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研究生：	陳冠宇 Chen, Kuan-Yu
論文名稱：	量子位障厚度對氮化鎵系列發光二極體影響之研究 Investigation of effects of quantum barrier thickness on GaN-based light-emitting diodes
指導教授：	張守進 Chang, Shoou-Jinn 陳志方 Chen, Jone-Fang
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 微電子工程研究所 Institute of Microelectronics
論文出版年：	2012
畢業學年度：	100
語文別：	英文
論文頁數：	63
中文關鍵詞：	發光二極體、氮化鎵、位障
外文關鍵詞：	LED, GaN, barrier
相關次數：	點閱：124 下載：5
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我們成功研製了不同條件的氮化鎵發光二極體。在本論文中，成長10對的氮化銦鎵/氮化鎵多重量子井時，我們保持量子井的厚度為3奈米，改變量子位障的厚度(分別為12奈米, 9奈米, 6奈米)。位障較厚的發光二極體有較大的順向偏壓和串聯電阻，這是因為載子的傳輸是受到能障厚度和能障高度所影響，能障越厚和能障越高都不利於載子的傳輸，我們發現位障較厚的發光二極體有能帶傾斜較嚴重的量子井、能障較高的位障以及能障較厚的位障。
此外，我們以電致發光來進行光特性的研究，發光起始波長和遮蔽現象導致的藍移是和量子侷限史塔克效應有高度相關的，LED I(位障厚度為12 奈米)、LED II(位障厚度為9奈米)、LED III(位障厚度為6奈米)的遮蔽現象導致的藍移分別是0.70奈米、0.29奈米、0.10奈米，從光輸出功率轉換而得的外部量子效率我們分成外部量子效率的峰值和效率下滑兩個部分進行討論。最後，我們計算了發光二極體的介面溫度，位障較厚的發光二極體有較高的介面溫度，這個結果主要是由插座轉換效率所主導，另一方面，串聯電阻也會貢獻一部分的焦耳熱到發光二極體的介面。

GaN-based light emitting diodes have been fabricated and investigated. In this study, the 10 periods of InGaN/GaN MQWs are grown by varying the thickness of the GaN barriers (12 nm, 9 nm, 6 nm), keeping the thickness of the In0.23Ga0.77N wells constant at 3 nm. The LED with thicker barriers is found to have higher forward voltage and series resistance. It is attributed to that the carrier transport depends on barrier thickness and barrier height. Thick barrier thickness and high barrier height are hard for carriers to transport. It is found that LED with thicker barrier thickness has severer band bending in wells, higher barrier height in barriers, and thicker barrier thickness in barriers.
In addition, the optical characteristics are investigated by electroluminescence (EL). The initial emission wavelength and blueshift of emission wavelength caused by screening effect is related to the quantum-confined Stark effect (QCSE). The blueshift of screening effect of LED I (barrier = 12 nm), LED II (barrier = 9 nm) and LED III (barrier = 6 nm) are 0.70 nm, 0.29 nm and 0.10 nm, respectively. External quantum efficiency (EQE), converted from light output power, is discussed by two parts, which are EQE peak and efficiency droop. Lastly, the junction temperatures of the LEDs are calculated. The LED with thicker barriers has higher junction temperature. The wall plug efficiency (WPE) dominates the junction temperature, and series resistance also contributes some Joule heat to the junction.

摘要	I
Abstract	III
誌謝	V
Contents	VI
Table Captions	VIII
Figure Captions	IX
Chapter 1.	Introduction	1
1.1 Background	1
1.2 Motivation	3
1.3 Organization of the thesis	4
References	5
Chapter 2.	Experiments and theories	7
2.1 Process equipments and measurement instrument	7
2.1.1Metal organic chemical vapor deposition (MOCVD)	7
2.1.2 Inductively coupled plasma (ICP)	8
2.1.3 Electroluminescence (EL)	9
2.2 Polarization	10
2.2.1 Properties of wurtzite GaN	10
2.2.2 Spontaneous and piezoelectric polarization	11
2.2.3 Investigations of polarization effect on GaN LEDs	12
2.3 LED basic device parameters	15
2.3.1 Equivalent circuit model of LED	15
2.3.2 Quantum efficiency	16
2.3.3 Junction temperature	17
2.4 Device fabrication and experiments design	20
References	28
Chapter 3.	The electrical and optical characteristics of GaN LEDs	32
3.1 Forward I-V characteristics	32
3.2 Electroluminescence	34
3.3 Blueshift caused by screening Effect	35
3.3.1 Current for screening effect	35
3.3.2 Blueshift caused by screening effect	36
3.4 Photoelectric conversion efficiency	36
3.4.1 Light output power	36
3.4.2 External quantum efficiency peak	37
3.4.3 Efficiency droop	39
References	48
Chapter 4.	The Temperature-related characteristics of GaN LEDs	50
4.1 Introduction	50
4.2 The thermal effect on optical characteristics	51
4.2.1 Wavelength and temperature	51
4.2.2 Power and temperature	51
4.3 Junction temperature	52
References	59
Chapter 5.	Conclusions and future works	60
5.1 Conclusions	60
5.2 Future works	62
References	63


                                    

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Chapter 2
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Chapter 3
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Chapter 4
[1] Y. J. Lee, C. J. Lee, C. H. Chen, “Determination of Junction Temperature in InGaN and AlGaInP Light-Emitting Diodes”, IEEE J. Quantum Electron., 46, 10 (2010)
[2] Y. H. Cho, G. H. Gainer, A. J. Fischer, and J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, “”S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells”, Appl. Phys. Lett., 73, 1370 (1998)

Chapter 5
[1] C. H. Wang, S P. Chang, W. T. Chang, J. C Li, Y S. Lu, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells”, Appl. Phys. Lett., 97, 181101 (2010)
[2] M. C. Tsai, S. H. Yen, and Y. K. Kuo, “Deep-ultraviolet light-emitting diodes with gradually increased barrier thicknesses from n-layers to p-layers”, Appl. Phys. Lett., 98, 111114 (2011)
[3] L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-Doping on the Characteristics of InGaN–GaN Multiple Quantum-Well Blue Light Emitting Diodes”, IEEE J. Quantum Electron., 38, 5 (2002)
[4] A. Di Carlo, F. Della Sala, P. Lugil, V. Fiorentini, and F. Bernardini, “Doping screening of polarization ﬁelds in nitride heterostructures,” Appl. Phys. Lett., 76, 26 (2000)

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