MnBi2Te4 是第一個內稟反磁性拓墣絕緣體，被廣泛視為實現許多奇異量子態的基石，且作為二維層狀材料，凡德瓦異質結構為其帶來豐富的可調性。雖然近年在理論預測和實驗證實上取得了非凡的成功，該材料仍然存在許多的爭議未解。另一方面，現今主流研究都專注在該材料的塊材上，使得該材料的薄膜基本性質一直沒有被完整的探索。在此，我們首次的使用了掃描穿隧顯微鏡和掃描穿隧能譜研究了 MnBi2Te4 薄膜的螺旋成長機制與本質的缺陷結構，這些缺陷包含：二維的分數層截面缺陷、一維的晶粒邊界、一維的螺旋錯位與零維的點缺陷。除此之外，我們更進一步地使用了氫蝕刻證實了表面重構的機制與推斷了該反應的中間過程。這些研究將為缺陷調控與薄膜本質的結構性缺陷提供了新的認知，希望能有助於目前極具爭議的開放問題。

MnBi2Te4, the first intrinsic antiferromagnetic topological insulator, is regarded as a promising building block for exotic quantum states and 2D nature features for its turnability in van der Waal heterostructure engineering. Despite recent significant advances in experimental realization and theoretical prediction, numerous discrepancies remain unresolved. On the other hand, the majority of research focuses on bulk materials, leaving the thin film counterpart unexplored. For the first time, the spiral growth mechanism and native defect structure of a thin film sample are characterized using a scanning tunneling microscope and scanning tunneling spectroscopy. These defects include two-dimensional fractional termination, one-dimensional grain boundary, one-dimensional screw dislocation, and zero-dimensional point defect. By utilizing hydrogen etching, we were able to confirm the mechanism of surface reconstruction and deduce the intermediate process. Our findings shed new light on defect engineering and intrinsic defect structure in thin film samples, with the hope of resolving the open issue.

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