本論文的初步研究是利用兩種不同的液態相方法，液相沉積法(Liquid Phase Deposition, LPD)以及溶膠凝膠法(Sol-Gel)去製備寬能隙材料(4.8~4.9 eV)氧化鎵(Ga2O3)，並將後者所製備出的氧化鎵(Ga2O3)奈米級薄膜應用於電阻式隨機存取記憶體(Resistive random-access memory, RRAM)做為電阻轉換層，和傳統真空製程相比溶膠凝膠法能使電阻轉換層薄膜有更高的氧空缺(oxygen vacancy concentration)濃度，期望有效提升其電阻式隨機存取記憶體的電阻轉換特性。
最簡單的電阻式記憶體結構為類似三明治層的金屬–絕緣層–金屬(MIM) 結構，本研究利用溶膠凝膠法所製備的氧化鎵作為電阻式記憶體的電阻轉換層，並使用濺鍍的方法製備上電極鋁，下電極則使用氧化銦錫(ITO)玻璃基板，形成記憶體結構Al/Ga2O3/ITO，經由量測後得到的特性為低阻態(Low Resistance State, LRS)和高阻態(High Resistance State, HRS)之電流開關比(on/off ratio)﹥103、記憶保持力(Retention time)﹥1×104 s，直流反覆讀寫能力(DC-Endurance) 100次、變異量的分析Cumulative current/voltage (CVLRS=0.25, CVHRS= 0.78, CVSET = 0.39, CVRESET = 0.16)、元件在低阻態時由歐姆機制所主導，而在高阻態時則是由SCLC機制所主導。

The research of this thesis is to prepare wide energy gap material (4.8~4.9 eV) gallium oxide (Ga2O3) by sol-gel method, and apply it to resistive random-access memory (RRAM) as the resistive switching layer, compared with the traditional vacuum process, the sol-gel method can make the resistive switching layer have higher oxygen vacancy concentration, which is expected to effectively improve the switching memory characteristic.
The simplest resistive random access memory structure is a metal-insulator-metal (MIM) structure similar to a sandwich. In this study, gallium oxide prepared by the sol-gel method was used as the resistive switching layer of the resistive memory, and sputtering was used to prepare the top electrode aluminum, the bottom electrode was using an indium tin oxide (ITO) glass substrate to form a memory structure Al/Ga2O3/ITO, the characteristics obtained after measurement are low resistance state (LRS) and high resistance state (HRS) current on/off ratio > 103, memory retention time > 1×104 s, DC-endurance 100 times, cumulative(coefficient of variation) current/voltage (CVLRS=0.25, CVHRS= 0.78, CVSET = 0.39, CVRESET = 0.16), the device is dominated by the ohmic mechanism in the low resistance state, and dominated by the SCLC mechanism in the high resistance state.

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