本論文使用友達公司所提供的LTPS TFT元件結構及製程參數，以ploysilicon作為通道材料，以此構造為基礎，論文中將透過Technology Computer-Aided Design (TCAD) 的Sentaurus Structure Editor 和Sentaurus Process建立出低溫多晶矽薄膜電晶體N型與P型模型，用Sentaurus Device探討低溫多晶矽薄膜電晶體元件特性及模擬其元件的電流對電壓(I-V)和電容對電壓(C-V)曲線，再使用HSPICE LEVEL 62 RPI內建模型來模擬數位電路；模擬出元件I-V C-V 曲線的結果，由MATLAB建立對應的HSPICE LEVEL 62模型及最小方均根誤差(Minimum Mean Square Error)計算方法求得HSPICE模擬所需的參數完成數位電路的模擬。
數位電路特性分析由上述的HSPICE LEVEL 62 TFT N型與P型參數，模擬出由電晶體組成的電路如反相器、NAND閘、環型震盪器、延遲正反器、移暫存器及電位轉換器等，模擬環境以操作電壓為5伏特，操作頻率為500 KHz及1MHz 探討電路的傳輸延遲時間和平均功耗的模擬結果。

In this thesis, a Technology Computer-Aided Design (TCAD) model of the low temperature polysilicon thin film transistor (LTPS TFT) is calibrated to experimental data using physical and process parameters. The device structure adopts ploysilicon as the channel material. Based on their structure, this work designs LTPS N and P-type TFT devices through the Technology Computer-Aided Design (TCAD) Sentaurus Structure Editor tool and Sentaurus Process tool. It also uses Sentaurus Device to investigate the characteristics of the devices and simulate the current-to-voltage (I-V) curves and capacitance-to-voltage (C-V) characteristics. For model calibration, MATLAB code is developed to build the HSPICE LEVEL 62 model (including drain current and capacitances). Using the minimum mean square error (Minimum Mean Square Error) estimation method, the MATLAB code can generate the model parameters which are required for HSPICE simulation to complete the digital circuit analysis.
Next, the LTPS TFT device characteristics are analyzed by implementing digital circuits. These digital circuits are composed of transistors such as Inverters, NAND gates, Ring Oscillators, Delay Flip-Flops, Shift Registers Level Shift circuit, etc., for simulation with the operating voltage at 5 volts and operation frequency at 500 K Hz and 1 M Hz. Finally, we can get the propagation delay time and average power consumption of the digital circuits to evaluate our TFT device performances.

[1] Ana Paula Pinto CorreiaPedro Miguel Cândido BarquinhaJoão Carlos da Palma Goes,A Second-Order ΣΔ ADC Using Sputtered IGZO TFTs - Thin-Film Transistors,Springer,pp5-8
[2] 汪芳興 ,Principle and Driving Circuit Design of LTPS-TFT-LCD ,2009
[3] B. J. Lechner, F. Marlowe, E. Nester, and J. Tults, "Liquid crystal matrix displays," Proceedings of the IEEE, vol. 59, no. 11, pp. 1566-1579, 1971.
[4] T. Scheffer and J. Nehring, "Supertwisted nematic (STN) liquid crystal displays," Annual review of materials science, vol. 27, no. 1, pp. 555-583, 1997.
[5] Sentaurus™ Guide Version L-2016.03, March 2016
[6] HSPICE User Guide: Simulation and Analysis Version E-2010.12, December 2010
[7] J. Electro chem. SPICE Models for Amorphous Silicon and Polysilicon Thin Film Transistors Soc., Vol. 144, No. 8, August 1997
[8] HSPICE Reference Manual: MOSFET Models Version H-2013.03, March 2013 pp212-224
[9] Szu-Han Chen, Prof. Ming-Dou Ker, Design and Realization of Pixel Memory Circuit andTwo-Direction Cyclic D/A Converter in LTPS Technology,National Chiao-Tung University,August 2011
[10] Neil Weste, David Harris,CMOS VLSI Design: A Circuits and Systems Perspective 4/e,Pearson , pp.91-92 ,2010
[11] Sung-Mo Kang, Yusuf Leblebici, Chul-Woo Kim,Ultra Low Voltage I-V RFID Tag Implement in aIGZO TFT Technology on Plastic, 2017 IEEE International Conference on RFID