透明導電薄膜是一種吸收紫外光、穿透可見光與反射紅外線的材料，傳統上多使用氧化銦錫（ITO），然而，其製備成本仍高。所以有新的鍍膜材料或技術在發展，以取代氧化銦錫薄膜，如：ZnO:Al（AZO）。本研究利用金屬蒸氣真空弧（MeVVA）技術佈植氣化的鋁離子，使其改質氧化鋅（ZnO）成薄膜。藉由不同的鋁離子植入劑量與控制機台參數，進而改變ZnO薄膜的導電特性與透光度。實驗中使用一般鈉玻璃作為基板，並利用射頻磁控濺鍍（RF-MSD）系統沉積ZnO薄膜與對照組ZnO:Al（2%）薄膜，然後以MeVVA來改質ZnO薄膜。此技術可將前進的鋁離子穿透進入ZnO薄膜至深度數百奈米的表層。比較RF磁控濺鍍與MeVVA離子佈植兩種技術，其中，薄膜厚度、沉積速率、透光率、電性與佈植形貌對ZnO薄膜的特性有顯著的影響。藉由前述的參數選擇最佳調整來改質ZnO薄膜，並以ZnO:Al薄膜作為對照組。研究結果顯示：在基板不加熱以及厚度為261 nm的條件下，沉積出的ZnO薄膜電阻值高，但經由MeVVA離子佈植，在劑量為1.4×1016 ions/cm2時，可以改善ZnO薄膜之電阻值從3.02×107 Ω下降至3.03×104 Ω；並保有高透光率（91.5%，波長為550 nm），極具應用與發展之潛力。

　Transparent conductive thin film is capable to absorb ultraviolet, transmit visible light and reflect infrared. Usually Tin-doped indium oxide (ITO) is primarily used, whereas the cost for the preparation the thin-film ITO is still too high. Novel coating materials or techniques are developing to replace the thin-film ITO such as Al-doped ZnO (AZO). In this study, we utilize metal vapor vacuum arc (MeVVA) technique that forward the vaporized aluminum ions implanted into zinc oxide (ZnO) as a thin solid film. By applying different ion-implanted doses and manipulating the operational parameters, the conductivity and optical property of the ZnO thin film can be improved. In the experiment, a glass substrate was used as the base, then a thin-film ZnO or ZnO:Al (2%, as a reference) was coated using RF reactive magnetron sputtering deposition (RF-MSD) system. The thin-film ZnO was then treated by MEVVA, with which the forward aluminum ions can penetrate the thin-film ZnO into a diffused layer of several hundreds nanometers depth. The film thickness, deposition rate, transparency, conductivity and surface morphology of the treated ZnO surface were significantly influenced by the employment of RF-MSD or MeVVA treatment. From the above-mentioned parameters, an optimized adjustment was chosen, while the RF-MSD-treated ZnO:Al (2%) film was referenced. Experimental result demonstrated that under the condition of non-thermal effect and the deposited ZnO coating of 261 nm, the conductivity of ZnO thin film was originally poor (3.02×107Ω). However after the vaporized aluminum ions implantation, the resistance of the ion-implanted ZnO decreased from 3.02×107 to 3.03×104 Ω. At the same time the transparency of the aluminum ions-implanted ZnO was mostly preserved (91.5% at the wavelength of 550 nm). Potentially it provides a method with highly promising applications.

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