線中Au及Pd的擴散到Al中的現象並不顯著，Pd亦具有阻擋Al繼續向上擴散的功能，但是Ag持續向下擴散，造成IMC上方出現Kirkendall voids。介金屬化合物層主要分為三層，分別是位於接合介面下層IMC的Ag2Al、接合介面上層IMC的(Ag, Au, Pd)2Al及最上層約200nm厚的細晶薄層，此薄層之是Pd-rich的相，能有效抑制Al向上擴散，使IMC無法繼續增加厚度。
    　　逐漸加大通入Ag-8Au-3Pd微細線材的電壓電流，研究過量電流對於線材的影響。電流產生的焦耳熱將促使晶粒逐漸成長至竹節狀晶粒，減少晶界數量並降低線材電阻。此外，亦發現在18-50 μm的線徑下，熔斷電流與線徑的關係也呈現線性關係。
    　　在通電過程中進行拉伸試驗稱為通電拉伸實驗。實驗中發現，大量電流的影響下會使得線材強度及延展性同時下降，其中以Ag基導線較為嚴重，主因為電遷移造成孔洞與裂縫同時產生，此時導入應變將使孔洞與裂縫持續成長，使晶界弱化進而發生沿晶破壞現象。
    　　在較慢的應變速率下，此破壞的現象會更加嚴重，且在負極的破壞現象比在正極來得高，在80%熔斷電流下，其延伸率將從19%降至僅剩2%。即使在較粗的線徑下，此現象亦無法消除。
    　　總而言之，與Cu基導線對比，Ag基導線更容易受到電流破壞，在Ag基導線應用比例逐漸上升的此時，需更加注意其電流與材料內部的變化，減少失效的可能性。

    The growth kinetics of intermetallic compound (IMC) of the Ag alloy wires and Al Pad was discussed, and the damage of excessive current density were investigated by electrified test and the dynamic current tensile (DCT) test.
    Observations on the Ag-8Au-3Pd wires after high temperature storage (HTS) test indicated that the main IMC between Ag alloy wires and Al Pads were Ag2Al (hexagonal), and the main diffused routes were Ag and Al diffusing into each other. Because a Pd-rich phase as a diffusing barrier of Al was existed in the 200 nm thin layer at the top of the IMC, and the Kirkendall voids appeared upper the IMC.
    The effects of excessive current density on the Ag-8Au-3Pd wires were investigated by electrified test. The grain boundary were reduced and the electrical resistance were decreased by joule’s heat, and the bamboo grains were formed gradually in current stressing.
    The DCT test were employed to measure the tensile properties during current stressing. Both the elongation and tensile strength of the wires decreased in the DCT test, particularly the Ag-based wires. The voids and cracks were generated by electromigration and were propagated by strain applied. Therefore, the weakened grain boundary was the main cause of intergranular fracture of the Ag-based wires.
    Overall, compared to the Cu-based wires, electromigration occurred more easily in the Ag-based wires; therefore, the relationship in electrical current and the change in materials should be noticed to avoid the failures happened.

    口試通過證明書 I 摘要 III Extended Abstract V 誌謝 XVIII 目錄 XX 表目錄 XXIV 圖目錄 XXV 第一章 緒論 1 1.1 研究動機 1 1.2 打線接合製程 2 1.2.1 接合技術分類 3 1.2.2 放電結球 4 1.2.3 接合強度 5 1.3 微細金屬導線材料 6 1.3.1 金導線 6 1.3.2 銅基導線 7 1.3.3 銀基導線 9 1.4 可靠度試驗 10 1.4.1 高溫度、濕度、壓力下的可靠度試驗 10 1.4.2 溫度循環的可靠度試驗 11 1.5 介金屬化合物 11 1.5.1 金線與鋁膜的介金屬化合物 12 1.5.2 銅線與鋁膜的介金屬化合物 12 1.5.3 介金屬化合物成長速率 12 1.5.4 介金屬化合物的影響 13 1.6 電流破壞效應 14 1.6.1 電遷移 15 1.6.2 熔斷電流 17 第二章 實驗步驟與方法 30 2.1 實驗概述 30 2.2 實驗材料 30 2.3 介金屬化合物分析 31 2.3.1 試片製備 31 2.3.2 IMC形貌觀察 31 2.3.3 TEM試片製備及元素分析 31 2.3.4 晶體結構分析 32 2.4 通電試驗 32 2.4.1 熔斷電流密度 32 2.4.2 顯微結構觀察 33 2.4.3 電阻率量測 33 2.5 通電拉伸試驗 34 2.5.1 儀器裝置 34 2.5.2 比對材料選擇 34 2.5.3 破斷面觀察 35 2.5.4 不同應變速率及不同線徑的通電拉伸觀察 35 第三章 實驗結果 41 3.1 銀金鈀線材與鋁基板介金屬化合物分析 41 3.1.1 橫截面觀察 41 3.1.2 相分析 42 3.2 通電對於不同線徑銀金鈀導線之影響 43 3.2.1 熔斷電流密度解析 43 3.2.2 通電前後電流-電壓曲線變化 44 3.2.3 通電前後微觀組織變化 45 3.3 不同材料之通電拉伸試驗 46 3.3.1 通電拉伸試驗 47 3.3.2 拉伸破斷面解析 48 3.3.3 銀金鈀線材橫截面 48 3.4 不同應變速度的通電拉伸試驗 49 3.4.1 應力-應變曲線 49 3.4.2 外觀解析 49 3.5 不同線徑下的通電拉伸試驗 50 3.5.1 應力-應變曲線 50 3.5.2 拉伸破斷面解析 51 3.5.3 破斷面微觀組織觀察 51 第四章 討論 88 4.1 介金屬化合物生成機制 88 4.2 電熱成長與純熱成長討論 89 4.3 沿晶破壞機制討論 89 4.4 通電拉伸的應用性 92 第五章 總結論 99 參考文獻 101

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